Decomposable s-tetrazine based polymers for single walled carbon nanotube applications
A process for purifying semiconducting single-walled carbon nanotubes (sc-SWCNTs) extracted with a conjugated polymer, the process comprising exchanging the conjugated polymer with an s-tetrazine based polymer in a processed sc-SWCNT dispersion that comprises the conjugated polymer associated with the sc-SWCNTs. The process can be used for production of thin film transistors. In addition, disclosed herein is use of an s-tetrazine based polymer for purification of semiconducting single-walled carbon nanotubes (sc-SWCNTs).
1. A process for purifying semiconducting single-walled carbon nanotubes (sc-SWCNTs) extracted with a conjugated polymer, the process comprising exchanging the conjugated polymer with an s-tetrazine based polymer in a processed sc-SWCNT dispersion that comprises the conjugated polymer associated with the sc-SWCNTs.
2. The process of claim 1 , further comprising decomposing the s-tetrazine based polymer by photo irradiation or thermal treatment; followed by removal of the decomposition products.
3. The process of claim 1 , wherein the s-tetrazine based polymer has the following structure:
where A is O, S, Se or C═C; n is an integer from 1 to 4; R 1 is independently H, F, CN or a C 1 -C 20 linear or branched aliphatic group; Ar is one or more substituted or unsubstituted aromatic units; and, m is an integer 5 or greater.
4. The process of claim 1 , wherein the s-tetrazine based polymer is PBDTFTz:
5. The process of claim 1 , wherein the s-tetrazine based polymer is PDTSTTz:
6. The process of claim 1 , wherein the s-tetrazine based polymer is:
and wherein: R 1 and R 2 =2-ethylhexyl; or R 1 =2-ethylhexyl and R 2 =hexyl; or R 1 =hexyl and R 2 =2-ethylhexyl; or R 1 and R 2 =hexyl; or R 1 =methyl and R 2 =2-ethylhexyl.
7. The process of claim 1 , wherein the s-tetrazine based polymer is PCPDTFTz:
in which Ar=cyclopenta[2,1-b; 3.4-b′]dithiophene.
8. The process of claim 2 , wherein the decomposition products are removed by rinsing or evaporation.
9. The process of claim 1 , wherein the conjugated polymer comprises a polyfluorene.
10. The process of claim 1 , wherein the conjugated polymer comprises a polythiophene.
11. The process according to claim 1 , wherein the conjugated polymer is poly(9,9-di-n-dodecylfluorene) (PFDD).
12. The process according to claim 1 , wherein the weight ratio of the conjugated polymer to the sc-SWCNTs has a maximum value of 2.
13. The process according to claim 1 , wherein the weight ratio of the s-tetrazine based polymer to the sc-SWCNTs has a maximum value of 4.
14. The process according to claim 1 , wherein the weight ratio of the s-tetrazine based polymer to the sc-SWCNTs is between 1 and 4.
15. A method for producing thin film transistors, the method comprising:
a) exchanging a conjugated polymer with an s-tetrazine based polymer in a processed sc-SWCNT dispersion that comprises the conjugated polymer associated with the sc-SWCNTs, resulting in an associated complex of s-tetrazine/SWCNTs (15);
b) removing the displaced conjugated polymer;
c) applying the resulting dispersion to a substrate;
d) applying heat and/or UV light to decompose the s-tetrazine based polymer; and
e) removing the resulting decomposition products.
16. The method according to claim 15 , wherein the s-tetrazine based polymer has the following structure:
where A is O, S, Se or C═C; n is an integer from 1 to 4; R 1 is independently H, F, CN or a C 1 -C 20 linear or branched aliphatic group; Ar is one or more substituted or unsubstituted aromatic units; and, m is an integer 5 or greater.
17. The method of claim 16 , wherein the wherein the s-tetrazine based polymer is PBDTFTz:
18. The method of claim 16 wherein the conjugated polymer is poly(9,9-di-n-dodecylfluorene) (PFDD).