High work function MoO
Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact; removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell; depositing a high work function material onto the back side surface of the solar cell; and depositing a back contact onto the high work function material. A solar cell formed by the present techniques is also provided. Yield of the exfoliated device can be improved by removing bubbles from adhesive used for exfoliation and/or forming contact pads to access the metal grid.
1. A method of forming a solar cell, the method comprising:
forming a completed solar cell comprising a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact;
removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell;
after the substrate and the electrically conductive material have been removed, depositing a high work function material onto the back side surface of the solar cell; and
after the high work function material has been deposited onto the back side surface of the solar cell, depositing a back contact onto the high work function material.
2. The method of claim 1 , wherein the absorber comprises copper, zinc, tin, and at least one of sulfur and selenium.
3. The method of claim 1 , wherein the absorber has a thickness of from about 0.5 μm to about 2 μm, and ranges therebetween.
4. The method of claim 1 , wherein the high work function material comprises molybdenum dioxide.
5. The method of claim 1 , wherein the back contact comprises a metal selected from the group consisting of: gold, platinum, silver, and combinations thereof.
6. The method of claim 1 , further comprising:
attaching a handle substrate to a top surface of the solar cell.
7. The method of claim 6 , wherein the handle substrate comprises a fused silica plate.
8. The method of claim 6 , wherein the handle substrate is attached to the top surface of the solar cell using an epoxy, the method further comprising:
preparing the epoxy under a vacuum to prevent formation of bubbles in the epoxy.
9. The method of claim 8 , further comprising:
spinning the epoxy in a centrifuge to remove bubbles from the epoxy.
10. The method of claim 1 , further comprising:
forming a via in the solar cell by selectively removing a portion of the solar cell down to the electrically conductive material.
11. The method of claim 10 , further comprising:
forming a patterned mask on a top surface of the solar cell; and
depositing a contact metal, through the patterned mask, into the via forming a through contact in the via.
12. The method of claim 11 , wherein the contact metal is selected from the group consisting of: nickel and aluminum.
13. The method of claim 11 further comprising:
depositing the contact metal, through the patterned mask, forming a contact pad on the transparent front contact connecting the through contact to the metal grid.
14. The method of claim 1 , further comprising:
smoothing the backside surface of the solar cell after the substrate and the electrically conductive material have been removed.
15. The method of claim 14 , wherein the smoothing is performed using a wet etch.
16. The method of claim 15 , wherein the wet etch comprises bromine methanol.
17. The method of claim 1 , wherein the transparent front contact comprises a single layer of aluminum (Al)-doped zinc oxide (ZnO) (AZO) disposed directly on the buffer layer.