Semiconductor structure and method for forming the same

1. A semiconductor structure, comprising:

a substrate;

a semiconductor layer formed on the substrate;

an isolation structure through the semiconductor layer, wherein the isolation structure has an opening with a first width, and the isolation structure has a vacuum gap, and a dielectric layer extending from one end to an opposite end of the isolation structure;

a contact plug structure through the semiconductor layer, wherein the contact plug structure has an opening with a second width, and the second width is greater than the first width; and

an oxide layer formed between the substrate and the semiconductor layer, wherein the contact plug structure passes through the oxide layer, such that the contact plug structure is in direct contact with the substrate, wherein a sidewall of the contact plug structure in the semiconductor layer and a sidewall of the contact plug structure in the oxide layer are coplanar.

2. The semiconductor structure as claimed in claim 1 , further comprising:

a hard mask layer formed on the semiconductor layer, wherein the isolation structure and the contact plug structure both pass through the hard mask layer.

3. The semiconductor structure as claimed in claim 1 , wherein the contact plug structure has a ring structure.

4. The semiconductor structure as claimed in claim 1 , wherein the contact plug structure surrounds the isolation structure.

5. The semiconductor structure as claimed in claim 1 , wherein a sidewall of the isolation structure comprises the dielectric layer.

6. The semiconductor structure as claimed in claim 1 , further comprising:

an inter-layer dielectric layer formed on the isolation structure and the contact plug structure; and

a conductive structure through the inter-layer dielectric layer, wherein the conductive structure is electrically connected the contact plug structure.

7. The semiconductor structure as claimed in claim 1 , wherein the sidewall of the contact plug structure in the semiconductor layer is in contact with the dielectric layer.

8. The semiconductor structure as claimed in claim 7 , wherein the dielectric layer is formed on the semiconductor layer.

9. A method for forming a semiconductor structure as set forth in claim 1 , comprising:

providing a substrate;

forming an oxide layer on the substrate;

forming a semiconductor layer on the oxide layer;

forming a first trench and a second trench in the semiconductor layer, wherein an opening of the first trench has a first width, an opening of the second trench has a second width, and the second width is greater than the first width;

forming a first dielectric layer on sidewalls of the first trench and the second trench and on the first trench and the second trench, wherein the opening of the first trench is enclosed by the first dielectric layer, but the second trench is not enclosed by the first dielectric layer; and

removing a portion of the first dielectric layer and a portion of the oxide layer, such that the second trench passes through the oxide layer to expose the substrate.

10. The method for forming the semiconductor structure as claimed in claim 9 , further comprising:

conformally forming a second dielectric layer on sidewalls of the first trench and the second trench, wherein the second trench is not completely filled with the second dielectric layer before forming the first dielectric layer.

11. The method for forming the semiconductor structure as claimed in claim 10 , wherein the second dielectric layer is formed below the first dielectric layer.

12. The method for forming the semiconductor structure as claimed in claim 10 , further comprising:

forming a hard mask layer on the semiconductor layer, wherein the second dielectric layer is formed on the hard mask layer.

13. The method for forming the semiconductor structure as claimed in claim 9 , further comprising:

filling a conductive material in the second trench to form a contact plug structure, wherein the contact plug structure is in direct contact with the substrate.

14. The method for forming the semiconductor structure as claimed in claim 13 , further comprising:

forming an inter-layer dielectric layer on the contact plug structure and the second dielectric layer; and

forming a conductive structure though the inter-layer dielectric layer, wherein the conductive structure is electrically connected to the contact plug structure.

15. The method for forming the semiconductor structure as claimed in claim 9 , further comprising:

forming a hard mask layer on the semiconductor layer, wherein the first dielectric layer is formed on the hard mask layer.

16. The method for forming the semiconductor structure as claimed in claim 9 , further comprising:

filling a conductive material in the second trench to form a contact plug structure.

17. The method for forming the semiconductor structure as claimed in claim 16 , further comprising:

forming an inter-layer dielectric layer on the contact plug structure; and

forming a conductive structure though the inter-layer dielectric layer, wherein the conductive structure is electrically connected to the contact plug structure.

18. The method for forming the semiconductor structure as claimed in claim 9 , further comprising:

forming a photoresist layer on the first dielectric layer, wherein the photoresist layer has an opening, the first dielectric layer on the second trench is exposed by the opening.

19. The method for forming the semiconductor structure as claimed in claim 9 , wherein forming the first dielectric layer on sidewalls of the first trench and the second trench and on the first trench and the second trench comprises performing a plasma enhanced chemical vapor deposition (PECVD) process.