Implanted photoresist stripping process
Processes for removing a photoresist from a substrate after, for instance, ion implantation are provided. In one example implementation, a process can include placing a substrate having a bulk photoresist and a crust formed on the bulk photoresist in a processing chamber. The process can include initiating a first strip process in the processing chamber. The process can include accessing an optical emission signal associated with a plasma during the first strip process. The process can include identifying an endpoint for the first strip process based at least in part on the optical emission signal. The process can include terminating the first strip process based at least in part on the endpoint. The process can include initiating a second strip process to remove the photoresist from the substrate.
1. A process for removal of photoresist from a substrate, comprising:
placing a substrate having a bulk photoresist and a crust formed on the bulk photoresist in a processing chamber;
initiating a first strip process in the processing chamber;
accessing an optical emission signal associated with a plasma during the first strip process, wherein the optical emission signal comprises a high emission phase followed by a drop to a low emission phase, the high emission phase associated with higher optical emission relative to the low emission phase;
identifying an endpoint associated with removal of at least a portion of the crust based at least in part on the optical emission signal, wherein the endpoint corresponds to a point in the optical emission signal indicative of removal of a top portion of the crust, and the point in the optical emission signal indicative of removal of the top portion of the crust is within a threshold of a local minimum occurring during the high emission phase of the optical emission signal;
terminating the first strip process based at least in part on the endpoint; and
initiating a second strip process to remove the photoresist from the substrate.
2. The process of claim 1 , wherein the first strip process is operable to remove at least a portion of the crust from the bulk photoresist.
3. The process of claim 1 , wherein the second strip process is operable to remove at least a portion of the bulk photoresist.
4. The process of claim 2 , wherein the first strip process is a plasma strip process that exposes the substrate to a plasma induced in the processing chamber.
5. The process of claim 3 , wherein the second strip process is a wet strip process.
6. The process of claim 1 , wherein the optical emission signal is associated with a one or more wavelengths in the range of about 300 nm to about 800 nm.
7. The process of claim 1 , wherein the endpoint corresponds to a point in the optical emission signal indicative of removal of the crust.
8. The process of claim 7 , wherein the point in the optical emission signal indicative of removal of the crust is within a threshold of a local minimum following the drop in the optical emission signal from the high emission phase.
9. The process of claim 1 , wherein the process comprises performing a subsequent treatment process following the second strip process.
10. The process of claim 1 , wherein a subsequent treatment process after the process for removal of photoresist from the substrate comprises an annealing process.
11. The process of claim 1 , wherein the crust is formed during an ion implantation process.
12. A process for removing photoresist from a substrate, comprising:
placing a substrate having a bulk photoresist and a crust formed on the bulk photoresist layer in a plasma processing chamber;
initiating a plasma strip process in the plasma processing chamber;
terminating the plasma strip process at an endpoint corresponding to a point in an optical emission signal indicative of removal of the crust, wherein the optical emission signal comprises a high emission phase followed by a drop to a low emission phase, the high emission phase associated with higher optical emission relative to the low emission phase, the endpoint corresponds to a point in the optical emission signal indicative of removal of a top portion of the crust, and the point in the optical emission signal indicative of removal of the top portion of the crust is within a threshold of a local minimum occurring during the high emission phase of the optical emission signal; and
after terminating the plasma strip process, initiating a wet strip process to remove the bulk photoresist from the substrate.
13. The process of claim 12 , wherein the point in the optical emission signal indicative of removal of the crust is within a threshold of a local minimum following the drop in the optical emission signal from the high emission phase.
14. A strip process for removing photoresist from a substrate, comprising:
placing a substrate having a bulk photoresist and a crust formed on the bulk photoresist layer in a plasma processing chamber;
initiating a plasma strip process in the plasma processing chamber;
terminating the plasma strip process at an endpoint corresponding to a point in an optical emission signal indicative of removal of a top portion of the crust, wherein the optical emission signal comprises a high emission phase followed by a drop to a low emission phase, the high emission phase associated with higher optical emission relative to the low emission phase, the endpoint corresponds to a point in the optical emission signal indicative of removal of a top portion of the crust, and the point in the optical emission signal indicative of removal of the top portion of the crust is within a threshold of a local minimum occurring during the high emission phase of the optical emission signal; and
after terminating the plasma strip process, initiating a wet strip process to remove the bulk photoresist and remainder of the crust from the substrate.