IP Library Granted Patent US 9,960,197
Granted Patent B1
US 9,960,197 · App. 15/405,519 · Granted May 1, 2018

Molded image sensor chip scale packages and related methods

Inventor: Weng-Jin Wu (Hsinchu, TW)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L27/14618H01L23/3114H01L27/14636H01L27/14685H01L27/14698
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Quick Facts
Patent No.
US 9,960,197
App. No.
15/405,519
Granted
May 1, 2018
Kind
B1
Abstract

Implementations of a molded image sensor chip scale package may include an image sensor having a first side and a second side. A first cavity wall and a second cavity wall may be coupled to the first side of the image sensor and extend therefrom. The first cavity wall and the second cavity wall may form a cavity over the image sensor. A transparent layer may be coupled to the first cavity wall and the second cavity wall. A redistribution layer (RDL) may be coupled to the second side of the image sensor. At least one interconnect may be directly coupled to the RDL. A mold material may encapsulate a portion of the RDL, a portion of the image sensor, and a side of each cavity wall, and a portion of the transparent layer.

Claims (45)

1. A chip scale package comprising:

an image sensor comprising a first side and a second side;

a first cavity wall and a second cavity wall coupled to the first side of the image sensor and extending therefrom, wherein the first cavity wall and the second cavity wall form a cavity over the image sensor;

a transparent layer coupled to the first cavity wall and to the second cavity wall;

a redistribution layer (RDL) coupled to the second side of the image sensor;

at least one interconnect directly coupled to the RDL; and

a mold material, wherein the mold material encapsulates a portion of the RDL, a portion of the image sensor, a side of each cavity wall, and a portion of the transparent layer; and

wherein the mold material directly covers a first interface between the transparent layer and the first cavity wall and a second interface between the transparent layer and the second cavity wall.

2. The package of claim 1 , wherein the mold material extends along a portion of the RDL, a side of each cavity wall, and a portion of the transparent layer.

3. The package of claim 1 , wherein the mold material forms a layer parallel with the image sensor and extends along a portion of the RDL, a side of each cavity wall, and a portion of the transparent layer in a direction perpendicular to the image sensor.

4. The package of claim 1 , wherein the mold material extends into a groove formed in the transparent layer.

5. The package of claim 1 , wherein the interconnect is one of a solder ball, a pillar, a copper ball, a gold ball, and any combination thereof.

6. The package of claim 1 , wherein the mold material is a laminatable molding material.

7. A method of forming a chip scale package comprising:

providing a wafer comprising a first side and a second side, the wafer comprising a plurality of image sensors;

coupling the first side of the wafer to a first side of a plurality of cavity walls;

coupling a transparent layer to a second side of the plurality of cavity walls;

coupling a redistribution layer (RDL) to the second side of the wafer;

forming an interconnect array on the RDL;

forming a plurality of notches between each image sensor, wherein the plurality of notches extends from the image sensor into the transparent layer;

placing a mold material over the interconnect array to encapsulate a portion of the RDL;

filling the plurality of notches with the mold material, wherein the mold material directly covers a plurality of interfaces between the transparent layer and the plurality of cavity walls; and

singulating each image sensor at each notch of the plurality of notches to form a plurality of chip scale packages.

8. The method of claim 7 , wherein singulating further comprises forming a layer of the mold material that extends into a groove of the transparent layer.

9. The method of claim 7 , wherein filling the plurality of notches with the mold material further comprises extending the mold material along a portion of the RDL, a side of each cavity wall of the plurality of cavity walls, and a portion of the transparent layer.

10. The method of claim 7 , wherein the mold material is one of a solid mold material and a liquid mold material.

11. The method of claim 7 , wherein the mold material is laminatable.

12. The method of claim 11 , wherein placing the mold material over the interconnect array further comprises laminating the mold material under vacuum conditions.

13. The method of claim 7 , wherein the notch formed ends in the transparent layer.

14. The method of claim 7 , wherein the interconnect array comprises one of a ball grid array, a land grid array, a pin grid array, a pillar grid array, and any combination thereof.

15. A method of forming a chip scale package comprising:

providing a wafer comprising a first side and a second side, the wafer comprising a plurality of image sensors;

coupling the first side of a wafer to a first side of a plurality of cavity walls;

coupling a transparent layer to a second side of the plurality of cavity walls;

coupling a redistribution layer (RDL) to the second side of the wafer;

forming an interconnect array on the RDL;

forming a plurality of notches between each image sensor, wherein the plurality of notches extends from the image sensor into the transparent layer;

placing a mold material over the interconnect array;

laminating the mold material to press the interconnect array through the mold material to encapsulate a portion of the RDL;

laminating the mold material into each notch of the plurality of notches, wherein the mold material directly covers a plurality of interfaces between the transparent layer and the plurality of cavity walls; and

singulating each image sensor at each notch of the plurality of notches to form a plurality of chip scale packages.

16. The method of claim 15 , wherein singulating further comprises forming a layer of the mold material that extends into a groove of the transparent layer.

17. The method of claim 15 , wherein filing the plurality of notches with the mold material further comprises extending the mold material along a portion of the RDL, a side of each cavity wall of the plurality of cavity walls, and a portion of the transparent layer.

18. The method of claim 15 , wherein the mold material is laminated at a temperature between 30-100 degrees Celsius and a pressure between 0-50 MPa.

19. The method of claim 15 , wherein the interconnect array comprises one of a ball grid array, a land grid array, a pin grid array, a pillar grid array, and any combination thereof.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 04481, FRAME 0541 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064072/0459 →
PATENT SECURITY AGREEMENT Recorded Nov 17, 2017
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 044481/0541 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 13, 2017
From: WU, WENG-JIN
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 040974/0311 →