Light source with quantum dots
The invention provides a luminescent nano particles based luminescent material comprising a matrix of interconnected coated luminescent nano particles, wherein for instance wherein the luminescent nano particles comprise CdSe, wherein the luminescent nano particles comprise a coating of CdS and wherein the matrix comprises a coating comprising ZnS. The luminescent material according may have a quantum efficiency of at least 80% at 25° C., and having a quench of quantum efficiency of at maximum 20% at 100° C. compared to the quantum efficiency at 25° C.
1. A luminescent material comprising:
luminescent nanoparticles;
a first coating material coating the luminescent nanoparticles; and
a second coating material coating the first coating material;
wherein the luminescent nanoparticles, the first coating material, and the second coating material are different materials.
2. The luminescent material of claim 1 wherein the luminescent nanoparticles are interconnected in a matrix.
3. The luminescent material of claim 2 wherein the matrix is formed by the first coating material, which connects neighboring luminescent nanoparticles.
4. The luminescent material of claim 2 wherein the matrix is formed by the second coating material, which connects neighboring luminescent nanoparticles.
5. The luminescent material of claim 2 wherein neighboring luminescent nanoparticles in the matrix are spaced between 5 nm and 200 nm apart.
6. The luminescent material of claim 2 wherein the matrix comprises a spherical-joint structure, wherein the spheres comprise the luminescent nanoparticles.
7. The luminescent material of claim 1 wherein the luminescent nanoparticles are CdSe, the first coating material is CdS, and the second coating material is ZnS.
8. The luminescent material of claim 1 wherein the second coating has a thickness between 1 nm and 50 nm.
9. The luminescent material of claim 1 wherein
the luminescent nanoparticles are selected from the group consisting of InP, CuInS 2 , CuInSe 2 , CdTe, CdSeTe, AgInS 2 , AgInSe 2 , and ZnSe:Mn;
the first coating material is selected from the group consisting of Cu x Zn y In z S (x+2y+3z)/2 , Cu x Zn y In z Se (x+2y+3z)/2 , and ZnSeTe; and
the second coating material is selected from the group consisting of SiO 2 , MgS, ZnSe, ZnO, TiO 2 , Zn 1−x Mg x S y Se 1−y , and ZnSO x .
10. A device comprising:
a light source; and
a luminescent material disposed in a path of light emitted by the light source, the luminescent material comprising:
luminescent nanoparticles;
a first coating material coating the luminescent nanoparticles; and
a second coating material coating the first coating material;
wherein the luminescent nanoparticles, the first coating material, and the second coating material are different materials.
11. The device of claim 10 wherein the luminescent nanoparticles are interconnected in a matrix.
12. The device of claim 11 wherein the matrix is formed by the first coating material, which connects neighboring luminescent nanoparticles.
13. The device of claim 11 wherein the matrix is formed by the second coating material, which connects neighboring luminescent nanoparticles.
14. The device of claim 11 wherein neighboring luminescent nanoparticles in the matrix are spaced between 5 nm and 200 nm apart.
15. The device of claim 11 wherein the matrix comprises a spherical-joint structure, wherein the spheres comprise the luminescent nanoparticles.
16. The device of claim 10 wherein the luminescent nanoparticles are CdSe, the first coating material is CdS, and the second coating material is ZnS.
17. The device of claim 10 wherein the luminescent material is embedded in a resin and disposed in direct contact with the light source.
18. The device of claim 10 wherein the light source is disposed in a chamber and the luminescent material is disposed on an exit window of the chamber.
19. The device of claim 10 wherein the first coating material forms rods around dot shaped luminescent nanoparticles.
20. The device of claim 10 wherein:
the luminescent nanoparticles are selected from the group consisting of InP, CuInS 2 , CuInSe 2 , CdTe, CdSeTe, AgInS 2 , AgInSe 2 , and ZnSe:Mn;
the first coating material is selected from the group consisting of Cu x Zn y In z S (x+2y+3z)/2 , Cu x Zn y In z Se (x+2y+3z)/2 , and ZnSeTe; and
the second coating material is selected from the group consisting of SiO 2 , MgS, ZnSe, ZnO, TiO 2 , Zn 1−x Mg x S y Se 1−y , and ZnSO x .