Electro-optical device with asymmetric, vertical current injection ohmic contacts
The present invention is notably directed to an electro-optical device. This device has a layer structure, which comprises a stack of III-V semiconductor gain materials, an n-doped layer and a p-doped layer. The III-V materials are stacked along a stacking direction z, which is perpendicular to a main plane of the stack. The n-doped layer extends essentially parallel to the main plane of the stack, on one side thereof. The p-doped layer too extends essentially parallel to this main plane, but on another side thereof. A median vertical plane can be defined in the layer structure, which plane is parallel to the stacking direction z and perpendicular to the main plane of the stack. Now, the device further comprises two sets of ohmic contacts, wherein the ohmic contacts of each set are configured for vertical current injection in the stack of III-V semiconductor gain materials.
1. An electro-optical device having a layer structure comprising:
a stack of III-V semiconductor gain materials stacked along a stacking direction z perpendicular to a main plane of the stack, wherein the stack of III-V semiconductor gain materials is laterally embedded in a current blocking layer comprising a semi-insulating InP configuration, the latter extending essentially parallel to the main plane of the stack;
an n-doped layer extending essentially parallel to said main plane, on one side thereof;
a p-doped layer extending essentially parallel to said main plane, on another side thereof; and
a tapered waveguide core embedded in a cladding structure, the waveguide core extending opposite to the stack of III-V semiconductor gain materials with respect to the n-doped layer, along a longitudinal direction comprised in the median vertical plane and parallel to the main plane of the stack, wherein the tapered waveguide core is configured to enable adiabatic coupling between the stack of III-V semiconductor gain materials and the tapered waveguide core,
wherein a median vertical plane of the layer structure is parallel to said stacking direction z, and perpendicular to said main plane of the stack, and through the middle of the stack;
wherein the device further comprises two sets of ohmic contacts configured for vertical current injection in the stack of III-V semiconductor gain materials, the two sets consisting of: a first set of one or more n-type ohmic contacts in contact with the n-doped layer; and a second set of one or more p-type ohmic contacts only in contact with the p-doped layer, one of the p-type ohmic contacts disposed on and overlapping with the current blocking layer in said stacking direction z, the first set being arranged on a first side of said median vertical plane and the second set being arranged on a second side of said median vertical plane with no additional n-type ohmic contacts on the second side of said median vertical plan and no additional p-type ohmic contacts on the first side of said median vertical plane.
2. The electro-optical device according to claim 1 , wherein:
said sets of ohmic contacts are furthermore on respective sides of a median horizontal plane of the layer structure, which said median horizontal plane is perpendicular to each of said stacking direction z and said median vertical plane.
3. The electro-optical device according to claim 1 , wherein:
each of the two sets of ohmic contacts consists of one ohmic contact only, wherein the device comprises two ohmic contacts arranged on respective sides of said median vertical plane.
4. The electro-optical device according to claim 1 , wherein:
said layer structure further comprises an electron blocking layer extending parallel to the main plane of the stack of III-V semiconductor gain materials, so as to separate the latter from the p-doped layer.
5. The electro-optical device according to claim 1 , wherein:
the stack of III-V semiconductor gain materials comprises two separate confinement heterostructures and an active region sandwiched between said heterostructures.
6. The electro-optical device according to claim 1 , wherein:
said stack of III-V semiconductor gain materials is configured as one of:
a laser;
an optical detector; and
a semiconductor optical amplifier (SOA).
7. The electro-optical device according to claim 6 , wherein:
said device is configured as a lateral electric field, vertical current injection laser device.
8. The electro-optical device according to claim 7 , wherein:
said device is configured as an edge-emitting laser.
9. The electro-optical device according to claim 1 , wherein:
the device is configured to allow a hybrid-mode optical coupling between an active region of the stack of III-V semiconductor gain materials and the tapered waveguide core.
