IP Library Granted Patent US 10,383,222
Granted Patent B2
US 10,383,222 · App. 15/398,126 · Granted Aug 13, 2019

Surface-treated copper foil

Inventors: Atsushi Miki (Ibaraki, JP); Ryo Fukuchi (Ibaraki, JP); Hideta Arai (Ibaraki, JP)
Assignee: JX Nippon Mining & Metals Corporation
H05K1/09C22C9/00C22C30/02C22F1/08C25D3/12C25D3/38C25D5/12C25D7/0614C25D11/38C25F1/00H05K3/382C25D3/562C25D3/565C25D3/58H05K3/389H05K2201/0355
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Quick Facts
Patent No.
US 10,383,222
App. No.
15/398,126
Granted
Aug 13, 2019
Kind
B2
Abstract

To provide a surface-treated copper foil that is excellent in adhesiveness to an insulating substrate at ordinary temperature, and is capable of suppressing the formation of blister on application of a thermal load of reflow soldering to a copper-clad laminate board constituted by the copper foil. A surface-treated copper foil having a surface-treated surface, the surface-treated copper foil satisfying one or more of the following conditions (1) to (3): by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO 2 conversion), (1) the N concentration is from 1.5 to 7.5 atomic %; (2) the C concentration is from 12 to 30 atomic %; and (3) the Si concentration is 3.1 atomic % or more and the O concentration is from 40 to 48 atomic %.

Claims (40)

1. A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising an N concentration of from 1.5 atomic % to 7.5 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

2. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises a C concentration of from 12 atomic % to 30 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

3. A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising a C concentration of from 12 atomic % to 30 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

4. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

5. The surface-treated copper foil according to claim 2 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

6. The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

7. A surface-treated copper foil comprising a surface-treated surface, the surface-treated copper foil comprising an Si concentration of 3.1 atomic % or more and an O concentration of from 40 atomic % to 48 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

8. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

9. The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

10. The surface-treated copper foil according to claim 5 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

11. The surface-treated copper foil according to claim 7 , wherein the surface-treated copper foil comprises an N concentration of from 0.5 atomic % to 6.0 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

12. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

13. The surface-treated copper foil according to claim 3 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

14. The surface-treated copper foil according to claim 5 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

15. The surface-treated copper foil according to claim 7 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

16. The surface-treated copper foil according to claim 10 , wherein the surface-treated copper foil comprises a C concentration of from 8 atomic % to 25 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 1.0 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

17. The surface-treated copper foil according to claim 16 , wherein the surface-treated copper foil satisfies one or two of the following conditions (A) and (B):

(A) the surface-treated copper foil comprising an N concentration of from 3.7 atomic % to 6.4 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion;

(B) the surface-treated copper foil comprising a C concentration of from 21.6 atomic % to 23.8 atomic % by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min in terms of SiO 2 conversion.

18. The surface-treated copper foil according to claim 1 , wherein the surface-treated surface comprises a ten-point average surface roughness Rz of 1.5 μm or less.

19. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is a rolled copper foil or an electrolytic copper foil.

20. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is for attaching to a liquid crystal polymer.

21. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is for attaching to a polyimide resin.

22. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil is used in a printed circuit board that is used under a high frequency exceeding 1 GHz.

23. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains, on a surface of the copper foil, one or more layers selected from the group consisting of a roughening treatment layer, a heat resistance treatment layer, a rust prevention treatment layer, a chromate treatment layer, and a silane coupling treatment layer.

24. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains, on a surface of the copper foil, one or more layers selected from the group consisting of a heat resistance treatment layer, a rust prevention treatment layer, a chromate treatment layer, and a silane coupling treatment layer.

25. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains a heat resistance treatment layer or a rust prevention treatment layer on a surface of the copper foil, contains a chromate treatment layer on the heat resistance treatment layer or the rust prevention treatment layer, and contains a silane coupling treatment layer on the chromate treatment layer.

26. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains a heat resistance treatment layer on a surface of the copper foil, contains a rust prevention treatment layer on the heat resistance treatment layer, contains a chromate treatment layer on the rust prevention treatment layer, and contains a silane coupling treatment layer on the chromate treatment layer.

27. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains a chromate treatment layer on a surface of the copper foil, and contains a silane coupling treatment layer on the chromate treatment layer.

28. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains a roughening treatment layer on a surface of the copper foil, contains a chromate treatment layer on the roughening treatment layer, and contains a silane coupling treatment layer on the chromate treatment layer.

29. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains a roughening treatment layer on a surface of the copper foil, contains one or more layers selected from the group consisting of a rust prevention treatment layer and a heat resistance treatment layer on the roughening treatment layer, contains a chromate treatment layer on the one or more layers selected from the group consisting of a rust prevention treatment layer and a heat resistance treatment layer, and contains a silane coupling treatment layer on the chromate treatment layer.

30. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains a roughening treatment layer on a surface of the copper foil, contains a rust prevention treatment layer on the roughening treatment layer, contains a chromate treatment layer on the rust prevention treatment layer, and contains a silane coupling treatment layer on the chromate treatment layer.

31. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains a roughening treatment layer on a surface of the copper foil, and contains a silane coupling treatment layer on the roughening treatment layer.

32. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains a silane coupling treatment layer on a surface of the copper foil.

33. The surface-treated copper foil according to claim 1 , wherein the surface-treated copper foil contains a roughening treatment layer on a surface of the copper foil, and the roughening treatment layer contains a primary particle layer and a secondary particle layer on the primary particle layer.

34. The surface-treated copper foil according to claim 33 , wherein the secondary particle layer contains a ternary alloy system containing copper, cobalt, and nickel.

35. The surface-treated copper foil according to claim 33 , wherein the primary particle layer comprises an average particle diameter of from 0.25 μm to 0.45 μm, and the secondary particle layer comprises an average particle diameter of from 0.05 μm to 0.25 μm.

36. A copper foil-laminated board comprising the surface-treated copper foil according to claim 1 and an insulating substrate that is adhered to the surface-treated surface of the surface-treated copper foil.

37. A printed wiring board comprising the surface-treated copper foil according to claim 1 .

38. An electronic apparatus comprising the printed wiring board according to claim 37 .

Assignments (2)
CHANGE OF ADDRESS Recorded Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 30, 2017
From: MIKI, ATSUSHI; FUKUCHI, RYO; ARAI, HIDETA
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 042525/0314 →
Priority Claims (2)
JP 2016-000119 · Jan 4, 2016 · national
JP 2016-230684 · Nov 28, 2016 · national
Continuity (2)
Continuation 15394983 · Dec 30, 2016
Related Publication 20170196083A1 · Jul 6, 2017