Conversion of high-energy photons into electricity
Systems and methods for the conversion of energy of high-energy photons into electricity which utilize a series of materials with differing atomic charges to take advantage of the emission of a large multiplicity of electrons by a single high-energy photon via a cascade of Auger electron emissions. In one embodiment, a high-energy photon converter preferably includes a linearly layered nanometric-scaled wafer made up of layers of a first material sandwiched between layers of a second material having an atomic charge number differing from the atomic charge number of the first material. In other embodiments, the nanometric-scaled layers are configured in a tubular or shell-like configuration and/or include layers of a third insulator material.
1. A detector for detecting high energy photon emissions, comprising
a plurality of layers of a first material that absorbs high energy photons and emits electrons ejected from an atom in an individual layer of the plurality of layers of the first material by a high energy photon absorbed in the individual layer of the plurality of layers of the first material, each layer of the plurality of layers of the first material having a thickness measured along the direction of the emitted electrons that is less than the length of the mean free path of the emitted electrons in the first material, wherein the thickness of each layer of the plurality of layers of the first material measured along the direction of propagation of a high energy photon is less than the length of a mean free path of the high energy photon in the first material, wherein the wavelengths of the high energy photons are in the non-visible regime, and wherein a plurality of layers of the plurality of layers of a first material encountered by a high energy photon along the direction of propagation of the high energy photon having an aggregate thickness measured along the direction of propagation of a the high energy photon that is greater than the length of a mean free path for the high energy photon in the first material, and
a plurality of layers of a second material that collects electrons emitted from the plurality of layers of the first material and electrically coupled to the plurality of layers of the first material, each layer of the plurality of layers of the second material having a thickness greater than the length of the mean free path in the second material of the electrons emitted from the plurality of layers of the first material, wherein one or more layers of the plurality of layers of the second material interposing adjacent layers of the plurality of layers of the first material, wherein the direction of propagation of the high energy photons is substantially orthogonal to a normal vector to a boundary surface between adjacent layers of the plurality of layers of the first and second material, and wherein the electrons emitted from the first material are emitted in a direction perpendicular to the direction of propagation of the high energy photons.
2. The detector of claim 1 further comprising a plurality of layers of a third material, each layer of the plurality of layers of the third material interposing adjacent layers of the one or more layers of the plurality of layers of the second material.
3. The detector of claim 1 wherein adjacent layers of the plurality of layers of the first and second material are stacked face-to-face.
4. The detector of claim 1 wherein each layer of the plurality of layers of the first material is configured as a cylindrical core and each layer of the plurality of layers of the second material is configured as a cylindrical shell concentrically disposed about the cylindrical core of the first material, wherein the radius of the cylindrical core is less than ½ the length of the mean free path of the emitted electrons in the first material.
5. The detector of claim 4 further comprising a plurality of layers of a third insulating material configured as a cylindrical shell concentrically disposed about the cylindrical shell of the second material.
6. The detector of claim 1 wherein the first material comprises a high atomic charge number component.
7. The detector of claim 6 wherein the high atomic charge number component is a refractory metal or metal oxide.
8. The detector of claim 6 wherein the high atomic charge number component is tungsten.
9. The detector of claim 1 wherein the atomic charge number of the second material differs from the atomic charge number of the first material.
10. The detector of claim 1 wherein the atomic charge number of the second material is lower than the atomic charge number of the first material.
11. The detector of claim 1 wherein the second material is a metal.
12. The detector of claim 11 wherein the metal is aluminum.
13. The detector of claim 1 wherein each of layers of the plurality of layers of the first material is sandwiched between two layers of the plurality of layers of the second material.
14. The detector of claim 1 wherein the high energy photons absorbable by the first material have energies in the range of about 100 eV or greater.
15. The detector of claim 1 wherein the high energy photons absorbable by the first layer of material include X, XUV or gamma rays.
16. The detector of claim 1 wherein the plurality of layers of the first and second material are coupled to a circuit having a load.
17. The detector of claim 16 wherein the load is an electrically drivable component.
18. A detector for detecting high energy photon emissions, comprising
a plurality of layers of a first material that absorbs high energy photons and emits electrons ejected from an atom in an individual layer of the plurality of layers of the first material by a high energy photon absorbed in the individual layer of the plurality of layers of the first material, each layer of the plurality of layers of the first material having a thickness measured along the direction of the emitted electrons that is less than the length of the mean free path of the emitted electrons in the first material, wherein the thickness of each layer of the plurality of layers of the first material measured along the direction of propagation of a high energy photon is less than the length of a mean free path of the high energy photon in the first material, wherein the wavelengths of the high energy photons are in the non-visible regime, and wherein a plurality of layers of the plurality of layers of a first material encountered by a high energy photon along the direction of propagation of the high energy photon having an aggregate thickness measured along the direction of propagation of a the high energy photon that is greater than the length of a mean free path for the high energy photon in the first material,
a plurality of layers of a second material that collects electrons emitted from the plurality of layers of the first material and electrically coupled to the plurality of layers of the first material, each layer of the plurality of layers of the second material having a thickness greater than the length of the mean free path in the second material of the electrons emitted from the plurality of layers of the first material, wherein one or more layers of the plurality of layers of the second material interposing adjacent layers of the plurality of layers of the first material, wherein the direction of propagation of the high energy photons is substantially orthogonal to a normal vector to a boundary surface between adjacent layers of the plurality of layers of the first and second material, and wherein the electrons emitted from the first material are emitted in a direction perpendicular to the direction of propagation of the high energy photons, and
a plurality of layers of a third material, each layer of the plurality of layers of the third material interposing adjacent layers of the one or more layers of the plurality of layers of the second material wherein the third material is SiO2.