Dies-on-package devices and methods therefor
Dies-on-package devices and methods therefor are disclosed. In a dies-on-package device, a first IC die is surface mount coupled to an upper surface of a package substrate. Conductive lines are coupled to the upper surface of the package substrate in a fan-out region with respect to the first IC die. A molding layer is formed over the upper surface of the package substrate, around sidewall surfaces of the first IC die, and around bases and shafts of the conductive lines. A plurality of second IC dies is located at a same level above an upper surface of the molding layer respectively surface mount coupled to sets of upper portions of the conductive lines. The plurality of second IC dies are respectively coupled to the sets of the conductive lines in middle third portions respectively of the plurality of second IC dies for corresponding fan-in regions thereof.
1. A dies-on-package device, comprising:
a package substrate having a laminate substrate having at least two layers;
the package substrate having a fan-out wafer-level redistribution layer on an upper surface thereof;
a first integrated circuit die surface mount coupled to an upper surface of the fan-out wafer-level redistribution layer;
conductive lines coupled to the upper surface of the fan-out wafer-level redistribution layer in a fan-out region with respect to the first integrated circuit die, the first conductive lines extending away from the upper surface of the fan-out wafer-level redistribution layer;
a molding layer formed over the upper surface of the fan-out wafer-level redistribution layer, around sidewall surfaces of the first integrated circuit die, and around bases and shafts of the conductive lines with outer edges of the molding layer, the fan-out wafer-level redistribution layer and the package substrate being co-terminus;
a plurality of second integrated circuit dies located at a same level above an upper surface of the molding layer respectively surface mount coupled to sets of upper portions of the conductive lines; and
the plurality of second integrated circuit dies respectively coupled to the sets of the conductive lines in middle third portions respectively of the plurality of second integrated circuit dies for corresponding fan-in regions thereof.
2. The dies-on-package device according to claim 1 , wherein the conductive lines are wire bond wires.
3. The dies-on-package device according to claim 1 , wherein:
the first integrated circuit die is a controller die; and
each of the wafer-level packaged microelectronic components comprises a respective memory die.
4. The dies-on-package device according to claim 1 , wherein the conductive lines are conductive pillars.
5. The dies-on-package device according to claim 1 , wherein the conductive lines are conductive vias.
6. The dies-on-package device according to claim 1 , wherein:
the plurality of second integrated circuit dies are laid out to form a quadrangle-like shape defining an area in a center thereof;
contacts of the plurality of second integrated circuit dies located in the middle third region are in rows; and
the rows of nearest neighbors of the plurality of second integrated circuit dies are orthogonal to one another.
7. The dies-on-package device according to claim 1 , wherein:
the plurality of second integrated circuit dies are laid out to form a quadrilateral-like shape;
contacts of the plurality of second integrated circuit dies located in the middle third region are in rows;
the rows of a first two of the plurality of second integrated circuit dies are parallel with one another to form first extended rows;
the rows of a second two of the plurality of second integrated circuit dies are parallel with one another to form second extended rows; and
the first extended rows and the second extended rows are opposite and parallel with one another.
8. The dies-on-package device according to claim 1 , wherein surface area portions of each of the plurality of second integrated circuit dies overlap the first integrated circuit die.
9. The dies-on-package device according to claim 1 , wherein the plurality of second integrated circuit dies is a first plurality of second integrated circuit dies, wherein the sets of upper portions of the conductive lines are first sets of upper portions of the conductive lines, the dies-on-package device further comprising:
a second plurality of second integrated circuit dies located at a same level above upper surfaces of the first plurality of integrated circuit dies respectively surface mount coupled to second sets of upper portions of the conductive lines; and
the second plurality of second integrated circuit dies respectively coupled to the second sets of the conductive lines in middle third portions respectively of the second plurality of second integrated circuit dies for corresponding fan-in regions thereof.
10. The dies-on-package device according to claim 9 , wherein the conductive lines are wire bond wires.
11. The dies-on-package device according to claim 9 , wherein surface area portions of each of the first plurality of second integrated circuit dies and the second plurality of second integrated circuit dies overlap the first integrated circuit die.
12. The dies-on-package device according to claim 9 , wherein surface area portions of each of the second plurality of second integrated circuit dies overlap the first integrated circuit die and the first plurality of second integrated circuit dies.
13. A method for forming a dies-on-package device, comprising:
obtaining a package substrate having a laminate substrate having at least two layers;
forming a fan-out wafer-level redistribution layer on an upper surface of the package substrate;
first surface mount interconnecting a first integrated circuit die to an upper surface of the fan-out wafer-level redistribution layer;
coupling conductive lines to the upper surface of the fan-out wafer-level redistribution layer in a fan-out region, the conductive lines extending away from the upper surface of the fan-out wafer-level redistribution layer;
forming a molding layer over the upper surface of the fan-out wafer-level redistribution layer, around sidewall surfaces of the first integrated circuit die, and around bases and shafts of the conductive lines with outer edges of the molding layer, the fan-out wafer-level redistribution layer and the package substrate being co-terminus; and
second surface mount interconnecting a plurality of second integrated circuit dies above an upper surface of the first molding layer, the second surface mount interconnecting including coupling sets of upper portions of the conductive lines respectively to the plurality of second integrated circuit dies for corresponding fan-in regions thereof.
14. The method according to claim 13 , wherein surface area portions of each of the plurality of second integrated circuit dies overlap the first integrated circuit die.
15. The method according to claim 13 , wherein the plurality of second integrated circuit dies is a first plurality of second integrated circuit dies, wherein the sets of upper portions of the conductive lines are first sets of upper portions of the conductive lines, the method further comprising:
third surface mount interconnecting a second plurality of second integrated circuit dies located at a same level above upper surfaces of the first plurality of integrated circuit dies to second sets of upper portions of the conductive lines; and
the second plurality of second integrated circuit dies respectively coupled to the second sets of the conductive lines in middle third portions respectively of the second plurality of second integrated circuit dies for corresponding fan-in regions thereof.
16. The method according to claim 15 , wherein surface area portions of each of the second plurality of second integrated circuit dies overlap the first integrated circuit die and the first plurality of second integrated circuit dies.