Asymmetric pass field-effect transistor for nonvolatile memory

1. A memory device, comprising:

a first non-volatile memory (NVM) cell including a first memory transistor and a first pass transistor;

a second non-volatile memory (NVM) cell including a second memory transistor and a second pass transistor; and

a common source line (CSL) coupled with at least a source of one of the first and second pass transistors,

wherein at least one of the first and second pass transistors is an asymmetric transistor.

2. The memory device of claim 1 , wherein the asymmetric transistor includes a source and a drain having different doped regions.

3. The memory device of claim 1 , wherein the source of at least one of the first and second pass transistors includes a halo implant.

4. The memory device of claim 1 , wherein a drain of at least one of the first and second pass transistors includes a halo implant.

5. The memory device of claim 1 , wherein both the source and a drain of at least one of the first and second pass transistors include a halo implant, wherein the halo implant of the source of the at least one of the first and second pass transistors is different from the halo implant of the drain.

6. The memory device of claim 4 wherein the halo implant surrounds at least a portion of the source of the at least one of the first and second pass transistors.

7. The memory device of claim 5 , wherein the halo implants of the source and drain of the at least one of the first and second pass transistors comprises a dopant of a same conductivity type.

8. The memory device of claim 7 , wherein an implant dose of the dopant in the halo implant of the source of the at least one of the first and second pass transistors is greater than the halo implant of the drain.

9. The memory device of claim 1 , wherein the first and second memory transistors are charge trapping transistors.

10. The memory device of claim 4 wherein the halo implant is a high-tilt halo implant.

11. A method comprising:

performing an operation on a non-volatile memory (NVM) cell of a memory device, wherein a pass transistor of the NVM cell is an asymmetric transistor, wherein a source of the pass transistor is coupled to a common source line (CSL) that is shared among NVM cells of a sector of NVM cells, and wherein the operation comprises:

applying a first signal to a word line (WLS) coupled to a gate of a memory transistor of the NVM cell; and

applying a second signal to a bit line (BL) coupled to a drain of the memory transistor of the NVM cell.

12. The method of 11 , wherein the asymmetric transistor includes a source and a drain having different doped regions.

13. The method of 11 , wherein the asymmetric transistor includes the source including a halo implant.

14. The method of claim 11 , wherein the operation is a programming operation to program the NVM cell, wherein the operation further comprises:

applying the second signal to a well line (SPW) coupled to a well of the memory transistor and a well of the pass transistor, wherein the first signal and the second signal form a positive voltage potential between the gate and the drain of the memory transistor and between the gate and the well of the memory transistor.

15. The method of claim 11 , wherein the operation is a programming operation to program the NVM cell, wherein the operation further comprises:

applying the second signal to a word line (WL) coupled to a gate of the pass transistor; and

applying a third signal to the common source line (CSL) coupled to the source of the pass transistor, wherein the second signal and the first signal form a voltage potential between the gate and the source of the pass transistor that is below a threshold voltage of the pass transistor.

16. The method of claim 11 , wherein the operation is an erase operation to erase the NVM cell, wherein the operation further comprises:

applying the second signal to a well line (SPW) coupled to a well of the memory transistor and a well of the pass transistor, wherein the first signal and the second signal form a negative voltage potential between the gate and the drain of the memory transistor and between the gate and the well of the memory transistor.

17. The method of claim 11 , wherein the operation is a read operation to read the NVM cell, wherein the operation further comprises:

applying a fourth signal to a word line (WL) coupled to a gate of the pass transistor; and

applying a fifth signal to the CSL coupled the source of the pass transistor, wherein the fourth signal and the fifth signal form a positive voltage potential between the gate and the source of the pass transistor.

18. A system, comprising:

a non-volatile memory (NVM) array comprising a plurality of NVM cells, wherein an NVM cell of the plurality of NVM cells comprises,

a memory transistor,

a pass transistor coupled to the memory transistor, wherein the pass transistor of the NVM cell is an asymmetric transistor, and

a common source line (CSL) coupled to the source of the pass transistor, wherein the CSL is shared among NVM cells of a sector of NVM cells of the NVM array; and

voltage control circuitry configured to generate and control voltage signals for operation of the NVM array, wherein the voltage signals include high voltage signals and low voltage signals for pre-program, erase, program, and read operations.

19. The system of claim 18 , wherein the asymmetric transistor includes one of a source or a drain that has a halo implant.

20. The system of claim 19 , wherein the asymmetric transistor includes the source having the halo implant.