MICROFABRICATED OPTICAL APPARATUS

1 . A microfabricated optical apparatus fabricated on a silicon substrate, comprising:

a light source driven by a signal and disposed on the silicon substrate, wherein the light source generates optical radiation;

wherein the signal is delivered to the light source by at least one through silicon via (TSV) which extends through a thickness of the silicon substrate.

2 . The microfabricated optical apparatus of claim 1 , further comprising a lid wafer with a device cavity formed therein, wherein the device cavity encapsulates the optical apparatus.

3 . The microfabricated optical apparatus of claim 2 , wherein the signal is a direct current electrical signal which is applied to the through silicon via.

4 . The microfabricated optical apparatus of claim 1 , further comprising: a device which modulates at least one of a frequency and an amplitude, to encode the optical radiation emitted from the light source with an information signal.

5 . The microfabricated optical apparatus of claim 2 , further comprising a Faraday rotator also disposed within the device cavity.

6 . The microfabricated optical apparatus of claim 1 , wherein the light source is at least one of a light emitting diode, a laser diode, an edge emitting laser diode, a laser diode, and a vertical cavity surface emitting laser.

7 . The microfabricated optical apparatus of claim 2 , wherein the optical radiation exits the device cavity through a roof of the lid wafer, in a substantially parallel direction relative to the through silicon via.

8 . The microfabricated optical apparatus of claim 2 , wherein the optical radiation exits the device cavity through the substrate, in a substantially parallel direction relative to the through silicon via.

9 . The microfabricated optical apparatus of claim 2 , wherein the optical radiation exits the device cavity through a sidewall of the device cavity, in a direction substantially orthogonal to the through silicon via.

10 . The microfabricated optical apparatus of claim 2 , wherein the device cavity encapsulates a plurality of light sources.

11 . The microfabricated optical apparatus of claim 2 , further comprising a beam shaping a lens formed in a roof of the device cavity and from material of the lid wafer.

12 . The microfabricated optical apparatus of claim 2 , further comprising a reflective film deposited on a sidewall of the device cavity, wherein the sidewall is inclined with respect to a surface of the substrate by about 50 to 60 degrees.

13 . The microfabricated optical apparatus of claim 1 , further comprising a reflective film deposited on an inclined surface of an optical element located within the device cavity.

14 . A method for microfabricating an optical apparatus on a silicon substrate, comprising:

forming a device cavity in a lid wafer;

forming a through silicon via through the silicon substrate;

disposing a light source driven by a waveform which generates optical radiation on the silicon substrate, and coupling the light source electrically to the through silicon via;

disposing a beam shaping element on the silicon substrate;

disposing a turning surface which redirects the beam of light; and

bonding the substrate to the lid wafer to encapsulate the optical apparatus in a substantially hermetic device cavity.

15 . The method of claim 14 , wherein forming the through silicon via comprises:

etching a blind trench into a front side of the substrate leaving residual substrate material;

coating the trench with an insulating material;

depositing a conductive material in the blind trench; and

removing the residual substrate material from a backside of the substrate to form the via.

16 . The method of claim 14 , wherein bonding the silicon substrate to the lid wafer comprises bonding the silicon substrate to the lid wafer with a low temperature metal alloy bond.

17 . The method of claim 14 , further comprising:

forming a lens in a roof of the device cavity, on an outside surface.

18 . The method of claim 14 , further comprising:

forming a lens in a roof of the device cavity, on an inside surface.

19 . The method of claim 14 , wherein forming the device cavity comprises

forming the device cavity with anisotropic etching, leaving inclined sidewalls in the device cavity inclined at angles of about 50 to 60 degrees with respect to a surface of the lid wafer.

20 . The method of claim 19 , further comprising:

depositing a reflective surface onto at least one inclined sidewall of the device cavity.