Semiconductor device comprising a temperature sensor, temperature sensor and method of manufacturing a semiconductor device comprising a temperature sensor
A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a source contact, the source contact including a first and second source contact portion, and a gate electrode in a gate trench in the first main surface adjacent to a body region. The body region and a drift zone are disposed along a first direction parallel to the first main surface between the source region and a drain region. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region, the first source contact portion further including a portion of the semiconductor substrate between the source conductive material and the second source contact portion. The semiconductor device further includes a temperature sensor in the semiconductor substrate.
1. A semiconductor device comprising a transistor in a semiconductor substrate having a first main surface, the transistor comprising:
a source region;
a source contact electrically connected to the source region, the source contact comprising a first source contact portion and a second source contact portion; and
a gate electrode in a gate trench in the first main surface adjacent to a body region, the gate electrode being configured to control a conductivity of a channel in the body region,
the body region and a drift zone are disposed along a first direction parallel to the first main surface between the source region and a drain region,
the second source contact portion is disposed at a second main surface of the semiconductor substrate, and
the first source contact portion comprises a source conductive material in direct contact with the source region, the first source contact portion further comprises a portion of the semiconductor substrate between the source conductive material and the second source contact portion, and
wherein the semiconductor device further comprises a temperature sensor in the semiconductor substrate.
2. The semiconductor device according to claim 1 , wherein the semiconductor substrate comprises a first region of a first conductivity type and a first portion of a second conductivity type, a part of the first portion being a component of the first source contact portion, and the temperature sensor comprises a first contact in contact with the first region, and a second contact in contact with the first portion.
3. The semiconductor device according to claim 2 , wherein the source conductive material is disposed in a source contact groove in the first main surface, the source contact groove extending to the first portion, and the second contact is disposed in a second sensor contact groove in the first main surface and extends to the first portion.
4. The semiconductor device according to claim 3 , wherein the source contact groove and the second sensor contact groove extend to a same depth.
5. The semiconductor device according to claim 3 , wherein the second sensor contact groove does not extend to the second main surface of the semiconductor substrate.
6. The semiconductor device according to claim 2 , wherein the first contact is disposed in a first sensor contact groove in the first main surface.
7. The semiconductor device according to claim 2 , wherein the temperature sensor further comprises an emitter region of the second conductivity type in contact with the first region.
8. The semiconductor device according to claim 7 , wherein the first and the second contact of the temperature sensor are connected to a common terminal.
9. A semiconductor device comprising:
a temperature sensor in a semiconductor body comprising a first region of a first conductivity type and a first portion of a second conductivity type, the first region being disposed over the first portion;
the temperature sensor comprising a first contact in contact with the first region, and a second contact in contact with the first portion; and
the second contact being disposed in a second sensor contact groove in a first main surface of the semiconductor body and extending to the first portion.
10. The semiconductor device according to claim 9 , wherein the second sensor contact groove does not extend to a second main surface of the semiconductor body.
11. The semiconductor device according to claim 9 , further comprising an emitter region of the second conductivity type in contact with the first region.
12. The semiconductor device according to claim 11 , wherein the first and the second contact of the temperature sensor are connected to a common terminal.
13. The semiconductor device according to claim 9 , further comprising a transistor formed in the semiconductor device, the transistor comprising a source region and a drain region arranged along a first direction parallel to the first main surface.
14. The semiconductor device according to claim 13 , wherein the transistor further comprises a gate electrode entirely disposed over the first main surface.
15. The semiconductor device according to claim 14 , further comprising a source contact including a first source contact portion and a second source contact portion disposed at a second main surface opposite the first main surface.
16. The semiconductor device according to claim 14 , further comprising a drain contact including a first drain contact portion and a second drain contact portion disposed at a second main surface opposite the first main surface.
17. An electric circuit comprising the semiconductor device according to claim 1 .
18. The electric circuit according to claim 17 , the electric circuit being a switching device.