10. The electro-optical device according to claim 1 , wherein: said layer structure has a form factor, whereby an average dimension of the layer structure in a median horizontal plane of the layer structure is substantially larger than an average dimension of the layer structure in said median vertical plane, the median horizontal plane being perpendicular to each of the stacking direction z and the median vertical plane.
11. An electro-optical device, having a layer structure comprising:
a stack of III-V semiconductor gain materials stacked along a stacking direction z that is perpendicular to a main plane of the stack, wherein the stack of III-V semiconductor gain materials is laterally embedded in a current blocking layer comprising a semi-insulating InP configuration, the latter extending essentially parallel to the main plane of the stack;
an n-doped layer extending essentially parallel to said main plane, on one side thereof; and
a p-doped layer extending essentially parallel to said main plane, on another side thereof;
wherein a median vertical plane of the layer structure is parallel to said stacking direction z, perpendicular to said main plane of the stack, and through the middle of the layer structure;
wherein the device further comprises a tapered waveguide core embedded in a cladding structure, the waveguide core extending essentially perpendicular to said direction z, opposite and parallel to the stack of III-V semiconductor gain materials with respect to the n-doped layer, the tapered waveguide core being configured to adiabatically couple radiation between the stack of III-V semiconductor gain materials and the tapered waveguide core;
wherein the device further comprises two sets of ohmic contacts configured for vertical current injection in the stack of III-V semiconductor gain materials, the two sets consisting of: a first set of one or more n-type ohmic contacts in contact with the n-doped layer; and a second set of one or more p-type ohmic contacts only in contact with the p-doped layer, one of the p-type ohmic contacts disposed on and overlapping with the current blocking layer in said stacking direction z, the first set being arranged on a first side of said median vertical plane and the second set being arranged on a second side of said median vertical plane with no additional n-type ohmic contacts on the second side of said median vertical plan and no additional p-type ohmic contacts on the first side of said median vertical plane.
12. The electro-optical device according to claim 11 , wherein:
the waveguide core is structured so as to comprise: an input portion; a middle portion; an output portion; and tapers, the middle portion connected to the input portion and the output portion via the tapers, the latter narrowing inwardly toward the middle portion, the tapers and the middle portion being, altogether, vis-à-vis the stack of III-V semiconductor gain materials.
13. The electro-optical device according to claim 12 , wherein:
said device is configured as a distributed Bragg reflector laser, the optical waveguide core structured so as to comprise one or more Bragg reflectors arranged in one or each of: the input portion and the output portion.
14. The electro-optical device according to claim 12 , wherein:
said device is configured as a distributed feedback laser, the optical waveguide core being structured so as to comprise one or more distributed feedback reflectors arranged in said middle portion.
15. The electro-optical device according to claim 14 , wherein:
an average thickness of said stack of III-V semiconductor gain materials is between 50 nm and 400 nm.
16. The electro-optical device according to claim 14 , wherein:
said average thickness of the stack is between 220 nm and 280 nm.
17. The electro-optical device according to claim 11 , wherein:
the tapered waveguide core comprises silicon and the cladding structure comprises a material arranged between the n-doped layer and the tapered waveguide core, said material having a refractive index that is larger than 1.54 for said radiation and a bandgap, which, in energy units, is larger than an average energy of said radiation.
18. The electro-optical device according to claim 16 , wherein:
a minimal distance between a lower layer of said stack of III-V semiconductor gain materials and each of the tapered silicon waveguide is between 10 and 1000 nm.
19. The electro-optical device according to claim 17 , wherein
said minimal distance is between 300 and 800 nm.
20. The electro-optical device according to claim 17 , wherein
said minimal distance is between 400 and 600 nm.
21. The optoelectronic device according to claim 20 , wherein
the optoelectronic device further comprises an integrated circuit, or IC, monolithically integrated with said electro-optical device, as a complementary metal oxide semiconductor integrated circuit, or CMOS IC.
22. The optoelectronic device according to claim 21 , wherein
said optoelectronic device is a BiCMOS device and said integrated circuit comprises a heterostructure bipolar transistor.