Package-on-package devices with same level WLP components and methods therefor
Package-on-package (“PoP”) devices with same level wafer-level packaged (“WLP”) components and methods therefor are disclosed. In a PoP device, a first integrated circuit die is surface mount coupled to an upper surface of a package substrate. Conductive lines are coupled to the upper surface of the package substrate in a fan-out region. The first conductive lines extend away from the upper surface of the package substrate. A molding layer is formed over the upper surface of the package substrate, around sidewall surfaces of the first integrated circuit die, and around bases and shafts of the conductive lines. WLP microelectronic components are located at a same level above an upper surface of the molding layer respectively surface mount coupled to sets of upper portions of the conductive lines.
1. A package-on-package device, comprising:
a package substrate;
a first integrated circuit die surface mount coupled to an upper surface of the package substrate;
conductive lines coupled to the upper surface of the package substrate in a fan-out region, the first conductive lines extending away from the upper surface of the package substrate;
a molding layer formed over the upper surface of the package substrate, around sidewall surfaces of the first integrated circuit die, and around bases and shafts of the conductive lines; and
wafer-level packaged microelectronic components located at a same level above an upper surface of the molding layer respectively surface mount coupled to sets of upper portions of the conductive lines;
wherein each of the wafer-level packaged microelectronic components respectively comprises:
a second integrated circuit die having first contacts in an inner third region of a front side surface of the second integrated circuit die;
a redistribution layer having second contacts in an inner third region of a first outer surface of the redistribution layer and third contacts in an outer third region of a second outer surface of the redistribution layer opposite the first outer surface, the second and the third contacts interconnected to one another;
the second contacts of the redistribution layer coupled to the first contacts of the second integrated circuit die with the front side surface of the second integrated circuit die face-to-face with the first outer surface of the redistribution layer; and
the third contacts offset from the first contacts and the second contacts for being in the fan-out region associated at least with the outer third region of the second outer surface of the redistribution layer.
2. The package-on-package device according to claim 1 , wherein the conductive lines are wire bond wires.
3. The package-on-package device according to claim 1 , wherein the package substrate is a laminate substrate having at least two layers.
4. The package-on-package device according to claim 1 , wherein the package substrate includes a fan-out wafer-level redistribution layer.
5. The package-on-package device according to claim 4 , wherein:
the first integrated circuit die is a controller die; and
each of the wafer-level packaged microelectronic components comprises a respective memory die.
6. The package-on-package device according to claim 1 , wherein the conductive lines are conductive pillars.
7. The package-on-package device according to claim 1 , wherein the conductive lines are conductive vias.
8. The package-on-package device according to claim 1 , wherein the third contacts are flip-chip contacts.
9. The package-on-package device according to claim 8 , wherein:
the wafer-level packaged microelectronic components are laid out to form a quadrangle-like shape defining an area in a center thereof;
the third contacts are in rows;
the rows of nearest neighbors of the wafer-level packaged components are orthogonal to one another; and
the rows are located proximate to an outer perimeter of the package substrate.
10. The package-on-package device according to claim 1 , wherein:
the wafer-level packaged microelectronic components are laid out to form a quadrilateral-like shape;
the third contacts are in rows;
the rows of a first two of the wafer-level packaged components are parallel with one another to form first extended rows;
the rows of a second two of the wafer-level packaged components are parallel with one another to form second extended rows; and
the first extended rows and the second extended rows are opposite one another and are located proximate to an outer perimeter of the package substrate.
11. The package-on-package device according to claim 1 , wherein surface area portions of each of the wafer-level packaged microelectronic components overlap the first integrated circuit die.
12. A package-on-package device, comprising:
a package substrate;
a first integrated circuit die surface mount coupled to an upper surface of the package substrate;
conductive lines coupled to the upper surface of the package substrate in a fan-out region, the first conductive lines extending away from the upper surface of the package substrate;
a molding layer formed over the upper surface of the package substrate, around sidewall surfaces of the first integrated circuit die, and around bases and shafts of the conductive lines; and
wafer-level packaged microelectronic components located at a same level above an upper surface of the molding layer respectively surface mount coupled to sets of upper portions of the conductive lines;
wherein each of the wafer-level packaged microelectronic components respectively comprises:
a second integrated circuit die having contacts in an inner third region of a front side surface of the second integrated circuit die;
the wafer-level packaged microelectronic components are laid out to form a quadrilateral-like shape;
first rows of the contacts of a first two of the wafer-level packaged components are parallel with one another to form first extended rows;
second rows of the contacts of a second two of the wafer-level packaged components are parallel with one another to form second extended rows; and
the first extended rows and the second extended rows are opposite and parallel with one another.
13. The package-on-package device according to claim 12 , wherein the conductive lines are wire bond wires.
14. The package-on-package device according to claim 12 , wherein the package substrate is a laminate substrate having at least two layers.
15. The package-on-package device according to claim 12 , wherein the package substrate includes a fan-out wafer-level redistribution layer.
16. A package-on-package device, comprising:
a package substrate;
a first integrated circuit die surface mount coupled to an upper surface of the package substrate;
conductive lines coupled to the upper surface of the package substrate in a fan-out region, the first conductive lines extending away from the upper surface of the package substrate;
a molding layer formed over the upper surface of the package substrate, around sidewall surfaces of the first integrated circuit die, and around bases and shafts of the conductive lines; and
wafer-level packaged microelectronic components located at a same level above an upper surface of the molding layer respectively surface mount coupled to sets of upper portions of the conductive lines;
wherein each of the wafer-level packaged microelectronic components respectively comprises:
a second integrated circuit die having contacts in an inner third region of a front side surface of the second integrated circuit die;
the wafer-level packaged microelectronic components are laid out to form a cross-like shape;
first rows of the contacts of a first two of the wafer-level packaged components are parallel with and opposite one another; and
second rows of the contacts of a second two of the wafer-level packaged components are parallel with and opposite one another and orthogonal to the first rows.
17. The package-on-package device according to claim 16 , wherein the conductive lines are wire bond wires.
18. The package-on-package device according to claim 16 , wherein the package substrate is a laminate substrate having at least two layers.
19. The package-on-package device according to claim 16 , wherein the package substrate includes a fan-out wafer-level redistribution layer.