Method of forming electrodes for electronic device using two dimensional semiconductor and electronic device thereof
In case of forming electrodes for electronic device using a two-dimensional semiconductor, a two-dimensional semiconductor layer doped into n-type or p-type is formed on a substrate, a first area and a second area of the doped two-dimensional semiconductor layer is patterned into a predetermined pattern shape, and a first electrode and a second electrode are formed on the patterned first and second areas, respectively.
1. An electronic device using a two-dimensional semiconductor, comprising:
a two-dimensional semiconductor layer disposed on an insulation layer and comprising a plurality of patterned portions selectively exposing the insulation layer;
a first electrode disposed on a first portion of the plurality of patterned portions of the two-dimensional semiconductor layer; and
a second electrode disposed on a second portion of the plurality of patterned portions of the two-dimensional semiconductor layer and spaced apart from the first electrode,
wherein each of the first portion and second portion has two or more patterned portions,
wherein the respective electrode is disposed directly on upper and side surfaces of the two or more patterned portions of the two-dimensional semiconductor layer and on the exposed insulation layer, and
wherein the insulation layer comprises photosensitive particles, and the photosensitive particles comprise cadmium selenide (CdSe), titanium oxide (TiO2), or ruthenium compounds.
2. The electronic device using a two-dimensional semiconductor of claim 1 , wherein the two-dimensional semiconductor layer has an n-type conductivity or a p-type conductivity.
3. The electronic device using a two-dimensional semiconductor of claim 1 , wherein the photosensitive particles are sensitive to light and comprise a photoinduced electron transfer (PET) material that absorbs photons and transfers electrons.
4. The electronic device using a two-dimensional semiconductor of claim 1 , wherein the insulation layer comprises a doping material that comprises polyvinylpyrrolidone (PVP) or poly(melamine-co-formaldehyde) (PMF) for doping the two-dimensional semiconductor layer comprising graphene.
5. The electronic device using a two-dimensional semiconductor of claim 4 , wherein the insulation layer comprises the doping material in addition to photosensitive particles.