Metal-insulator-semiconductor field effect transistor (MISFET) device and method for manufacturing the same
A semiconductor device includes a substrate having a main surface inclined in an off-direction from a {0001} surface, a semiconductor layer, and an epitaxial layer. The semiconductor layer includes a trench. Where an upstream side is an off-angle upstream side and a downstream side is an off-angle downstream side in a direction with the off-direction projected on the main surface of the substrate, a side wall of the trench includes first and second side wall portions facing each other and each crossing the off-direction of the substrate. The first side wall portion is situated closer to the off-angle upstream side than the second side wall portion.
1. A semiconductor device comprising:
a substrate having a main surface inclined in an off-direction from a {0001} surface; and
a semiconductor layer disposed on the main surface of the substrate,
wherein
the semiconductor layer includes:
a first conductive-type drift region;
a second conductive-type body region disposed on the first conductive-type drift region;
a first conductive-type source region which is disposed on the second conductive-type body region and which is in contact with an upper surface of the semiconductor layer; and
a trench extending through the second conductive-type body region and the first conductive-type source region and having a bottom portion in the first conductive-type drift region,
where an upstream side is an off-angle upstream side and a downstream side is an off-angle downstream side in a direction with the off-direction projected on the main surface of the substrate, a side wall of the trench includes a first side wall portion and a second side wall portion facing each other and each crossing the off-direction of the substrate, and the first side wall portion is situated closer to the off-angle upstream side than the second side wall portion is,
the semiconductor device further comprising:
an epitaxial layer disposed at least on the first side wall portion and the second side wall portion of the trench, and a part of a main surface of the first conductive-type source region in a region adjacent to the trench; and
a source electrode disposed on the first conductive-type source region so as to be in contact with the first conductive-type source region,
wherein
the epitaxial layer is disposed on a first portion of the main surface of the first conductive-type source region, the first portion being situated on the off-angle upstream side of the trench, and on a second portion of the main surface of the first conductive-type source region, the second portion being situated on the off-angle downstream side of the trench, and
a relationship of TS>|TL−TR| is satisfied, in which TL represents a maximum thickness of the epitaxial layer on the first portion, TR represents a minimum thickness of the epitaxial layer on the second portion (TR>0), and TS represents a thickness of the first conductive-type source region.
2. The semiconductor device according to claim 1 , wherein
a relationship of TS/2>|TL−TR| is satisfied.
3. The semiconductor device according to claim 1 or 2 , wherein
the trench further includes:
a first upper corner portion situated between the first side wall portion and the first portion of the first conductive-type source region; and
a second upper corner portion situated between the second side wall portion and the second portion of the first conductive-type source region, and
the epitaxial layer includes, on the first upper corner portion and the second upper corner portion, a facet plane having a crystal orientation different from each of a crystal orientation of the {0001} surface and a crystal orientation of surfaces forming the first and second side wall portions of the trench.
4. The semiconductor device according to claim 1 , wherein
a thickness C 1 of the epitaxial layer on the first side wall portion of the trench and a thickness C 2 of the epitaxial layer on the second side wall portion of the trench satisfy a relationship of 0.8≤C 1 /C 2 ≤1.2.
5. The semiconductor device according to claim 4 , wherein
the thickness C 1 of the epitaxial layer on the first side wall portion of the trench and the thickness C 2 of the epitaxial layer on the second side wall portion of the trench satisfy a relationship of 0.9≤C 1 /C 2 ≤1.1.
6. The semiconductor device according to claim 1 , wherein
the substrate is a silicon carbide substrate.
7. The semiconductor device according to claim 1 , wherein
the off-direction is a <11-20> direction, and at least one of the first side wall portion and the second side wall portion of the trench includes a {11-20} surface.
8. The semiconductor device according to claim 1 , wherein
each of the epitaxial layer and the semiconductor layer is a silicon carbide layer,
the source electrode includes:
a first source electrode which is in contact with the first conductive-type source region on the off-angle upstream side of the trench; and
a second source electrode which is in contact with the first conductive-type source region on the off-angle downstream side of the trench, and
each of the first source electrode and the second source electrode includes an alloy layer which is in contact with the first conductive-type source region, and the alloy layer is a silicide layer obtained by reaction of a metal with silicon carbide in the epitaxial layer and the first conductive-type source region.