METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A semiconductor device manufacturing method includes forming a film having a desired composition on a substrate by selectively performing at least one of: performing, n 1 times, a cycle including processes of sequentially supplying a first precursor gas, a nitriding gas and an oxidizing gas to the substrate; performing, n 2 times, a cycle including processes of sequentially supplying the first precursor gas, the oxidizing gas and the nitriding gas to the substrate; performing, n 3 times, a cycle including processes of sequentially supplying a second precursor gas containing a chemical bond of a predetermined element and carbon, which is more than that contained in the first precursor gas, the nitriding gas and the oxidizing gas to the substrate; and performing, n 4 times, a cycle including processes of sequentially supplying the second precursor gas, the oxidizing gas and the nitriding gas to the substrate.
1 . A method of manufacturing a semiconductor device, comprising:
forming a film having a desired composition on a substrate by selectively performing at least one of:
(a) performing a cycle, n 1 times (n 1 being an integer of one or more), the cycle including performing in the following order: supplying a first precursor gas containing a chemical bond of a predetermined element and carbon to the substrate, supplying a nitriding gas to the substrate, and supplying an oxidizing gas to the substrate;
(b) performing a cycle, n 2 times (n 2 being an integer of one or more), the cycle including performing in the following order: supplying the first precursor gas to the substrate, supplying an oxidizing gas to the substrate, and supplying a nitriding gas to the substrate;
(c) performing a cycle, n 3 times (n 3 being an integer of one or more), the cycle including performing in the following order: supplying a second precursor gas containing a chemical bond of the predetermined element and carbon, which is more than the chemical bond of the predetermined element and carbon contained in the first precursor gas, to the substrate, supplying a nitriding gas to the substrate, and supplying an oxidizing gas to the substrate; and
(d) performing a cycle, n 4 times (n 4 being an integer of one or more), the cycle including performing in the following order: supplying the second precursor gas to the substrate, supplying an oxidizing gas to the substrate, and supplying a nitriding gas to the substrate.
2 . The method of claim 1 , comprising:
forming a laminated film, which is obtained by alternately laminating films in which at least one of a concentration of carbon and a concentration of nitrogen is different from each other, by selecting at least two of the acts (a), (b), (c) and (d) and alternately performing the selected at least two acts, n 5 times (n 5 being an integer of one or more).
3 . The method of claim 2 , comprising:
forming an outermost surface of the laminated film as a film having the concentration of carbon not lower than the concentration of nitrogen by finally performing the act (a).
4 . The method of claim 2 , comprising:
forming an outermost surface of the laminated film as a film having the concentration of carbon lower than the concentration of nitrogen by finally performing the act (b).
5 . The method of claim 2 , comprising:
forming an outermost surface of the laminated film as a film having the concentration of carbon higher than the concentration of nitrogen by finally performing the act (c).
6 . The method of claim 2 , comprising:
forming an outermost surface of the laminated film as a film having the concentration of carbon not higher than the concentration of nitrogen by finally performing the act (d).
7 . The method of claim 2 , wherein the laminated film is formed by a film having the concentration of carbon not lower than the concentration of nitrogen and a film having the concentration of carbon lower than the concentration of nitrogen by alternately performing the acts (a) and (b).
8 . The method of claim 2 , wherein the laminated film is formed by a film having the concentration of carbon not lower than the concentration of nitrogen and a film having the concentration of carbon higher than the concentration of nitrogen by alternately performing the acts (a) and (c).
9 . The method of claim 2 , wherein the laminated film is formed by a film having the concentration of carbon not lower than the concentration of nitrogen and a film having the concentration of carbon not higher than the concentration of nitrogen by alternately performing the acts (a) and (d).
10 . The method of claim 2 , wherein the laminated film is formed by a film having the concentration of carbon lower than the concentration of nitrogen and a film having the concentration of carbon higher than the concentration of nitrogen by alternately performing the acts (b) and (c).
11 . The method of claim 2 , wherein the laminated film is formed by a film having the concentration of carbon lower than the concentration of nitrogen and a film having the concentration of carbon not higher than the concentration of nitrogen by alternately performing the acts (b) and (d).
