Method of manufacturing semiconductor device and chemical liquid
A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to forma solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.
1. A method of manufacturing a semiconductor device comprising:
attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein;
substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a precipitating material dissolved in a second liquid;
vaporizing the second liquid and precipitating the precipitating material to the surface of the semiconductor substrate; and
removing the precipitating material by transforming the precipitating material from solid to gas by depressurization and/or heating,
the precipitating material comprising at least one material selected from a group consisting of:
materials represented by chemical formulae A1, A2, A3, and A4 indicated in FIG. 5A , FIG. 5B , FIG. 5C , and FIG. 5D where X 1 , X 2 , and X 3 in the chemical formulae A1, A2, A3, and A4 each independently represent either of a hydroxy group (—OH), a carboxyl group (—COOH), an amino group (—NH 2 ), an amide group (—CONH 2 ), a nitro group (—NO 2 ), and a methylester group (—COO—CH 3 ), and
materials represented by chemical formulae B1, B2, B3, B4, and B5 indicated in FIG. 6A , FIG. 6B , FIG. 6C , FIG. 6D , and FIG. 6E where X 1 , X 2 , X 3 , and X 4 in the chemical formulae B 1 , B2, B3, B4 and B5 each independently represent either of a hydroxy group (—OH), a carboxyl group (—COOH), an amino group (—NH 2 ), an amide group (—CONH 2 ), a nitro group (—NO 2 ), a methylester group (—COO—CH 3 ), a methoxy group (—OCH 3 ), an ethoxy group (—OCH 2 CH 3 ), and a propoxy group (—OCH 2 CH 2 CH 3 ),
in the materials represented by chemical formulae A1, A4, B1, B3, and B5, a group bonded to one of adjacent bonding sites is a carboxyl group and one or more groups bonded to the other of the adjacent bonding sites include a carboxyl group, a hydroxyl group, or an amino group.
2. A method of manufacturing a semiconductor device comprising:
attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein;
substituting the first liquid attached to the surface of the semiconductor substrate with a third liquid;
substituting the third liquid with a solution, the solution comprising a precipitating material dissolved in a second liquid;
vaporizing the second liquid and precipitating the precipitating material to the surface of the semiconductor substrate; and
removing the precipitating material by transforming the precipitating material from solid to gas by depressurization and/or heating,
the third liquid having affinity for the first liquid and for the second liquid,
the precipitating material comprising at least one material selected from a group consisting of:
materials represented by chemical formulae A1, A2, A3, and A4 indicated in FIG. 5A , FIG. 5B , FIG. 5C , and FIG. 5D where X 1 , X 2 , and X 3 in the chemical formulae A1, A2, A3, and A4 each independently represent either of a hydroxy group (—OH), a carboxyl group (—COOH), an amino group (—NH 2 ), an amide group (—CONH 2 ), a nitro group (—NO 2 ), and a methylester group (—COO—CH 3 ), and
materials represented by chemical formulae B1, B2, B3, B4, and B5 indicated in FIG. 6A , FIG. 6B , FIG. 6C , FIG. 6D , and FIG. 6E where X 1 , X 2 , X 3 , and X 4 in the chemical formulae B1, B2, B3, B4 and B5 each independently represent either of a hydroxy group (—OH), a carboxyl group (—COOH), an amino group (—NH 2 ), an amide group (—CONH 2 ), a nitro group (—NO 2 ), a methylester group (—COO—CH 3 ), a methoxy group (—OCH 3 ), an ethoxy group (—OCH 2 CH 3 ), and a propoxy group (—OCH 2 CH 2 CH 3 ),
in the materials represented by chemical formulae A1, A4, B1, B3, and B5, a group bonded to one of adjacent bonding sites is a carboxyl group and one or more groups bonded to the other of the adjacent bonding sites include a carboxyl group, a hydroxyl group, or an amino group.
3. The method according to claim 1 , wherein the precipitating material comprises a material having at least two carboxyl groups bonded to cyclohexane.
