Semiconductor device having inductor
A semiconductor device includes first and second winding portions disposed in a first level of an insulating layer and surrounding a center region thereof. Each of the winding portions includes conductive lines arranged from the inside to the outside. First and second extending conductive lines are disposed in the first level of the insulating layer. A third extending conductive line is disposed in a second level of the insulating layer. The first extending conductive line is coupled between the innermost conductive line of the second winding and the third extending conductive line. The second extending conductive line is coupled between the innermost conductive line of the first winding portion and the third extending conductive line. The first extending conductive line and the third extending conductive line coupled thereto are arranged in a helix or a spiral spatial configuration.
1. A semiconductor device, comprising:
an insulating layer disposed over a substrate, wherein the insulating layer has a center region;
a first winding portion and a second winding portion electrically connected to the first winding portion, disposed in a first level of the insulating layer and surrounding the center region, wherein each of the first winding portion and the second winding portion comprises a plurality of conductive lines arranged from the inside to the outside;
a first extending conductive line and a second extending conductive line partially surrounding the first extending conductive line, disposed in the first level of the insulating layer, wherein the first winding portion and the second winding portion surround the first extending conductive line and the second extending conductive line; and
a third extending conductive line disposed in a second level of the insulating layer and surrounding the center region,
wherein the extending conductive lines and the conductive lines have a first end and a second end, wherein the first end and the second end of the first extending conductive line are respectively coupled to the first end of an innermost conductive line of the second winding portion and the first end of the third extending conductive line, and the first end and the second end of the second extending conductive line are respectively coupled to the first end of an innermost conductive line of the first winding portion and the second end of the third extending conductive line, and wherein the first extending conductive line and the third extending conductive line coupled thereto are arranged in a helix or a spiral spatial configuration.
2. The semiconductor device as claimed in claim 1 , wherein the conductive lines of the first winding portion and the conductive lines of the second winding portion respectively comprise a first conductive line, a second conductive line, a third conductive line, and a fourth conductive line successively arranged from the inside to the outside.
3. The semiconductor device as claimed in claim 2 , wherein the fourth conductive lines extend along and overlap the third conductive line.
4. The semiconductor device as claimed in claim 2 , wherein the fourth conductive lines extend along the third conductive line, and a portion of each fourth conductive line is laterally shifted with respect to a portion of the third extending conductive line.
5. The semiconductor device as claimed in claim 2 , further comprising a coupling portion disposed in the first insulating layer between the first winding portion and the second winding portion, and comprising:
a first pair of connection layers connecting the first ends of the first conductive lines to the first end of the first extending conductive line and the first end of the second extending conductive line;
a second pair of connection layers cross-connecting the first ends of the second conductive lines and the first ends of the third conductive lines;
a third pair of connection layers cross-connecting the second ends of the first conductive lines and the second ends of the second conductive lines; and
a fourth pair of connection layers cross-connecting the second ends of the third conductive lines and the second ends of the fourth conductive lines.
6. The semiconductor device as claimed in claim 2 , further comprising:
a first input/output portion extends outward from the first end of the outermost of the conductive lines of the first winding portion;
a second input/output portion that extends outward from the first end of the outermost of the conductive lines of the second winding portion; and
a third input/output portion that extends outward from the third extending conductive line.
7. The semiconductor device as claimed in claim 1 , further comprising a multi-layer interconnect structure disposed below the second level of the insulating layer, and connected to the third extending conductive line through at least two conductive plugs.
8. The semiconductor device as claimed in claim 1 , further comprising a guard ring disposed in a third level below the second level of the insulating layer, surrounding the first winding portion and the second winding portion, and electrically connected to the substrate.
9. The semiconductor device as claimed in claim 1 , wherein the third extending conductive line has a connection portion that loops the center region in a circle, and wherein one end of the connection portion is the first end of the third extending conductive line.
10. The semiconductor device as claimed in claim 1 , wherein the third extending conductive line has a connection portion that loops in a circle, and wherein one end of the connection portion is the second end of the third extending conductive line.