IP Library Granted Patent US 10,108,088
Granted Patent B2
US 10,108,088 · App. 15/435,862 · Granted Oct 23, 2018

Radiation-sensitive composition and pattern-forming method

Inventor: Kazuki Kasahara (Tokyo, JP)
Assignee: JSR CORPORATION
G03F7/0043B32B5/16G03F7/0045G03F7/162G03F7/168G03F7/2004G03F7/2037G03F7/322G03F7/38
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Quick Facts
Patent No.
US 10,108,088
App. No.
15/435,862
Granted
Oct 23, 2018
Kind
B2
Abstract

A radiation-sensitive composition includes particles including a metal oxide as a principal component, a radiation-sensitive acid generator, and an organic solvent. A metal atom constituting the metal oxide includes a first metal atom that is a zinc atom, a boron atom, an aluminum atom, a gallium atom, a thallium atom, a germanium atom, an antimony atom, a bismuth atom, a tellurium atom, or a combination thereof. A van der Waals volume of an acid generated from the radiation-sensitive acid generator is no less than 2.0×10 −28 m 3 . A percentage content of the first metal atom with respect to total metal atoms in the radiation-sensitive composition is no less than 50 atomic %.

Claims (36)

1. A radiation-sensitive composition comprising:

particles comprising a metal oxide as a principal component;

a radiation-sensitive acid generator; and

an organic solvent,

wherein:

the metal oxide comprises at least one metal atom selected from the group consisting of a zinc atom, a boron atom, an aluminum atom, a gallium atom, a thallium atom, a germanium atom, an antimony atom, a bismuth atom, and a tellurium atom;

the number of the at least one metal atom in the particles is from 2 to 6;

a van der Waals volume of an acid generated from the radiation-sensitive acid generator is no less than 2.0×10 −28 m 3 ; and

a percentage content of the at least one metal atom with respect to total metal atoms in the radiation-sensitive composition is no less than 50 atomic %.

2. The radiation-sensitive composition according to claim 1 , wherein a content of the radiation-sensitive acid generator with respect to a total solid content in the radiation-sensitive composition is no less than 1% by mass and no greater than 40% by mass.

3. The radiation-sensitive composition according to claim 2 , wherein an average particle diameter of the particles is no greater than 20 nm.

4. The radiation-sensitive composition according to claim 1 , wherein an average particle diameter of the particles is no greater than 20 nm.

5. The radiation-sensitive composition according to claim 1 , wherein the particles further comprise a ligand derived from an organic acid.

6. The radiation-sensitive composition according to claim 5 , wherein the organic acid is at least one selected from the group consisting of a carboxylic acid, a sulfonic acid, a sulfinic acid, an organic phosphinic acid, an organic phosphonic acid, a phenol, an enol, a thiol, an acid imide, an oxime, and a sulfonamide.

7. The radiation-sensitive composition according to claim 5 , wherein the organic acid is a carboxylic acid.

8. The radiation-sensitive composition according to claim 5 , wherein the organic acid is at least one selected from the group consisting of methacrylic acid, tiglic acid, benzoic acid, m-toluic acid, o-toluic acid, and 3-iodobenzoic acid.

9. The radiation-sensitive composition according to claim 5 , wherein a percentage content of the ligand derived from the organic acid is from 40 to 95% by mass.

10. The radiation-sensitive composition according to claim 1 , wherein the radiation-sensitive acid generator is an onium salt.

11. The radiation-sensitive composition according to claim 10 , wherein the onium salt is a sulfonium salt.

12. The radiation-sensitive composition according to claim 1 , wherein the percentage content of the at least one metal atom with respect to the total metal atoms in the radiation-sensitive composition is no less than 80 atomic %.

13. The radiation-sensitive composition according to claim 1 , wherein the van der Waals volume of an acid generated from the radiation-sensitive acid generator is no less than 3.0×10 −28 m 3 .

14. A pattern-forming method comprising:

applying the radiation-sensitive composition according to claim 1 to form a film on a substrate;

exposing the film; and

developing the film exposed.

15. The pattern-forming method according to claim 14 , wherein a developer solution used in the developing is an alkaline aqueous solution.

16. The pattern-forming method according to claim 15 , wherein a radioactive ray used in the exposing is an extreme ultraviolet ray or an electron beam.

17. The pattern-forming method according to claim 14 , wherein a developer solution used in the developing is an organic solvent-containing liquid.

18. The pattern-forming method according to claim 17 , wherein a radioactive ray used in the exposing is an extreme ultraviolet ray or an electron beam.

19. The pattern-forming method according to claim 14 , wherein a radioactive ray used in the exposing is an extreme ultraviolet ray or an electron beam.

20. The radiation-sensitive composition according to claim 5 , wherein the radiation-sensitive composition consists of:

the particles;

the radiation-sensitive acid generator;

the solvent;

optionally, a ligand other than the ligand derived from the organic acid; and

optionally, a surfactant.

Assignments (3)
MERGER Recorded Mar 23, 2026
From: JSR CORPORATION
To: JICC-02, CO., LTD
Reel/Frame 075191/0149 →
CHANGE OF NAME Recorded Mar 23, 2026
From: JICC-02 CO., LTD
To: JSR CORPORATION
Reel/Frame 075192/0023 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 17, 2017
From: KASAHARA, KAZUKI
To: JSR CORPORATION
Reel/Frame 041287/0532 →
Continuity (2)
Provisional Application 62297444 · Feb 19, 2016
Related Publication 20170242336A1 · Aug 24, 2017