4. The method according to claim 2 , wherein the precipitating material comprises a material having at least two carboxyl groups bonded to cyclohexane.
5. The method according to claim 1 , wherein the precipitating material comprises two carboxyl groups bonded to benzene, bonding sites of the two carboxyl groups being adjacent to one another.
6. The method according to claim 2 , wherein the precipitating material comprises two carboxyl groups bonded to benzene, bonding sites of the two carboxyl groups being adjacent to one another.
7. The method according to claim 1 , wherein the chemical formula A1 represents cyclohexane-1, 2-dicarboxylic acid, the chemical formula A4 represents cyclohexane-1, 2, 4-tri carboxylic acid, the chemical formula B1 represents phthalic acid and the chemical formula B3 represents a material including either of barinin, 4-hydroxyphthalic acid, trimellitic acid, and trimellitic anhydride.
8. The method according to claim 2 , wherein the chemical formula A1 represents cyclohexane-1, 2-dicarboxylic acid, the chemical formula A4 represents cyclohexane-1, 2, 4-tricarboxylic acid, the chemical formula B1 represents phthalic acid and the chemical formula B3 represents a material including either of barinin, 4-hydroxyphthalic acid, trimellitic acid, and trimellitic anhydride.
9. The method according to claim 1 , wherein the first liquid comprises at least one material selected from a group consisting of aliphatic hydrocarbon, aromatic hydrocarbon, esters, ketones, alcohols and ethers, polyalcohols, and pyrrolidone solvent.
10. The method according to claim 2 , wherein the first liquid comprises at least one material selected from a group consisting of aliphatic hydrocarbon, aromatic hydrocarbon, esters, ketones, alcohols and ethers, polyalcohols, and pyrrolidone solvent.
11. The method according to claim 1 , wherein the second liquid comprises at least one material selected from a group consisting of aliphatic hydrocarbon, aromatic hydrocarbon, esters, ketones, alcohols and ethers, polyalcohols, and pyrrolidone solvent.
12. The method according to claim 2 , wherein the second liquid comprises at least one material selected from a group consisting of aliphatic hydrocarbon, aromatic hydrocarbon, esters, ketones, alcohols and ethers, polyalcohols, and pyrrolidone solvent.
13. The method according to claim 1 , wherein the second liquid comprises at least one material selected from a group consisting of water, methanol, ethanol, IPA (isopropyl alcohol), butanol, propanol, ethylene glycol, propylene glycol, NMP (N-methyl-2-pyrrolidone), DMF (N, N-dimethyformamide), DMA (N, N-dimethylacetamide) and DMSO (dimethylsulfoxide), hexane, toluene, propyleneglycol monomethylether acetate (PGMEA), propyleneglycol monomethylether (PGME), propyleneglycol monopropylether (PGPE), propyleneglycol monoethylether (PGEE), gamma butyrolactone (GBL), acetylacetone, 3-pentanone, 2-pentanone, ethyl lactate, cyclohexanone, dibutylether, hydrofluoroether (HFE), ethyl nonafluoroisobutyl ether, ethyl nonafluorobutyl ether, m-xylenehexafluoride, cyclohexane, formic acid, acetic acid, pyridine, diethylamine, dimethylamine, ethylenediamine, triethylamine, dimethylacetamide, diethylacetamide, and formamide.
14. The method according to claim 2 , wherein the second liquid comprises at least one material selected from a group consisting of water, methanol, ethanol, IPA (isopropyl alcohol), butanol, propanol, ethylene glycol, propylene glycol, NMP (N-methyl-2-pyrrolidone), DMF (N, N-dimethyformamide), DMA (N, N-dimethylacetamide) and DMSO (dimethylsulfoxide), hexane, toluene, propyleneglycol monomethylether acetate (PGMEA), propyleneglycol monomethylether (PGME), propyleneglycol monopropylether (PGPE), propyleneglycol monoethylether (PGEE), gamma butyrolactone (GBL), acetyl acetone, 3-pentanone, 2-pentanone, ethyl lactate, cyclohexanone, di butyl ether, hydrofluoroether (HFE), ethyl nonafluoroisobutyl ether, ethyl nonafluorobutyl ether, m-xylenehexafluoride, cyclohexane, formic acid, acetic acid, pyridine, diethylamine, dimethylamine, ethylenediamine, triethylamine, dimethylacetamide, diethylacetamide, and formamide.
