Intermetallic contact for carbon nanotube FETs
A field effect transistor includes a carbon nanotube layer formed adjacent to a gate structure. Two intermetallic contacts are formed on the carbon nanotube layer. The two intermetallic contacts include an oxidation resistant compound having a work function below about 4.4 electron-volts.
1. A field effect transistor, comprising:
a carbon nanotube layer formed adjacent to a gate structure;
at least two intermetallic contacts, including an alloy of two or more metals, formed on the carbon nanotube layer, the at least two intermetallic contacts including an oxidation resistant compound having a work function below about 4.4 electron-volts; and
a conductive cap disposed on each of the at least two intermetallic contacts.
2. The transistor as recited in claim 1 , wherein the at least two intermetallic contacts include a metal boride.
3. The transistor as recited in claim 1 , wherein the at least two intermetallic contacts include a rare earth boride.
4. The transistor as recited in claim 1 , wherein the at least two intermetallic contacts include a material selected from the group consisting of lanthanum boride, cerium boride and samarium boride.
5. The transistor as recited in claim 1 , wherein the at least two intermetallic contacts include a rare earth aluminide.
6. The transistor as recited in claim 1 , wherein the at least two intermetallic contacts include a material selected from the group consisting of lanthanum aluminide, europium aluminide and strontium aluminide.
7. The transistor as recited in claim 1 , wherein the gate structure includes a gate dielectric including an oxygen containing compound.
8. The transistor as recited in claim 1 , wherein the gate structure includes a gate electrode that includes a semiconductor substrate.
9. The transistor as recited in claim 1 , further comprising a capping layer formed on the at least two intermetallic contacts.
10. The transistor as recited in claim 9 , wherein the capping layer includes at least one of aluminum and titanium.
11. A field effect transistor, comprising:
a substrate forming a back gate;
a gate dielectric formed over the substrate;
a carbon nanotube layer formed on the gate dielectric;
intermetallic contacts formed on the carbon nanotube layer, the intermetallic contacts including a rare earth metal boride or a rare earth metal aluminide; and
a cladding layer formed over the intermetallic contacts.
12. The transistor as recited in claim 11 , wherein the intermetallic contacts include a material selected from the group consisting of lanthanum boride, cerium boride and samarium boride.
13. The transistor as recited in claim 11 , wherein the intermetallic contacts include a material selected from the group consisting of lanthanum aluminide, europium aluminide and strontium aluminide.
14. The transistor as recited in claim 11 , wherein the gate dielectric includes an oxygen containing compound.
15. The transistor as recited in claim 11 , wherein the intermetallic contacts include an oxidation resistance greater than lanthanum.
16. The transistor as recited in claim 11 , wherein the intermetallic contacts include a material having a work function below about 4.4 electron-volts.