IP Library › Granted Patent US 10,680,576
Granted Patent B2
US 10,680,576 · App. 15/417,725 · Granted Jun 9, 2020

Piezoelectric thin film resonator, filter, and duplexer

Inventors: Tsuyoshi Yokoyama (Tokyo, JP); Jiansong Liu (Tokyo, JP)
Assignee: TAIYO YUDEN CO., LTD.
H03H9/02015H03H9/02118H03H9/171H03H9/52H03H9/54H03H9/706
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Quick Facts
Patent No.
US 10,680,576
App. No.
15/417,725
Granted
Jun 9, 2020
Kind
B2
Abstract

A piezoelectric thin film resonator includes: a substrate; a lower electrode located on the substrate; a piezoelectric film that has a step on an upper surface thereof and is located on the lower electrode, a film thickness of the piezoelectric film inside the step being greater than a film thickness of the piezoelectric film outside the step; an upper electrode located on the piezoelectric film so that a resonance region is formed, the lower electrode and the upper electrode facing each other across the piezoelectric film in the resonance region, the resonance region including the step in plan view; and an insertion film located in the piezoelectric film, between the piezoelectric film and the lower electrode, or between the piezoelectric film and the upper electrode in at least a part of an outer peripheral region within the resonance region, and not located in a central region of the resonance region.

Claims (47)

1. A piezoelectric thin film resonator comprising:

a substrate;

a lower electrode located on the substrate;

a piezoelectric film that has a step on an upper surface thereof and is located on the lower electrode, a film thickness of the piezoelectric film inside the step being greater than a film thickness of the piezoelectric film outside the step;

an upper electrode that is located on the piezoelectric film so that a resonance region is formed, the lower electrode and the upper electrode facing each other across the piezoelectric film in the resonance region, the resonance region including the step in plan view; and

an insertion film that is located in the piezoelectric film, or between the piezoelectric film and the lower electrode in at least a part of a thin film region located further out than the step in plan view within the resonance region, and is not located in a thick film region located further in than the step in plan view within the resonance region,

wherein a side surface of the step is slanted, and

wherein a thickness of the insertion film is smaller than a difference between a thickness of the piezoelectric film in the thick film region and a thickness of the piezoelectric film in the thin film region.

2. The piezoelectric thin film resonator according to claim 1 , wherein

the insertion film does not overlap with the step in plan view.

3. The piezoelectric thin film resonator according to claim 1 , wherein

the upper electrode makes contact with a side surface of the step.

4. The piezoelectric thin film resonator according to claim 1 , wherein

the piezoelectric film in the thin film region includes a lower piezoelectric film and an upper piezoelectric film, and

the insertion film is located between the lower piezoelectric film and the upper piezoelectric film.

5. The piezoelectric thin film resonator according to claim 1 , wherein

the insertion film has an acoustic impedance less than an acoustic impedance of the piezoelectric film.

6. The piezoelectric thin film resonator according to claim 1 , wherein

an air layer is located under the lower electrode in the resonance region.

7. The piezoelectric thin film resonator according to claim 1 , wherein

an acoustic mirror configured to reflect an acoustic wave propagating through the piezoelectric film is located under the lower electrode in the resonance region.

8. A piezoelectric thin film resonator comprising:

a substrate;

a lower electrode located on the substrate;

a piezoelectric film that has a step on an upper surface thereof and is located on the lower electrode, a film thickness of the piezoelectric film inside the step being greater than a film thickness of the piezoelectric film outside the step;

an upper electrode that is located on the piezoelectric film so that a resonance region is formed, the lower electrode and the upper electrode facing each other across the piezoelectric film in the resonance region, the resonance region including the step in plan view; and

an insertion film that is located between the piezoelectric film and the upper electrode in at least a part of a thin film region located further out than the step in plan view within the resonance region, and is not located in a thick film region located further in than the step in plan view within the resonance region,

wherein a thickness of the insertion film is smaller than a difference between a thickness of the piezoelectric film in the thick film region and a thickness of the piezoelectric film in the thin film region.

9. The piezoelectric thin film resonator according to claim 8 , wherein

the insertion film makes contact with a side surface of the step, and the upper electrode is located beside the side surface of the step.

10. The piezoelectric thin film resonator according to claim 8 , wherein a side surface of the step is slanted.

11. The piezoelectric thin film resonator according to claim 10 , wherein the insertion film does not overlap with the step in plan view.

12. A filter comprising:

the piezoelectric thin film resonator according to claim 8 .

13. A duplexer comprising:

the filter according to claim 12 .

14. A filter comprising:

a piezoelectric thin film resonator including:

a substrate;

a lower electrode located on the substrate;

a piezoelectric film that has a step on an upper surface thereof and is located on the lower electrode, a film thickness of the piezoelectric film inside the step being greater than a film thickness of the piezoelectric film outside the step;

an upper electrode that is located on the piezoelectric film so that a resonance region is formed, the lower electrode and the upper electrode facing each other across the piezoelectric film in the resonance region, the resonance region including the step in plan view; and

an insertion film that is located in the piezoelectric film, or between the piezoelectric film and the lower electrode in at least a part of a thin film region located further out than the step in plan view within the resonance region, and is not located in a thick film region located further in than the step in plan view within the resonance region,

wherein a side surface of the step is slanted, and

wherein a thickness of the insertion film is smaller than a difference between a thickness of the piezoelectric film in the thick film region and a thickness of the piezoelectric film in the thin film region.

15. A duplexer comprising:

the filter according to claim 14 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 27, 2017
From: YOKOYAMA, TSUYOSHI; LIU, JIANSONG
To: TAIYO YUDEN CO., LTD.
Reel/Frame 041540/0240 →
Priority Claims (1)
JP 2016-020952 · Feb 5, 2016 · national
Continuity (1)
Related Publication 20170230031A1 · Aug 10, 2017