15. A chemical liquid used for drying a semiconductor device, the chemical liquid comprising:
a precipitating material dissolved in a liquid including at least one material selected from the group consisting of aliphatic hydrocarbon, aromatic hydrocarbon, esters, ketones, alcohols and ethers, polyalcohols, and pyrrolidone solvent, the precipitating material including at least one material selected from a group consisting of:
materials represented by chemical formulae A1, A2, A3, and A4 indicated in FIG. 5A , FIG. 5B , FIG. 5C , and FIG. 5D where X 1 , X 2 , and X 3 in the chemical formulae A1, A2, A3, and A4 each independently represent either of a hydroxy group (—OH), a carboxyl group (—COOH), an amino group (—NH 2 ), an amide group (—CONH 2 ), a nitro group (—NO 2 ), and a methylester group (—COO—CH 3 ), and
materials represented by chemical formulae B1, B2, B3, B4, and B5 indicated in FIG. 6A , FIG. 6B , FIG. 6C , FIG. 6D , and FIG. 6E where X 1 , X 2 , X 3 , and X 4 in the chemical formulae B 1 , B2, B3, B4 and B5 each independently represent either of a hydroxy group (—OH), a carboxyl group (—COOH), an amino group (—NH 2 ), an amide group (—CONH 2 ), a nitro group (—NO 2 ), a methylester group (—COO—CH 3 ), a methoxy group (—OCH 3 ), an ethoxy group (—OCH 2 CH 3 ), and a propoxy group (—OCH 2 CH 2 CH 3 ),
in the materials represented by chemical formulae A1, A4, B1, B3, and B5, a group bonded to one of adjacent bonding sites is a carboxyl group and one or more groups bonded to the other of the adjacent bonding sites include a carboxyl group, a hydroxyl group, or an amino group.
16. The chemical liquid according to claim 15 , wherein the precipitating material comprises a material having at least two carboxyl groups bonded to cyclohexane.
17. The chemical liquid according to claim 15 , wherein the precipitating material comprises two carboxyl groups bonded to benzene, bonding sites of the two carboxyl groups being adjacent to one another.
18. The chemical liquid according to claim 15 , wherein the chemical formula A1 represents cyclohexane-1, 2-dicarboxylic acid, the chemical formula A4 represents cyclohexane-1, 2, 4-tricarboxylic acid, the chemical formula B1 represents phthalic acid and the chemical formula B3 represents a material including either of barinin, 4-hydroxyphthalic acid, trimellitic acid, and trimellitic anhydride.
19. The chemical liquid according to claim 15 comprising at least one material selected from a group consisting of water, methanol, ethanol, IPA (isopropyl alcohol), butanol, propanol, ethylene glycol, propylene glycol, NMP (N-methyl-2-pyrrolidone), DMF (N, N-dimethyformamide), DMA (N, N-dimethylacetamide) and DMSO (dimethylsulfoxide), hexane, toluene, propyleneglycol monomethylether acetate (PGMEA), propyleneglycol monomethylether (PGME), propyleneglycol monopropylether (PGPE), propyleneglycol monoethylether (PGEE), gamma butyrolactone (GBL), acetylacetone, 3-pentanone, 2-pentanone, ethyl lactate, cyclohexanone, dibutylether, hydrofluoroether (HFE), ethyl nonafluoroisobutyl ether, ethyl nonafluorobutyl ether, m-xylenehexafluoride, cyclohexane, formic acid, acetic acid, pyridine, diethylamine, dimethylamine, ethylenediamine, triethylamine, dimethylacetamide, diethylacetamide, and formamide.