BATCH FABRICATED MICROCONNECTORS

1 - 27 . (canceled)

28 . A multilayer microconnector structure, comprising:

a substrate having opposing first and second surfaces;

a plurality of microconnectors disposed in an array of a selected pitch at the first substrate surface, each microconnector comprising a plurality of stacked layers of a conductor material extending upwardly from the first substrate surface; and

a dilation having opposing first and second dilation surfaces, the first dilation surface having a first array of electrical contacts disposed thereat having a pitch equal to that of the selected pitch, each electrical contact disposed in electrical communication with a respective microconnector of the plurality of microconnectors, and the dilation having a second array of electrical contacts disposed at the second dilation surface, the second array having a second pitch different from the selected pitch, the dilation comprising transmission lines extending within the dilation, each line extending from a respective contact of the first dilation surface to a respective contact of the second dilation surface.

29 . The multilayer microconnector structure according to claim 28 , wherein at least one of the first and second substrate surfaces includes one or more of an active electronic component and a passive electronic component.

30 . The multilayer microconnector structure according to claim 29 , wherein the passive electronic component includes one or more of a thin-film, thick-film, or surface mount resistor.

31 . The multilayer microconnector structure according to claim 28 , wherein each microconnector includes a center conductor and an outer conductor, and wherein at least one of an active electronic component and a passive electronic component is electrically connected between the center and outer conductors.

32 . The multilayer microconnector structure according to claim 28 , comprising one or more of an active electronic component and a passive electronic component operably connected within each of the plurality of microconnectors.

33 . The multilayer microconnector structure according to claim 28 , wherein the substrate is an active device.

34 . The multilayer microconnector structure according to claim 28 , wherein the substrate includes a circuit board.

35 . The multilayer microconnector structure according to claim 28 , wherein the substrate includes a MMIC.

36 . The multilayer microconnector structure according to claim 28 , wherein each microconnector includes a hollow waveguide.

37 . The multilayer microconnector structure according to claim 28 , wherein each microconnector is a hollow waveguide.

38 . The multilayer microconnector structure according to claim 28 , wherein the dilation transmission lines include coaxial transmission lines.

39 . A method for forming a multilayer microconnector structure by a sequential build process, comprising:

depositing a plurality of layers on a first substrate, wherein the layers comprise one or more of a first conductor material and a first sacrificial material; and

removing the first sacrificial material, thereby forming a multilayer microconnector structure comprising a plurality of microconnectors disposed in an array of a selected pitch at the first substrate surface, each microconnector comprising a plurality of stacked layers of the first conductor material extending upwardly from the first substrate surface.

40 . The method according to claim 39 , comprising:

depositing a plurality of second layers on a second substrate, wherein the second layers comprise one or more of a second conductor material and a second sacrificial material; and

removing the second sacrificial material, thereby forming a dilation having opposing first and second dilation surfaces, the first dilation surface having a first array of electrical contacts disposed thereat having a pitch equal to that of the selected pitch, and the dilation having a second array of electrical contacts disposed at the second dilation surface, the second array having a second pitch different from the selected pitch, the dilation comprising transmission lines formed of the second conductor material, each line extending from a respective contact of the first dilation surface to a respective contact of the second dilation surface.

41 . The method of claim 40 , wherein the dilation transmission lines include coaxial transmission lines.

42 . The method of claim 39 , wherein the first and second conductor materials are metal.

43 . The method of claim 39 , wherein the substrate is an active device.

44 . The method of claim 39 , wherein the substrate includes a circuit board.

45 . The method of claim 39 , wherein the substrate includes a MMIC.

46 . The method of claim 39 , wherein each microconnector includes a hollow waveguide.

47 . The method of claim 39 , wherein each microconnector is a hollow waveguide.

48 . A method for forming a multilayer microconnector structure by a sequential build process, comprising:

depositing a plurality of layers on a substrate, wherein the layers comprise one or more of a conductor material and a sacrificial material; and

removing the sacrificial material, thereby forming a dilation having opposing first and second dilation surfaces, the first dilation surface having a first array of electrical contacts disposed thereat having a first pitch and having a second array of electrical contacts disposed at the second dilation surface, the second array having a second pitch different from the first pitch, the dilation comprising transmission lines formed of the conductor material, each line extending from a respective contact of the first dilation surface to a respective contact of the second dilation surface.

49 . The method of claim 48 , wherein the dilation transmission lines include coaxial transmission lines.

50 . The method of claim 48 , wherein the conductor material is metal.

51 . The method of claim 48 , comprising removing the dilation from the substrate.