Solid state memory device, and manufacturing method thereof
Conductive structure technology is disclosed. In one example, a conductive structure can include an interconnect and a plurality of conductive layers overlying the interconnect. Each conductive layer can be separated from an adjacent conductive layer by an insulative layer. In addition, the conductive structure can include a contact extending through the plurality of conductive layers to the interconnect. The contact can be electrically coupled to the interconnect and insulated from the plurality of conductive layers. Associated systems and methods are also disclosed.
1. A conductive structure, comprising:
an interconnect;
a plurality of conductive layers having a first portion in a periphery region overlying the interconnect and a second portion in at least one of a memory array region or a staircase region, wherein a material of the first and second portions of the plurality of conductive layers is the same material, each conductive layer being separated from an adjacent conductive layer by an insulative layer;
a barrier having a wall configuration, the first and second portions of the plurality of conductive layers being separated from one another by the barrier;
a contact extending through the first portion of the plurality of conductive layers to the interconnect, wherein the contact is electrically coupled to the interconnect and insulated from the first portion of the plurality of conductive layers; and
an insulative liner having a plurality of insulative liner layers disposed about the contact between the contact and the conductive and insulative layers to insulate the contact from the conductive layers.
2. The conductive structure of claim 1 , wherein the contact comprises a plurality of contacts.
3. The conductive structure of claim 2 , wherein adjacent contacts of the plurality of contacts are electrically isolated from one another.
4. The conductive structure of claim 2 , wherein adjacent contacts of the plurality of contacts are separated by at least 200 nm.
5. The conductive structure of claim 1 , wherein at least two of the plurality of insulative liner layers comprise different materials.
6. The conductive structure of claim 1 , wherein the insulative liner is at least about 5 nm thick.
7. The conductive structure of claim 1 , wherein the insulative layer material is closer to the contacts than the conductive layer material.
8. The conductive structure of claim 1 , wherein the contacts and the conductive layer material are separated by a distance of from about 5 nm to about 75 nm.
9. The conductive structure of claim 1 , wherein the plurality of insulative liner layers comprises an oxide material, a nitride material, or a combination thereof.
10. The conductive structure of claim 1 , wherein a first of the plurality of insulative liner layers comprises an oxide material layer and a second of the plurality of insulative liner layers comprises a nitride material layer.
11. The conductive structure of claim 10 , wherein the oxide material layer is an outer layer and the nitride material layer is an inner layer relative to the contacts.
12. The conductive structure of claim 2 , wherein the interconnect comprises a plurality of interconnects.
13. The conductive structure of claim 12 , wherein each of the plurality of contacts is electrically coupled to a different one of the plurality of interconnects.
14. The conductive structure of claim 1 , wherein the contact is separated from the plurality of conductive layers by insulative material.
15. The conductive structure of claim 1 , wherein the contact comprises a column configuration.
16. The conductive structure of claim 1 , wherein at least one of the plurality of conductive layers is electrically coupled to ground.
17. The conductive structure of claim 1 , wherein the conductive layers comprise polysilicon, tungsten, nickel, titanium, platinum, aluminum, gold, tungsten nitride, tantalum nitride, titanium nitride, or a combination thereof.
18. The conductive structure of claim 1 , wherein the insulative layer comprises an oxide material, a nitride material, or a combination thereof.
19. A method for making a conductive structure, comprising:
forming an opening through a first portion of a plurality of conductive layers in a periphery region, the plurality of conductive layers having a second portion in at least one of a memory array region or a staircase region, wherein a material of the first and second portions of the plurality of conductive layers is the same material, each conductive layer being separated from an adjacent conductive layer by an insulative layer, the opening extending to an interconnect underlying the conductive and insulative layers;
forming a contact in the opening electrically coupled to the interconnect; and
insulating the contact from the first portion of the plurality of conductive layers with an insulative liner having a plurality of insulative liner layers disposed about the contact between the contact and the conductive and insulative layers, wherein the first and second portions of the plurality of conductive layers are separated from one another by a barrier having a wall configuration.
20. The method of claim 19 , wherein forming an opening comprises forming a plurality of openings, and forming the contact in the opening comprises forming a plurality of contacts in the plurality of openings.
21. The method of claim 19 , wherein the opening comprises an elongated configuration.
22. The method of claim 19 , wherein at least one of the plurality of conductive layers is electrically coupled to ground.
23. The method of claim 19 , wherein the conductive layers comprise polysilicon, tungsten, nickel, titanium, platinum, aluminum, gold, tungsten nitride, tantalum nitride, titanium nitride, or a combination thereof.
24. The method of claim 19 , wherein the insulative layers comprise an oxide material, a nitride material, or a combination thereof.