Achieving consistent read times in multi-level non-volatile memory
Systems, apparatuses and methods may provide for technology that reads a lower page, one or more intermediate pages and a last page from a set of multi-level non-volatile memory (NVM) cells, wherein one or more of a lower read time associated with the lower page or a last read time associated with the last page is substantially similar to an intermediate read time associated with the one or more intermediate pages.
1. A system comprising:
a device controller apparatus including a transfer buffer, and
a non-volatile memory (NVM) communicatively coupled to the device controller apparatus, the NVM including a set of multi-level NVM cells and a chip controller apparatus that includes a substrate and logic, implemented in fixed-functionality hardware and coupled to the substrate, the logic to:
read a lower page from the set of multi-level NVM cells,
read one or more intermediate pages from the set of multi-level NVM cells, and
read a last page from the set of multi-level NVM cells, wherein one or more of a lower read time associated with the lower page or a last read time associated with the last page is to be substantially similar to an intermediate read time associated with the one or more intermediate pages.
2. The system of claim 1 , wherein the logic is to:
conduct multiple comparisons between read levels, and
determine bit values of the lower page based on the multiple comparisons to read the lower page.
3. The system of claim 2 , wherein the multiple comparisons are to be conducted between three read levels.
4. The system of claim 2 , wherein the multiple comparisons are to be conducted between four read levels.
5. The system of claim 1 , wherein the logic is to read an upper page to read the one or more intermediate pages, and wherein the intermediate read time is to be associated with the upper page.
6. The system of claim 1 , wherein the logic is to read an extra page to read the one or more intermediate pages, and wherein the intermediate read time is to be associated with the extra page.
7. The system of claim 1 , wherein the set of multi-level NVM cells includes a quad level cell architecture.
8. The system of claim 1 , wherein the set of multi-level NVM cells includes a tri-level cell architecture.
9. The system of claim 1 , wherein the device controller is to store garbage collection data from the lower page, the one or more intermediate pages and the last page to the transfer buffer, and write the garbage collection data to different locations in the set of multi-level NVM cells.
10. An apparatus comprising:
a substrate; and
logic, implemented in fixed-functionality hardware and coupled to the substrate, the logic to:
read a lower page from a set of multi-level non-volatile memory (NVM) cells,
read one or more intermediate pages from the set of multi-level NVM cells, and
read a last page from the set of multi-level NVM cells, wherein one or more of a lower read time associated with the lower page or a last read time associated with the last page is to be substantially similar to an intermediate read time associated with the one or more intermediate pages.
11. The apparatus of claim 10 , wherein the logic is to:
conduct multiple comparisons between read levels, and
determine bit values of the lower page based on the multiple comparisons to read the lower page.
12. The apparatus of claim 11 , wherein the multiple comparisons are to be conducted between three read levels.
13. The apparatus of claim 11 , wherein the multiple comparisons are to be conducted between four read levels.
14. The apparatus of claim 10 , wherein the logic is to read an upper page to read the one or more intermediate pages, and wherein the intermediate read time is to be associated with the upper page.
15. The apparatus of claim 10 , wherein the logic is to read an extra page to read the one or more intermediate pages, and wherein the intermediate read time is to be associated with the extra page.
16. The apparatus of claim 10 , wherein the set of multi-level NVM cells is to include a quad level cell architecture.
17. The apparatus of claim 10 , wherein the set of multi-level NVM cells is to include a tri-level cell architecture.
18. A method comprising:
reading a lower page from a set of multi-level non-volatile memory (NVM) cells;
reading one or more intermediate pages from the set of multi-level NVM cells; and
reading a last page from the set of multi-level NVM cells, wherein one or more of a lower read time associated with the lower page or a last read time associated with the last page is substantially similar to an intermediate read time associated with the one or more intermediate pages.
19. The method of claim 18 , wherein reading the lower page includes:
conducting multiple comparisons between read levels; and
determining bit values of the lower page based on the multiple comparisons.
20. The method of claim 19 , wherein conducting the multiple comparisons includes conducting comparisons between three read levels.
21. The method of claim 19 , wherein conducting the multiple comparisons includes conducting comparisons between four read levels.
22. The method of claim 18 , wherein reading the one or more intermediate pages includes reading an upper page, wherein the intermediate read time is associated with the upper page.
23. The method of claim 18 , wherein reading the one or more intermediate pages includes reading an extra page, wherein the intermediate read time is associated with the extra page.
24. The method of claim 18 , wherein the set of multi-level NVM cells includes a quad level cell architecture.
25. The method of claim 18 , wherein the set of multi-level NVM cells includes a tri-level cell architecture.