Semiconductor device and method of manufacturing the same
In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET.
1. A manufacturing method of a semiconductor device including a MISFET, comprising steps of:
(a) selectively forming a first insulating film in a semiconductor substrate;
(b) forming an impurity region as a source region or a drain region of the MISFET in the semiconductor substrate such that the impurity region contains the first insulating film;
(c) forming a gate insulating film of the MISFET over the semiconductor substrate;
(d) forming a gate electrode of the MISFET over the gate insulating film and the first insulating film such that an edge of the gate electrode is located over the first insulating film in a gate length direction;
(e) after the step (d), forming a second insulating film covering the MISFET;
(f) forming a third insulating film over the second insulating film;
(g) planarizing at least a surface of the third insulating film;
(h) after the step (g), forming a fourth insulating film over the third insulating film;
(i) forming a first plug in the fourth, third and second insulating films in order to reach the impurity region; and
(j) forming a first wire over the fourth insulating film in order to be connected with the first plug,
wherein the second insulating film is formed by using a first plasma,
wherein the third insulating film is formed by using a second plasma, and
wherein a density of the first plasma is higher than a density of the second plasma.
2. A manufacturing method of a semiconductor device according to claim 1 , wherein at the step (g), the third and second insulating films are planarized, and
wherein at the step (h), the fourth insulating film is formed so as to be in contact with the second and third insulating films.
3. A manufacturing method of a semiconductor device according to claim 2 , wherein the step (g) is performed by a Chemical Mechanical Polishing method.
4. A manufacturing method of a semiconductor device according to claim 1 , wherein the fourth insulating film is formed by using a third plasma, and
wherein the density of the first plasma is higher than a density of the third plasma.
5. A manufacturing method of a semiconductor device according to claim 4 , wherein the second insulating film is formed by a High Density Plasma method.
6. A manufacturing method of a semiconductor device according to claim 5 , wherein each of the second, third and fourth insulating films includes a silicon oxide film.
7. A manufacturing method of a semiconductor device according to claim 6 , wherein a silicon nitride film is formed between the second insulating film and the semiconductor substrate.
8. A manufacturing method of a semiconductor device according to claim 1 , wherein the step (a) includes:
(a1) forming a groove in the semiconductor substrate; and
(a2) embedding the first insulating film in the groove.
9. A manufacturing method of a semiconductor device according to claim 1 , wherein the first plug includes a tungsten film.
10. A manufacturing method of a semiconductor device according to claim 1 , wherein the gate electrode and the first wire are not overlapped planarly with each other.