Systems and methods for scalable perovskite device fabrication
Continuous processes for fabricating a perovskite device are described that include forming a perovskite layer or film on a substrate using a linear deposition device, and optionally using a conductive tape lamination process to form an anode or a cathode layer on the perovskite device.
1. A process for fabricating a perovskite device, comprising:
receiving a substrate;
forming a perovskite film on the substrate using a linear deposition device that deposits and evenly distributes a perovskite precursor solution onto the substrate, wherein the precursor solution includes a lead halide and at least one of a methylammonium halide or a formamidinium halide dissolved in dimethylformamide (DMF) or Methyl sulfoxide (DMSO).
2. The process of claim 1 , further comprising:
heating the substrate while forming the perovskite film.
3. The process of claim 1 , wherein the substrate is moving and the linear deposition device is stationary.
4. The process of claim 1 , wherein the substrate is moving at a rate of about 0.75 to about 75 cm/sec relative to the linear deposition device.
5. The process of claim 1 , wherein the substrate is stationary and wherein the linear deposition device moves relative to the substrate.
6. The process of claim 1 , wherein the forming the perovskite film includes dispensing between about 10 μL and about 20 μL of perovskite precursor solution for every 2.25 mm 2 of substrate.
7. The process of claim 1 , wherein the substrate comprises indium tin oxide (ITO) or other transparent conductive electrode material.
8. The process of claim 1 , wherein the perovskite film on the substrate comprises a perovskite device, the method further including:
heating the perovskite device; and
applying a conductive material onto the perovskite device.
9. The process of claim 1 , wherein the linear deposition device comprises a doctor blade.
10. The process of claim 2 , wherein the heating the substrate includes heating the substrate to a temperature in a range of between about 50° C. and about 180° C.
11. The process of claim 10 , wherein the heating the substrate includes heating the substrate to about 125° C.
12. A process for fabricating a perovskite device, comprising:
receiving a substrate;
forming a perovskite film on the substrate using a linear deposition device that deposits and evenly distributes a perovskite precursor solution onto the substrate, wherein the perovskite film on the substrate comprises a perovskite device, the method further including:
heating the perovskite device; and
applying a conductive material onto the perovskite device, and wherein the applying includes rolling a conductive tape onto the perovskite device, wherein the conductive tape includes an adhesive material and the conductive material.
13. The process of claim 8 , wherein heating the perovskite device includes heating the perovskite device to a temperature between about 50° C. and about 175° C.
14. A process for fabricating a perovskite device, comprising:
receiving a substrate;
forming a perovskite film on the substrate using a linear deposition device that deposits and evenly distributes a perovskite precursor solution onto the substrate, wherein the linear deposition device comprises a doctor blade, and wherein the forming includes:
applying the perovskite precursor solution onto the substrate; and then
linearly swiping the perovskite precursor solution using the doctor blade to form the perovskite film on the substrate.
15. A process for continuously laminating a perovskite device, comprising:
forming a perovskite device having a perovskite film on a substrate by forming the perovskite film on the substrate using a linear deposition device that deposits and evenly distributes a perovskite precursor solution onto the substrate;
heating the perovskite device; and
applying a conductive material onto the perovskite device, wherein the applying includes rolling a conductive tape onto the perovskite device, wherein the conductive tape includes an adhesive material and the conductive material.
16. The process of claim 15 , wherein heating the perovskite device includes heating the perovskite device to a temperature between about 50° C. and about 175° C.
17. The process of claim 15 , wherein the substrate comprises indium tin oxide (ITO) or other transparent conductive electrode material, and wherein the conductive material includes at least one of aluminum, copper, nickel, gold, or silver.
18. The process of claim 15 , wherein the linear deposition device comprises a doctor blade.
19. A process for fabricating a perovskite device, comprising:
receiving a substrate; and
linearly depositing a perovskite solution onto the substrate to form a perovskite film, wherein the perovskite solution includes a lead halide and at least one of a methylammonium halide or a formamidinium halide dissolved in dimethylformamide (DMF) or Methyl sulfoxide (DMSO).
20. The process of claim 19 , further comprising:
heating the substrate while linearly depositing the perovskite solution.
21. The process of claim 19 , further comprising applying a conductive material onto the perovskite device.