IP Library Granted Patent US 9,922,702
Granted Patent B1
US 9,922,702 · App. 15/397,035 · Granted Mar 20, 2018

Apparatus for improving read stability

Inventors: Amarnath Shanmugam (Austin, TX); Anik Basu (Austin, TX); Steve P. Ferrera (Austin, TX); Srinivas Rajamani (Austin, TX); Feroze A. Merchant (Austin, TX)
Assignee: Intel Corporation
G11C11/419G11C11/412H03K19/20
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Quick Facts
Patent No.
US 9,922,702
App. No.
15/397,035
Granted
Mar 20, 2018
Kind
B1
Abstract

Described is an apparatus which comprises: a pass-gate; a sleep transistor configured as a diode-connected device controllable by the pass-gate; and a word-line driver coupled to the sleep transistor and the pass-gate.

Claims (37)

1. An apparatus comprising:

a first transistor coupled to a first supply node;

a word-line driver coupled in series with the first transistor, wherein the word-line driver has a second supply node coupled to the first transistor, and wherein the word-line driver is to provide a word-line signal for a memory; and

a second transistor coupled to the second supply node and to a gate terminal of the first transistor, wherein the second transistor is controllable by a gated low power mode signal, wherein the second transistor has a source/drain terminal coupled to a gate of the first transistor, and wherein the second transistor has a drain/source terminal coupled to the second power supply node.

2. The apparatus of claim 1 , wherein the word-line driver comprises:

a third transistor coupled to the first and second transistors; and

a fourth transistor coupled in series with the third transistor, wherein gate terminals of the third and fourth transistor are controllable by an input word-line signal.

3. The apparatus of claim 1 comprises a tristate-able driver having an output coupled to the first and second transistors.

4. The apparatus of claim 3 , wherein the tristate-able driver comprises a fifth transistor coupled to the first supply node and to the first and second transistors, and wherein the fifth transistor is controllable by a low power mode signal.

5. The apparatus of claim 4 , wherein the tristate-able driver comprises a sixth transistor coupled in series with the fifth transistor, and controllable by the low power mode signal.

6. The apparatus of claim 5 , wherein the tristate-able driver comprises a seventh transistor coupled in series with the sixth transistor, and wherein the seventh transistor is to be driven by a logic gate which is to provide the gated low power mode signal.

7. The apparatus of claim 6 , wherein second transistor is to be driven by the logic gate.

8. The apparatus of claim 6 , wherein the logic gate comprises one of: NAND gate, NOR, AND, or OR gate.

9. The apparatus of claim 1 , wherein the supply node is a power supply node.

10. An apparatus comprising:

a pass-gate;

a sleep transistor configured as a diode-connected device controllable by the pass-gate, wherein the pass-gate has a source/drain terminal coupled to a gate of the sleep transistor, and wherein the pass-gate has a drain/source terminal coupled to a power supply node; and

a word-line driver coupled to the sleep transistor and the pass-gate via the power supply node.

11. The apparatus of claim 10 comprises tristate-able driver coupled to the sleep transistor.

12. The apparatus of claim 11 , wherein the tristate-able driver includes a footer transistor, and wherein a gate terminal of the footer transistor is coupled to the pass-gate.

13. The apparatus of claim 12 comprises a logic gate having an output coupled to the gate terminal of the footer transistor.

14. A system comprising:

a processor;

a memory comprising a static random access memory (SRAM);

a word-line driver coupled to the memory, wherein the word-line driver comprises:

a first transistor coupled to a first supply node;

a driver coupled in series with the first transistor, wherein the driver has a second supply node coupled to the first transistor, and wherein the driver is to provide a word-line signal for the memory; and

a second transistor coupled to the second supply node and to a gate terminal of the first transistor, wherein the second transistor is controllable by a gated low power mode signal, wherein the second transistor has a source/drain terminal coupled to a gate of the first transistor, and wherein the second transistor has a drain/source terminal coupled to the second power supply node; and

a wireless interface to allow the processor to communicate with another device.

15. The system of claim 14 , wherein the driver of the word-line driver comprises:

a third transistor coupled to the first and second transistors; and

a fourth transistor coupled in series with the third transistor, wherein gate terminals of the third and fourth transistor are controllable by an input word-line signal.

16. The system of claim 14 , wherein the word-line driver comprises a tristate-able driver having an output coupled to the first and second transistors.

17. The system of claim 16 , wherein the tristate-able driver comprises a fifth transistor coupled to the first supply node and to the first and second transistors, and wherein the fifth transistor is controllable by a low power mode signal.

18. The system of claim 17 , wherein the tristate-able driver comprises a sixth transistor coupled in series with the fifth transistor, and controllable by the low power mode signal.

19. The system of claim 18 , wherein the tristate-able driver comprises a seventh transistor coupled in series with the sixth transistor, and wherein the seventh transistor is to be driven by a logic gate.

20. The system of claim 19 , wherein the second transistor is driven by the logic gate.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061175/0176 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 16, 2017
From: SHANMUGAM, AMARNATH; BASU, ANIK; FERRERA, STEVE P.; RAJAMANI, SRINIVAS; MERCHANT, FEROZE A.
To: INTEL CORPORATION
Reel/Frame 041593/0356 →