12 . The method of claim 2 , wherein the laminated film is formed by a film having the concentration of carbon higher than the concentration of nitrogen and a film having the concentration of carbon not higher than the concentration of nitrogen by alternately performing the acts (c) and (d).
13 . The method of claim 1 , wherein a film having a concentration of carbon not lower than a concentration of nitrogen is formed by selectively performing the act (a).
14 . The method of claim 1 , wherein a film having a concentration of carbon lower than a concentration of nitrogen is formed by selectively performing the act (b).
15 . The method of claim 1 , wherein a film having a concentration of carbon higher than a concentration of nitrogen is formed by selectively performing the act (c).
16 . The method of claim 1 , wherein a film having a concentration of carbon not higher than a concentration of nitrogen is formed by selectively performing the act (d).
17 . The method of claim 1 , further comprising:
providing a program for executing a procedure of the act (a), a program for executing a procedure of the act (b), a program for executing a procedure of the act (c), and a program for executing a procedure of the act (d); and
selectively executing at least one of the programs.
18 . The method of claim 1 , wherein each of the first precursor gas and the second precursor gas contains carbon-containing ligands, and the number of the carbon-containing ligands contained in the second precursor gas is larger than the number of the carbon-containing ligands contained in the first precursor gas.
19 . A substrate processing apparatus, comprising:
a process chamber in which a substrate is accommodated;
a precursor gas supply system configured to supply a first precursor gas containing a chemical bond of a predetermined element and carbon, or a second precursor gas containing a chemical bond of the predetermined element and carbon which is more than the chemical bond of the predetermined element and carbon contained in the first precursor gas, to the substrate in the process chamber;
a nitriding gas supply system configured to supply a nitriding gas to the substrate in the process chamber;
an oxidizing gas supply system configured to supply an oxidizing gas to the substrate in the process chamber; and
a control part configured to control the precursor gas supply system, the nitriding gas supply system and the oxidizing gas supply system so as to form a film having a desired composition on the substrate by selectively performing at least one of:
(a) performing a cycle, n 1 times (n 1 being an integer of one or more), the cycle including performing in the following order: supplying the first precursor gas to the substrate, supplying the nitriding gas to the substrate, and supplying the oxidizing gas to the substrate;
(b) performing a cycle, n 2 times (n 2 being an integer of one or more), the cycle including performing in the following order: supplying the first precursor gas to the substrate, supplying the oxidizing gas to the substrate, and supplying the nitriding gas to the substrate;
(c) performing a cycle, n 3 times (n 3 being an integer of one or more), the cycle including performing in the following order: supplying the second precursor gas to the substrate, supplying the nitriding gas to the substrate, and supplying the oxidizing gas to the substrate; and
(d) performing a cycle, n 4 times (n 4 being an integer of one or more), the cycle including performing in the following order: supplying the second precursor gas to the substrate, supplying the oxidizing gas to the substrate, and supplying the nitriding gas to the substrate.
20 . A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a film having a desired composition on a substrate by selectively performing at least one of:
(a) performing a cycle, n 1 times (n 1 being an integer of one or more), the cycle including performing in the following order: supplying a first precursor gas containing a chemical bond of a predetermined element and carbon to the substrate, supplying a nitriding gas to the substrate, and supplying an oxidizing gas to the substrate;
(b) performing a cycle, n 2 times (n 2 being an integer of one or more), the cycle including performing in the following order: supplying the first precursor gas to the substrate, supplying an oxidizing gas to the substrate, and supplying a nitriding gas to the substrate;
(c) performing a cycle, n 3 times (n 3 being an integer of one or more), the cycle including performing in the following order: supplying a second precursor gas containing a chemical bond of the predetermined element and carbon, which is more than the chemical bond of the predetermined element and carbon contained in the first precursor gas, to the substrate, supplying a nitriding gas to the substrate, and supplying an oxidizing gas to the substrate; and
(d) performing a cycle, n 4 times (n 4 being an integer of one or more), the cycle including performing in the following order: supplying the second precursor gas to the substrate, supplying an oxidizing gas to the substrate, and supplying a nitriding gas to the substrate.