In-memory data storage with adaptive memory fault tolerance
A storage aware memory controller for managing a physical storage system. A described controller: a system for mapping physical memory space into a memory region and a storage region; a system for applying different error protections schemes, in which a fine-grained memory fault tolerance scheme is applied to data in the memory region and a course-grained memory fault tolerance scheme is applied to data in the storage region; and a storage file system that includes a mapping table for mapping logical addresses to physical addresses for data stored in the storage region.
1. A storage aware memory controller for in-memory data processing, comprising:
a system for mapping physical memory space into a memory region and a storage region;
a system for applying different error protections schemes, in which a fine-grained memory fault tolerance scheme is applied to data in the memory region and a course-grained memory fault tolerance scheme is applied to data in the storage region; and
a storage file system that includes a mapping table for mapping logical addresses to physical addresses for data stored in the storage region;
wherein the storage region includes a first partition for 1-bit/cell data storage and a second partition for m-bit/cell data storage, wherein m is greater than 1.
2. The storage aware memory controller of claim 1 , wherein the m-bit/cell data storage partition utilizes a course grained memory fault tolerance scheme that is relatively stronger than that used for 1-bit/cell data storage.
3. The storage aware memory controller of claim 2 , wherein the storage file system includes a first mapping table for mapping data in the 1-bit/cell data storage partition to a physical address and a second mapping table for mapping data in the m-bit/cell data storage partition to a physical address.
4. The storage aware memory controller of claim 1 , wherein the mapping table utilizes a logical address that includes a virtual block ID and block index.
5. The storage aware memory controller of claim 1 , further comprising logic for moving data between and among the memory region, 1-bit/cell data storage partition, and m-bit/cell data storage partition.
6. The storage aware memory controller of claim 1 , wherein the fine-grained memory fault tolerance scheme provides access patterns of 8-16 bytes, and the course-grained memory fault tolerance scheme provides access patterns of 512-4096 bytes.
7. A memory system comprising:
a set of memory chips that form a physical memory; and
a storage aware memory controller for in-memory data processing, wherein the storage aware memory controller includes:
a system for mapping the physical memory into a memory region and a storage region;
a system for applying different error protections schemes, in which a fine-grained memory fault tolerance scheme is applied to data in the memory region and a course-grained memory fault tolerance scheme is applied to data in the storage region; and
a storage filesystem that includes a mapping table for mapping logical addresses to physical addresses for data stored in the storage region;
wherein the storage region includes a first partition for 1-bit/cell data storage and a second partition for m-bit/cell data storage, wherein m is greater than 1.
8. The memory system of claim 7 , wherein the m-bit/cell data storage partition utilizes a course grained memory fault tolerance scheme that is relatively stronger than that used for 1-bit/cell data storage.
9. The memory system of claim 8 , wherein the storage filesystem includes a first mapping table for mapping data in the 1-bit/cell data storage partition to a physical address and a second mapping table for mapping data in the m-bit/cell data storage partition to a physical address.
10. The memory system of claim 7 , wherein the mapping table utilizes a logical address that includes a virtual block ID and block index.
11. The memory system of claim 7 , further comprising logic for moving data between and among the memory region, 1-bit/cell data storage partition, and m-bit/cell data storage partition.
12. The memory system of claim 7 , wherein the fine-grained memory fault tolerance scheme provides access patterns of 8-16 bytes, and the course-grained memory fault tolerance scheme provides access patterns of 512-4096 bytes.
13. Computer programming logic stored in a computer readable storage medium, which when executed by a processing core, provides storage aware memory control for in-memory data processing, and comprises:
program logic for mapping physical memory space into a memory region and a storage region;
program logic for applying different error protections schemes, in which a fine-grained memory fault tolerance scheme is applied to data in the memory region and a course-grained memory fault tolerance scheme is applied to data in the storage region; and
program logic that implements a mapping table for mapping logical addresses to physical addresses for data stored in the storage region;
wherein the storage region includes a first partition for 1-bit/cell data storage and a second partition for m-bit/cell data storage, wherein m is greater than 1.
14. The computer programming logic of claim 13 , wherein the m-bit/cell data storage partition utilizes a course grained memory fault tolerance scheme that is relatively stronger than that used for 1-bit/cell data storage.
15. The computer programming logic of claim 13 , wherein the mapping table includes a first mapping table for mapping data in the 1-bit/cell data storage partition to a physical address and a second mapping table for mapping data in the m-bit/cell data storage partition to a physical address.
16. The computer programming logic of claim 13 , wherein the mapping table utilizes a logical address that includes a virtual block ID and block index.
17. The computer programming logic of claim 13 , further comprising program logic for moving data between and among the memory region, 1-bit/cell data storage partition, and m-bit/cell data storage partition.