Transistor array panel

1. A transistor array panel comprising:

a substrate;

a transistor positioned on the substrate, the transistor including a semiconductor layer;

a buffer layer positioned between the substrate and the semiconductor layer of the transistor and including an insulating material; and

a bottom layer positioned between the substrate and the buffer layer,

wherein the bottom layer and the semiconductor layer overlap each other,

wherein the bottom layer includes a first layer and a second layer that are stacked in a direction away from the substrate, and

wherein second layer is disposed between the buffer layer and the first layer and includes a first metal alloy including copper, nickel and zinc, wherein the first metal alloy includes the copper at about 40 atomic weight percent, the nickel at about 40 atomic weight percent and the zinc at about 20 atomic weight percent.

2. The transistor array panel of claim 1 , wherein

the bottom layer further includes a third layer positioned between the first layer and the substrate, and

the third layer includes a second metal alloy including copper and nickel.

3. The transistor array panel of claim 2 ,

wherein the second metal alloy further includes zinc, and

wherein the second metal alloy includes the copper at about 40 atomic weight percent, the nickel at about 40 atomic weight percent and the zinc at about 20 atomic weight percent.

4. The transistor array panel of claim 3 ,

wherein the first layer includes copper.

5. The transistor array panel of claim 3 ,

wherein the insulating material of the buffer layer further includes hydrogen at a predetermined concentration.

6. The transistor array panel of claim 5 ,

wherein the insulating material of the buffer layer includes silicon oxide.

7. The transistor array panel of claim 3 , wherein the transistor includes a first source or drain region, and a second source or drain region that are connected to the semiconductor layer, and

wherein a gate electrode overlap the semiconductor layer,

wherein the second source or drain region and the bottom layer are electrically connected to each other.

8. The transistor array panel of claim 7 , further comprising:

an interlayer insulating layer positioned on the transistor; and

a data conductor positioned on the interlayer insulating layer,

wherein the interlayer insulating layer has a first contact hole exposing the first source or drain region and a second contact hole exposing the second source or drain region,

wherein the interlayer insulating layer and the buffer layer has a third contact hole exposing the bottom layer, and

wherein the data conductor includes a first connection part connected to the first source or drain region through the first contact hole, a second connection part connected to the second source or drain region through the second contact hole, and a third connection part connected to the bottom layer through the third contact hole.

9. The transistor array panel of claim 8 , wherein

the second connection part and the third connection part are connected to each other.

10. The transistor array panel of claim 9 , further comprising:

a passivation layer positioned on the data conductor and having a fourth contact hole exposing, the third connection part; and

a pixel electrode positioned on the passivation layer and connected to the third connection part through the fourth contact hole.

11. The transistor array panel of claim 3 ,

wherein the transistor includes a first source or drain region and a second source or drain region that are connected to the semiconductor layer, and a gate electrode overlapping the semiconductor layer; and

wherein the second source or drain region and the gate electrode are electrically connected to each other.

12. The transistor array panel of claim 11 , further comprising:

an interlayer insulating layer positioned on the transistor; and

a data conductor positioned on the interlayer insulating layer,

wherein the interlayer insulating layer has a first contact hole exposing the first source or drain region, a second contact hole exposing the second source or drain region, and a sixth contact hole exposing the gate electrode,

wherein the interlayer insulating layer and the buffer layer have a fifth contact hole exposing the bottom layer, and

wherein the data conductor includes a first connection part connected to the first source or drain region through the first contact hole, a second connection part connected to the second source or drain region through the second contact hole, a third connection part connected to the gate electrode through the sixth contact hole, and a fourth connection part connected to the bottom layer through the fifth contact hole.

13. The transistor array panel of claim 12 ,

wherein the second connection part and the third connection part are connected to each other.

14. A transistor array panel comprising:

a substrate;

a transistor positioned on the substrate and including a semiconductor layer;

a buffer layer positioned between the substrate and the transistor and including an insulating material; and

a bottom layer positioned between the substrate and the buffer layer and overlapping the semiconductor layer,

wherein the bottom layer includes a first layer including a metal and a second layer including a metal alloy including copper, nickel and zinc, wherein the metal alloy includes copper at about 40 atomic weight percent, the nickel at about 40 atomic weight percent and the zinc at about 20 atomic weight percent.

15. The transistor array panel of claim 14 ,

wherein the first layer includes copper.

16. The transistor array panel of claim 15 ,

wherein the insulating material of the buffer layer includes hydrogen at a predetermined concentration.

17. The transistor array panel of claim 16 ,

wherein the insulating material of the buffer layer includes silicon oxide.

18. A transistor array panel comprising:

a substrate;

a transistor positioned on the substrate and including a semiconductor layer;

a buffer layer positioned between the substrate and the transistor and including an insulating material; and

a bottom layer positioned between the substrate and the buffer layer and overlapping the semiconductor layer,

wherein the bottom layer includes a first layer including a metal and a second layer including a metal alloy including copper, nickel and zinc,

wherein the transistor includes a first source or drain region and a second source or drain region that are connected to the semiconductor layer, and a gate electrode overlapping the semiconductor layer, and

wherein the second source or drain region and the bottom layer are electrically connected to each other.

19. The transistor array panel of claim 14 ,

wherein the transistor includes a first source or drain region and a second source or drain region that are connected to the semiconductor layer, and a gate electrode overlapping the semiconductor layer, and

wherein the second source or drain region and the gate electrode are electrically connected to each other.

20. A transistor array panel comprising:

a substrate including a first region and a second region;

a bottom layer positioned on the first region of the substrate, wherein the bottom layer includes a metal layer formed of a first metal and a metal alloy layer including the first metal;

a driving transistor positioned on the substrate, the driving transistor overlapping the bottom layer;

a switching transistor positioned on the second region of the substrate;

a pixel electrode electrically connected to a first source or drain region of the driving transistor; and

a gate line connected to a switching gate electrode of the switching transistor,

wherein a gate electrode of the driving transistor is electrically connected to a first source or drain region of the switching transistor,

wherein the gate line is positioned lower than the gate electrode of the driving transistor, and

wherein the bottom layer is electrically connected to the first source or drain region of the driving transistor and the pixel electrode.

21. The transistor array panel of claim 20 ,

wherein the first metal includes copper.

22. The transistor array panel of claim 21 ,

wherein the metal alloy layer further includes nickel and zinc.

23. The transistor array panel of claim 22 ,

wherein the metal alloy layer includes the copper at about 40 atomic weight percent, the nickel at about 40 atomic weight percent and the zinc at about 20 atomic weight percent.

24. The transistor array panel of claim 20 ,

wherein the gate electrode of the driving transistor is positioned higher than a portion of the gate line from the substrate.

25. The transistor array panel of claim 24 ,

wherein the portion of the gate line and the bottom layer are non-overlapped.

26. The transistor array panel of claim 20 , further comprising:

a buffer layer positioned between the substrate and the driving transistor and between the substrate and the gate line connected to the switching transistor.

27. The transistor array panel of claim 20 , further comprising:

a driving voltage line electrically connected to a second source or drain region of the driving transistor; and

a data line electrically connected to a second switching source or drain region of the switching transistor.