Liquid crystal display device
It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.
1. A semiconductor device comprising:
a first pixel comprising:
a first common electrode over an insulating surface;
a gate electrode over the insulating surface;
a common wiring in contact with a top surface of the first common electrode;
a gate insulating layer over the first common electrode, the gate electrode, and the common wiring;
a semiconductor layer over the gate insulating layer;
an insulating layer over the gate insulating layer and the semiconductor layer;
a pixel electrode over the insulating layer; and
a connection electrode over the insulating layer; and
a second pixel adjacent to the first pixel,
wherein the first common electrode comprises a region overlapping with the connection electrode and a region not overlapping with the connection electrode,
wherein the first common electrode is electrically connected to a second common electrode of the second pixel though the connection electrode,
wherein the first common electrode and the second common electrode are formed by processing a first transparent conductive layer,
wherein the gate electrode and the common wiring are formed by processing a second light-shielding conductive layer, and
wherein the pixel electrode and the connection electrode are formed by processing a third transparent conductive layer.
2. The semiconductor device according to claim 1 , wherein each of the pixel electrode and the connection electrode is in contact with a top surface of the insulating layer.
3. The semiconductor device according to claim 1 ,
wherein the pixel electrode has a slit,
wherein the first common electrode overlaps with the slit,
wherein a width of the first common electrode is larger than a width of the slit, and
wherein the gate insulating layer is in contact with the top surface of the first common electrode in both sides of the common wiring.
4. A semiconductor device comprising:
a first pixel comprising:
a first common electrode over an insulating surface;
a gate electrode over the insulating surface;
a common wiring in contact with a top surface of the first common electrode;
a gate insulating layer over the first common electrode, the gate electrode, and the common wiring;
a semiconductor layer over the gate insulating layer;
an insulating layer over the gate insulating layer and the semiconductor layer;
a pixel electrode over the insulating layer; and
a connection electrode over the insulating layer; and
a second pixel adjacent to the first pixel,
wherein the first common electrode comprises a region overlapping with the connection electrode and a region not overlapping with the connection electrode,
wherein the first common electrode is electrically connected to a second common electrode of the second pixel though the connection electrode,
wherein the first common electrode and the second common electrode comprise a transparent conductive material and are in contact with the insulating surface,
wherein the gate electrode and the common wiring comprise a light-shielding conductive material and are in contact with a bottom surface of the gate insulating layer, and
wherein the pixel electrode and the connection electrode comprise a transparent conductive material.
5. The semiconductor device according to claim 4 ,
wherein the transparent conductive material comprised in the first common electrode and the second common electrode is an indium tin oxide, and
wherein the transparent conductive material comprised in the pixel electrode and the connection electrode is an indium tin oxide.
6. The semiconductor device according to claim 4 , wherein each of the pixel electrode and the connection electrode is in contact with a top surface of the insulating layer.
7. The semiconductor device according to claim 4 ,
wherein the pixel electrode has a slit,
wherein the first common electrode overlaps with the slit,
wherein a width of the first common electrode is larger than a width of the slit, and
wherein the gate insulating layer is in contact with the top surface of the first common electrode in both sides of the common wiring.
8. A semiconductor device comprising:
a first pixel comprising:
a first common electrode over an insulating surface;
a gate electrode over the insulating surface;
a common wiring in contact with a top surface of the first common electrode;
a gate insulating layer over the first common electrode, the gate electrode, and the common wiring;
a semiconductor layer over the gate insulating layer;
a first insulating layer over the gate insulating layer and the semiconductor layer;
a pixel electrode over the first insulating layer;
a connection electrode over the first insulating layer; and
a second insulating layer over the pixel electrode; and
a second pixel adjacent to the first pixel,
wherein the first common electrode comprises a region overlapping with the connection electrode and a region not overlapping with the connection electrode,
wherein the first common electrode is electrically connected to a second common electrode of the second pixel though the connection electrode,
wherein the first common electrode and the second common electrode are formed by processing a first transparent conductive layer,
wherein the gate electrode and the common wiring are formed by processing a second light-shielding conductive layer,
wherein the pixel electrode and the connection electrode are formed by processing a third transparent conductive layer,
wherein the second insulating layer is capable of adjusting cell gap, and
wherein the second insulating layer comprise a region overlapping with the common wiring.
9. The semiconductor device according to claim 8 , wherein each of the pixel electrode and the connection electrode is in contact with a top surface of the first insulating layer.
10. The semiconductor device according to claim 8 ,
wherein the pixel electrode has a slit,
wherein the first common electrode overlaps with the slit,
wherein a width of the first common electrode is larger than a width of the slit, and
wherein the gate insulating layer is in contact with the top surface of the first common electrode in both sides of the common wiring.