Deposition of boron and carbon containing materials
Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.
1. A method of depositing a B x C film on a substrate in a reaction space, comprising:
contacting the substrate with a vapor phase boron precursor in a carrier gas at a process temperature of less than 400° C. to form the B x C film on the substrate, wherein x is 0.1 to 25, wherein the vapor phase boron precursor decomposes on the substrate, and wherein the B x C film has an etch rate in hydrofluoric acid of less than 0.2 nm/min.
2. The method of claim 1 , wherein the B x C film has a reduced etch rate relative to thermal silicon oxide.
3. The method of claim 1 , wherein the carrier gas comprises nitrogen.
4. The method of claim 1 , wherein the carrier gas comprises at least one of helium and neon.
5. The method of claim 1 , wherein a film density of the B x C-film is less than 2.5 g/cm 3 .
6. The method of claim 1 , wherein the substrate comprises silicon.
7. The method of claim 6 , wherein the substrate comprises silicon nitride.
8. The method of claim 1 , wherein the substrate comprises a three-dimensional structure, and wherein contacting the substrate with the reactant pulse comprises contacting the reactant pulse with the three-dimensional structure on the substrate to form the B x C film on the three-dimensional structure.
9. The method of claim 8 , wherein the B x C film has a step coverage of greater than 95% on the three-dimensional structure.
10. The method of claim 1 , wherein the B x C film is an etch stop layer.
11. The method of claim 1 , wherein the B x C film is formed as part of a patterning process.
12. The method of claim 1 , further comprising exposing the B x C film to a post-deposition plasma treatment process subsequent to depositing the B x C film.
13. The method of claim 12 , wherein the post-deposition plasma treatment process comprises generating a plasma from at least one of a noble gas, nitrogen gas, oxygen gas, and ozone.
14. A method of forming an etch stop layer on a substrate in a reaction space, comprising:
contacting a substrate with a vapor phase boron precursor at a process temperature of less than 400° C. such that the boron precursor decomposes on the substrate, wherein the etch stop layer comprises B x C, where x is from 0.1 to 25.
15. The method of claim 14 , wherein the B x C film is formed as part of a patterning process.
16. The method of claim 14 , wherein the etch stop layer has a film density of 2.0 g/cm 3 to 2.5 g/cm 3 .
17. The method of claim 14 , wherein the etch stop layer has a reduced etch rate relative to thermal silicon oxide.
18. The method of claim 14 , wherein the process temperature is between 375° C. and 400° C.
19. The method of claim 14 , wherein the process temperature is less than 350° C.
20. The method of claim 14 , further comprising exposing the substrate to a post-deposition plasma treatment process subsequent to depositing the etch stop layer.
21. The method of claim 20 , wherein the post-deposition plasma treatment process comprises generating a plasma from at least one of a noble gas, nitrogen gas, oxygen gas, and ozone.