Resist pattern-forming method

1. A resist pattern-forming method comprising:

applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film, the resist underlayer film-forming composition comprising (A) a polysiloxane;

applying a radiation-sensitive resin composition to the resist underlayer film to form a resist film, the radiation-sensitive resin composition comprising:

(a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid; and

(a2) a fluorine-containing polymer,

exposing the resist film; and

developing the exposed resist film using a developer that comprises at least one organic solvent selected from the group consisting of an alcohol, an ether, a ketone, an amide, an ester and a hydrocarbon.

2. The resist pattern forming method according to claim 1 , wherein the polysiloxane (A) is a hydrolysis-condensation product of at least one silane compound comprising a silane compound shown by a formula (i),

R A a SiX 4-a   (i)

wherein R A represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, an alkenyl group, an aryl group, or a cyano group; the alkyl group represented by R A is unsubstituted, or at least one hydrogen atom of the alkyl group represented by R A is substituted with a glycidyloxy group, an oxetanyl group, an acid anhydride group, or a cyano group; the aryl group represented by R A is unsubstituted, or at least one hydrogen atom of the aryl group represented by R A is substituted with a hydroxyl group; X represents a halogen atom or —OR B , wherein R B represents a monovalent organic group; a is an integer from 0 to 3; in a case where a plurality of R A are present, each of the plurality of R A is either identical or different; and in a case where plurality of X are present, each of the plurality of X is either identical or different.

3. The resist pattern-forming method according to claim 2 , wherein the resist underlayer film-forming composition further comprises (B) a nitrogen-containing compound.

4. The resist pattern-forming method according to claim 2 , wherein the resist underlayer film-forming composition further comprises (C) a photoacid generator.

5. The resist pattern-forming method according to claim 2 , wherein the resist underlayer film-forming composition further comprises (B) a nitrogen-containing compound, and (C) a photoacid generator.

6. The resist pattern-forming method according to claim 1 , wherein the resist underlayer film-forming composition further comprises (B) a nitrogen-containing compound.

7. The resist pattern-forming method according to claim 1 , wherein the resist underlayer film-forming composition further comprises (C) a photoacid generator.

8. The resist pattern-forming method according to claim 1 , wherein the polymer (a1) comprises a structural unit (I) shown by formula (1),

wherein R represents a hydrogen atom or a methyl group; and each of R p1 , R p2 , and R p3 individually represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; or R p1 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms, and R p2 and R p3 bond to each other to form a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms together with a carbon atom bonded to R p2 and R p3 .

9. The resist pattern-forming method according to claim 1 , wherein the polymer (a2) does not comprise an acid-labile group.

10. The resist pattern-forming method according to claim 1 , the resist pattern-forming method being used to form a trench pattern, a hole pattern or both thereof.

11. The resist pattern-forming method according to claim 1 , wherein a content of the at least one organic solvent in the developer is 60 mass % or more based on a total amount of the developer.

12. The resist pattern-forming method according to claim 1 ,

wherein a content of the at least one organic solvent in the developer is 80 mass % or more based on a total amount of the developer.

13. The resist pattern-forming method according to claim 1 ,

wherein a content of the at least one organic solvent in the developer is 90 mass % or more based on a total amount of the developer.

14. The resist pattern-forming method according to claim 1 , wherein the resist underlayer film-forming composition further comprises (B) a nitrogen-containing compound, and (C) a photoacid generator.

15. The resist pattern-forming method according to claim 1 , wherein the radiation-sensitive resin composition further comprises an acid generator and an acid diffusion controller which comprises a photodegradable base.

16. The resist pattern-forming method according to claim 1 , wherein the resist underlayer film-forming composition further comprises water.

17. A resist pattern-forming method comprising:

applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film, the resist underlayer film-forming composition comprising (A) a polysiloxane and (D) a solvent;

applying a radiation-sensitive resin composition to the resist underlayer film to form a resist film, the radiation-sensitive resin composition comprising:

(a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid; and

(a2) a fluorine-containing polymer,

exposing the resist film; and

developing the exposed resist film using a developer that comprises at least one organic solvent selected from the group consisting of an alcohol, an ether, a ketone, an amide, an ester and a hydrocarbon.