Packaged semiconductor devices with laser grooved wettable flank and methods of manufacture
View Patent ↗In a general aspect, a packaged semiconductor device can include a semiconductor device and a metal leadframe structure having a signal lead that is electrically coupled with the semiconductor device. The device can also include a molding compound encapsulating at least a portion of the metal leadframe structure. At least a portion of the signal lead can be exposed outside the molding compound. The device can further include a solder plating disposed on exposed portions of the metal leadframe structure. In the device, a flank of the signal lead can have a surface area. At first portion of the surface area of the flank can be defined by the solder plating, and a second portion of the surface area of the flank can be defined by exposed metal of the metal leadframe structure. A perimeter of a surface of the exposed metal can have at least one curved edge.
1. An apparatus comprising:
a semiconductor device;
a metal leadframe structure having a signal lead that is electrically coupled with the semiconductor device;
a molding compound encapsulating at least a portion of the semiconductor device and at least a portion of the metal leadframe structure, at least a portion of the signal lead being exposed outside the molding compound, the molding compound defining a primary plane of the apparatus; and
a solder plating disposed on exposed portions of the metal leadframe structure,
a flank of the signal lead having a surface area, a first portion of the surface area of the flank of the signal lead being defined by the solder plating, and a second portion of the surface area of the flank of the signal lead being defined by exposed metal of the metal leadframe structure,
the second portion of the surface area of the flank of the signal lead being disposed on the flank of the signal lead and within the first portion of the surface area of the flank of the signal lead, and
a center portion of the exposed metal of the second portion of the surface area of the flank of the signal lead having a height along an axis that is approximately orthogonal with the primary plane of the apparatus, the height of the center portion being greater than a height, along the axis that is approximately orthogonal with the primary plane of the apparatus, of a portion of the exposed metal of the second portion of the surface area of the flank of the signal lead that is laterally disposed from the center portion.
2. The apparatus of claim 1 , wherein a perimeter of the exposed metal of the second portion of the surface area of the flank of the signal lead has at least one curved edge.
3. The apparatus of claim 1 , wherein a perimeter of the exposed metal of the second portion of the surface area of the flank of the signal lead is semicircle shaped.
4. The apparatus of claim 1 , wherein the exposed metal of the second portion of the surface area of the flank of the signal lead is surrounded by the solder plating of the first portion of the surface area of the flank of the signal lead.
5. An apparatus comprising:
a semiconductor device;
a metal leadframe structure having a signal lead that is electrically coupled with the semiconductor device;
a molding compound encapsulating at least a portion of the semiconductor device and at least a portion of the metal leadframe structure, at least a portion of the signal lead being exposed outside the molding compound; and
a solder plating disposed on exposed portions of the metal leadframe structure,
a flank of the signal lead having a surface area, at least 75% of the surface area of the flank of the signal lead being defined by the solder plating, and 25% or less of the surface area of the flank of the signal lead being defined by exposed metal of the metal leadframe structure, a perimeter of a surface of the exposed metal having at least one curved edge, the 25% or less of the surface area of the flank of the signal lead being defined by exposed metal of the metal leadframe structure being disposed on the flank of the signal lead and within the at least 75% of the surface area of the flank of the signal lead being defined by the solder plating.
6. The apparatus of claim 5 , wherein the flank of the signal lead is disposed at an end of the signal lead, the surface area of the flank having a first portion and a second portion, the first portion being defined by a laser groove, the second portion being defined by a cleave in the metal leadframe structure, the surface of the exposed metal being included in the second portion.
7. The apparatus of claim 5 , wherein the flank of the signal lead is disposed at an end of the signal lead, the surface area of the flank having a first portion and a second portion, the first portion being defined by a laser groove, the second portion being defined by a saw cut in the metal leadframe structure, the surface of the exposed metal being included in the second portion.
8. The apparatus of claim 5 , wherein the molding compound defines a primary plane of the apparatus, a center portion of a cross-sectional profile of the surface of the exposed metal having a height along an axis that is approximately orthogonal to the primary plane of the apparatus, the height of the center portion being greater than a height of a portion of the cross-sectional profile of the surface of the exposed metal that is laterally disposed from the center portion.
9. The apparatus of claim 5 , wherein the perimeter of the surface of the exposed metal is crescent shaped.
10. The apparatus of claim 5 , wherein the perimeter of the surface of the exposed metal is semicircle shaped.
11. The apparatus of claim 5 , wherein the portion of the signal lead that is exposed outside the molding compound extends away from a surface of the molding compound, such that the flank of the signal lead is spaced a distance from the surface of the molding compound.
12. The apparatus of claim 5 , wherein the flank of the signal lead is substantially coplanar with a surface of the molding compound.
13. An apparatus comprising:
a semiconductor device;
a metal leadframe structure having a signal lead that is electrically coupled with the semiconductor device;
a molding compound encapsulating at least a portion of the semiconductor device and at least a portion of the metal leadframe structure, at least a portion of the signal lead being exposed outside the molding compound; and
a solder plating disposed on exposed portions of the metal leadframe structure,
a flank of the signal lead having a surface area, at least 75% of the surface area of the flank of the signal lead being defined by the solder plating, and 25% or less of the surface area of the flank of the signal lead being defined by exposed metal of the metal leadframe structure, the surface area of the flank being a discontinuous surface area, a perimeter of a surface of the exposed metal being crescent shaped or semicircular shaped, a center portion of the surface of the exposed metal having a height along an axis that is approximately orthogonal with a primary plane of the apparatus, the primary plane of the apparatus being defined by the molding compound, the height of the center portion being greater than a height, along the axis that is approximately orthogonal with the primary plane of the apparatus, of a portion of the surface of the exposed metal that is laterally disposed from the center portion of the surface of the exposed metal.
14. The apparatus of claim 13 , wherein the flank of the signal lead is disposed at an end of the signal lead, the discontinuous surface area of the flank including a first portion and a second portion, the first portion being defined by a laser groove, the second portion being defined by a cleave in the metal leadframe structure, the surface of the exposed metal being included in the second portion.
15. The apparatus of claim 14 , the discontinuous surface area of the flank further including a third portion disposed between the first portion of the discontinuous surface area of the flank and the second portion of the discontinuous surface area of the flank.
16. The apparatus of claim 13 , wherein the flank of the signal lead is disposed at an end of the signal lead, the discontinuous surface area of the flank having a first portion and a second portion, the first portion being defined by a laser groove, the second portion being defined by a saw cut in the metal leadframe structure, the surface of the exposed metal being included in the second portion.
17. The apparatus of claim 16 , the discontinuous surface area of the flank further including a third portion disposed between the first portion of the discontinuous surface area of the flank and the second portion of the discontinuous surface area of the flank.
18. The apparatus of claim 13 , wherein the portion of the signal lead that is exposed outside the molding compound extends away from a surface of the molding compound, such that the flank of the signal lead is spaced a distance from the surface of the molding compound.
19. The apparatus of claim 13 , wherein the flank of the signal lead is substantially coplanar with a surface of the molding compound.
20. The apparatus of claim 13 , wherein the surface of the exposed metal is surrounded by the solder plating.