IP Library Granted Patent US 9,892,911
Granted Patent B2
US 9,892,911 · App. 15/428,416 · Granted Feb 13, 2018

Epitaxial structure with air voids in shape of trapezoid

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Quick Facts
Patent No.
US 9,892,911
App. No.
15/428,416
Granted
Feb 13, 2018
Kind
B2
Abstract

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.

Claims (14)

1. An epitaxial structure, comprises:

a substrate;

a buffer layer disposed on the substrate;

a first epitaxial layer disposed over the buffer layer, wherein the first epitaxial layer includes at least one cavity that exposes a portion of the buffer layer; and

a second epitaxial layer disposed on the first epitaxial layer, wherein the second epitaxial layer has at least one concave portion, and the cavity and the concave portion are aligned to define an air void in a shape of trapezoid on the buffer layer.

2. The epitaxial structure according to claim 1 , wherein a top portion of the air void is the concave portion of the second epitaxial layer and comprises three facets, and a bottom portion of the air void lands on the buffer layer and is substantially planar.

3. The epitaxial structure according to claim 2 , wherein the air void has a height of about 0.5 μm to about 3 μm, and the bottom portion of the air void has a width of about 0.5 μm to about 5 μm.

4. An epitaxial structure, comprises:

a substrate;

a patterned sacrifice layer disposed on the substrate;

a first epitaxial layer disposed over the patterned sacrifice layer and the substrate, wherein the first epitaxial layer includes at least one cavity that exposes a portion of the patterned sacrifice layer; and

a second epitaxial layer disposed on the first epitaxial layer, wherein the second epitaxial layer has at least one concave portion, and the cavity and the concave portion are aligned to define an air void in a shape of trapezoid on the patterned sacrifice layer.

5. The epitaxial structure according to claim 4 , wherein a top portion of the air void is the concave portion of the second epitaxial layer and comprises three facets, and a bottom portion of the air void lands on the patterned sacrifice layer and is substantially planar.

6. The epitaxial structure according to claim 5 , wherein the air void has a height of about 0.5 μm to about 3 μm, and the bottom portion of the air void has a width of about 0.5 μm to about 5 μm.

Assignments (2)
MERGER Recorded Mar 27, 2026
From: LEXTAR ELECTRONICS CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075286/0822 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 22, 2017
From: CHEN, JUN-RONG; CHOU, HSIU-MEI; YE, JHAO-CHENG
To: LEXTAR ELECTRONICS CORPORATION
Reel/Frame 041342/0256 →