Method for manufacturing a light emitting element
A method for manufacturing a light emitting element includes: a GaN layer is formed on an AlN-deposited plain or patterned substrate, and the stress between different materials is changed and buffered through thermal treatment of annealing under H 2 atmosphere or under H 2 and NH 3 mixed atmosphere, thus eliminating epitaxial wafer warp caused by such stress and improving epitaxial quality and light-emitting efficiency of the light-emitting element.
1. A method for manufacturing a light-emitting element, the method comprising:
1) providing a substrate;
2) depositing an AlN layer over a surface of the substrate via physical vapor deposition (PVD);
3) inputting a metal source and NH 3 , and depositing an Al x Ga 1-x N (0≤x<1) layer over a surface of the AlN layer via metal-organic chemical vapor deposition (MOCVD);
4) annealing the Al x Ga 1-x N layer to form an Al x Ga 1-x N layer in irregular or island-like shape, including: turning off the metal source and NH 3 , keeping continual input of H 2 , raising a chamber temperature, and annealing the Al x Ga 1-x N layer under an H 2 atmosphere; continually raising the chamber temperature and inputting NH 3 while H 2 is being input; and continuing annealing the Al x Ga 1-x N layer under an NH 3 /H 2 mixed atmosphere;
5) depositing a GaN layer over a surface of the annealed Al x Ga 1-x N layer; and
6) depositing an n-type layer, a light-emitting layer, and a P-type layer over a surface of the GaN layer.
2. The method of claim 1 , wherein an annealing temperature under the H 2 atmosphere is 400-1200° C., and an annealing time is 100-600 s.
3. The method of claim 1 , wherein an annealing temperature under the NH 3 /H 2 mixed atmosphere is 400-1200° C., and an annealing time is 100-500 s.
4. The method of claim 1 , wherein total annealing time under H 2 and NH 3 /H 2 mixed atmosphere is 200-600 s.
5. The method of claim 1 , wherein a growth temperature for the Al x Ga 1-x N (0≤x<1) layer is 400-600° C.
6. The method of claim 1 , wherein a thickness of the Al x Ga 1-x N (0≤x<1) layer is 10-1000 Å.
7. The method of claim 1 , wherein a thickness of the AlN layer is 10-350 Å.
8. The method of claim 1 , wherein after annealing, the chamber temperature is adjusted to 950-1150° C. for depositing the GaN layer.
9. The method of claim 1 , wherein the substrate is a plain substrate, a convex-patterned substrate, or a concave-patterned substrate.
10. A method for manufacturing a light-emitting element, comprising:
1) providing a substrate;
2) depositing an AlN layer over a surface of the substrate surface via physical vapor deposition (PVD);
3) inputting a metal source and NH 3 , and depositing an Al x Ga 1-x N (0≤x<1) layer over a surface of the AlN layer via metal-organic chemical vapor deposition (MOCVD);
4) annealing the Al x Ga 1-x N layer to form an Al x Ga 1-x N layer in irregular or island-like shape, including: turning off the metal source and NH 3 , keeping continual input of H 2 , rising chamber temperature, and annealing the Al x Ga 1-x N layer under H 2 atmosphere;
5) depositing a GaN layer on the annealed Al x Ga 1-x N layer surface; and
6) depositing an n-type layer, a light-emitting layer and a P-type layer on the GaN layer surface.
11. The method of claim 10 , wherein an annealing temperature under H 2 atmosphere is 400-1200° C., and annealing time is 100-600 s.
12. The method of claim 10 , wherein a growth temperature for the Al x Ga 1-x N (0≤x<1) layer is 400-600° C.
13. The method of claim 10 , wherein thickness of the Al x Ga 1-x N (0≤x<1) layer is 10-1000 Å.
14. The method of claim 10 , wherein thickness of the AlN layer is 10-350 Å.
15. The method of claim 10 , wherein after annealing, the chamber temperature is adjusted to 950-1150° C. for depositing the GaN layer.
16. The method of claim 10 , wherein the substrate is a plain substrate, a convex-patterned substrate or a concave-patterned substrate.