Solid-state imaging device having improved light-collection, method of manufacturing the same, and electronic apparatus
A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.
1. An imaging device, comprising:
a substrate having a first side as a light-incident side and a second side opposite the first side;
a trench including a first trench and a second trench disposed adjacent to the first trench in a cross-section view;
a metallic oxide film disposed over at least a portion of the first side of the substrate, wherein the metallic oxide film extends continuously from the first trench to the second trench along the first side of the substrate in the cross-section view,
a first light-shielding film including a first portion disposed in the first trench and a second portion disposed in the second trench in the cross-section view;
a plurality of photoelectric conversion sections including a first photoelectric conversion section disposed between the first trench and the second trench in the cross-section view;
a silicon oxide film disposed above the first side of the substrate;
a hafnium oxide film disposed on the silicon oxide film;
a second light-shielding film disposed above the hafnium oxide film; and
a titanium nitride layer disposed between the hafnium oxide film and the second light-shielding film in the cross-section view,
wherein,
the metallic oxide film includes a first portion disposed in the first trench and a second portion disposed in the second trench in the cross-section view.
2. The imaging device according to claim 1 , wherein the metallic oxide film is selected from the group consisting of hafnium oxide, tantalum pentoxide, zirconium dioxide, and combinations thereof.
3. The imaging device according to claim 1 , wherein the metallic oxide film is a high-dielectric material film.
4. The imaging device according to claim 1 , further comprising:
a plurality of transistors, wherein at least one transistor in the plurality of transistors is shared by the plurality of photoelectric conversion sections.
5. The imaging device according to claim 1 , further comprising:
an insulating layer disposed between a color filter and the first side of the substrate.
6. The imaging device according to claim 1 , further comprising:
a planarization layer disposed between a color filter and the first side of the substrate.
7. The imaging device according to claim 1 , wherein the
second light-shielding film is disposed between a color filter and the first side of the substrate.
8. The imaging device according to claim 1 , further comprising:
a plurality of transistors, wherein at least one of the transistors in the plurality of transistors is a shared transistor shared by the plurality of photoelectric conversion sections, and wherein the shared transistor is a reset transistor allowing charge to be selectively discharged from a floating diffusion to a circuit node.
9. The imaging device according to claim 1 , further comprising:
a plurality of transistors, wherein at least one of the transistors in the plurality of transistors is a shared transistor shared by the plurality of photoelectric conversion sections, and wherein the shared transistor is an amplification transistor coupled to a floating diffusion such that a signal corresponding to a potential of the floating diffusion is output to a signal line.
10. The imaging device according to claim 9 , wherein at least another one of the transistors in the plurality of transistors is an additional shared transistor shared by the plurality of photoelectric conversion sections, and wherein the additional shared transistor is a select transistor that selectively enables operation of the amplification transistor.
11. The imaging device according to claim 1 , further comprising:
an element isolation region, wherein the first light-shielding film is included in the element isolation region.
12. The imaging device according to claim 11 , wherein the element isolation region is a p-type impurity region.
13. The imaging device according to claim 1 , further comprising:
a plurality of transistors; and
a vertical driving circuit, wherein the vertical driving circuit is configured to drive the transistors in the plurality of transistors.
14. The imaging device according to claim 1 , further comprising:
a plurality of on-chip lenses disposed adjacent to the first side of the substrate.
15. The imaging device according to claim 14 , further comprising:
a color filter, wherein the color filter is disposed between the plurality of on-chip lenses and the first side of the substrate.
16. The imaging device according to claim 15 , wherein the color filter includes filters of at least two different colors selected from green, red, and blue.
17. The imaging device according to claim 1 , further comprising:
a transparent planarization layer, disposed between a color filter and the first side of the substrate, wherein the transparent planarization layer comprises an organic material.
18. The imaging device according to claim 1 , further comprising:
at least one multilayer interconnection layer disposed at the second side of the substrate.
19. An electric apparatus comprising:
an optical lens;
a signal processing circuit; and
an imaging device including:
a substrate having a first side as a light-incident side and a second side opposite the first side;
a trench including a first trench and a second trench disposed adjacent to the first trench in a cross-section view;
a metallic oxide film disposed over at least a portion of the first side of the substrate, wherein the metallic oxide film extends continuously from the first trench to the second trench along the first side of the substrate in the cross-section view,
a first light-shielding film including a first portion disposed in the first trench and a second portion disposed in the second trench in the cross-section view;
a plurality of photoelectric conversion sections including a first photoelectric conversion section disposed between the first trench and the second trench in the cross-section view;
a silicon oxide film disposed above the first side of the substrate;
a hafnium oxide film disposed on the silicon oxide film;
a second light-shielding film disposed above the hafnium oxide film; and
a titanium nitride layer disposed between the hafnium oxide film and the second light-shielding film in the cross-section view,
wherein,
the metallic oxide film includes a first portion disposed in the first trench and a second portion disposed in the second trench in the cross-section view.
20. The electric apparatus according to claim 19 , wherein the metallic oxide film is selected from the group consisting of hafnium oxide, tantalum pentoxide, zirconium dioxide, and combinations thereof.
21. The electric apparatus according to claim 19 , wherein the metallic oxide film is a high-dielectric material film.
22. The electric apparatus according to claim 19 , further comprising:
an insulating layer disposed between a color filter and the first side of the substrate.
23. The electric apparatus according to claim 19 , further comprising:
a planarization layer disposed between a color filter and the first side of the substrate.
24. The electric apparatus according to claim 19 , wherein the
second light-shielding film is disposed between a color filter and the first side of the substrate.
25. The electric apparatus according to claim 19 , further comprising:
an element isolation region, wherein the first light-shielding film is included in the element isolation region.
26. The electric apparatus according to claim 25 , wherein the element isolation region is a p-type impurity region.
27. The electric apparatus according to claim 19 , further comprising:
a transparent planarization layer, disposed between a color filter and the first side of the substrate, wherein the transparent planarization layer comprises an organic material.
28. The electric apparatus according to claim 19 , further comprising:
at least one multilayer interconnection layer disposed at the second side of the substrate.