Metal landing method for RRAM technology
The present disclosure relates to an integrated circuit having an interconnect wire contacting an upper electrode of the RRAM (resistive random access memory) device, and a method of formation. In some embodiments, the integrated circuit comprises an RRAM device having a dielectric data storage layer disposed between a lower electrode and an upper electrode. An interconnect wire contacts an upper surface of the upper electrode, and an interconnect via is arranged onto the interconnect wire. The interconnect via is set back from one or more outermost sidewalls of the interconnect wire. The interconnect wire has a relatively large size that provides for a good electrical connection between the interconnect wire and the upper electrode, thereby increasing a process window of the RRAM device.
1. An integrated chip, comprising:
a resistive random access memory (RRAM) device arranged over a substrate and comprising a dielectric data storage layer disposed between a lower electrode and an upper electrode;
an upper interconnect wire physically contacting an upper surface of the upper electrode along an interface continuously extending from a first outer edge of the RRAM device to a second outer edge of the RRAM device;
an interconnect via arranged onto the upper interconnect wire; and
a first interconnect wire arranged over the substrate at a location that is laterally offset from the upper interconnect wire, wherein the first interconnect wire has a height that is smaller than a height of the upper interconnect wire.
2. The integrated chip of claim 1 , wherein the upper interconnect wire extends past opposing outermost sidewalls of the RRAM device.
3. The integrated chip of claim 1 , further comprising an inter-level dielectric (ILD) layer surrounding the first interconnect wire, the upper interconnect wire, and the RRAM device.
4. The integrated chip of claim 1 , wherein the upper interconnect wire extends below the upper surface of the upper electrode.
5. The integrated chip of claim 1 , further comprising: an ILD layer surrounding the RRAM device and the upper interconnect wire, wherein the upper interconnect wire extends to a top surface of the ILD layer.
6. The integrated chip of claim 5 , wherein a bottom surface of the first interconnect wire is arranged along a horizontal plane that intersects sidewalls of the upper interconnect wire.
7. The integrated chip of claim 5 , further comprising:
a first etch stop layer arranged along a bottom surface of the ILD layer and a second etch stop layer arranged along the top surface of the ILD layer, wherein the ILD layer continuously extends between the first etch stop layer and the second etch stop layer.
8. The integrated chip of claim 1 , wherein the upper interconnect wire has a planar upper surface extending between outermost sidewalls of the upper interconnect wire.
9. An integrated chip, comprising:
a lower interconnect structure surrounded by a first inter-level dielectric (ILD) layer arranged over a substrate;
a resistive random access memory (RRAM) device arranged over the lower interconnect structure and surrounded by a second ILD layer, wherein the RRAM device comprises a dielectric data storage layer disposed between a lower electrode and an upper electrode;
an upper interconnect wire contacting an upper surface of the upper electrode, wherein the upper interconnect wire extends past opposing outermost sidewalls of the RRAM device; and
a first interconnect wire arranged over the substrate at a location that is laterally offset from the upper interconnect wire, wherein the first interconnect wire has a height that is larger than a height of the upper interconnect wire.
10. The integrated chip of claim 9 , wherein the upper interconnect wire extends below an upper surface of the RRAM device.
11. The integrated chip of claim 9 , wherein the upper interconnect wire extends from the upper surface of the upper electrode to a top surface of the second ILD layer.
12. The integrated chip of claim 9 , further comprising
an etch stop layer arranged between the first ILD layer and the second ILD layer.
13. The integrated chip of claim 12 , wherein the etch stop layer extends along the outermost sidewalls of the RRAM device.
14. The integrated chip of claim 9 , further comprising:
sidewall spacers arranged along sidewalls of the RRAM device, wherein upper portions of the sidewall spacers are arranged laterally between the upper interconnect wire and the outermost sidewalls of the RRAM device.
15. The integrated chip of claim 1 , further comprising:
sidewall spacers arranged along sidewalls of the RRAM device, wherein upper portions of the sidewall spacers are arranged laterally between the upper interconnect wire and the sidewalls of the RRAM device.
16. The integrated chip of claim 15 , further comprising:
an etch stop layer extending along the sidewall spacers, wherein the sidewall spacers protrude outward above an uppermost surface of the etch stop layer.
17. The integrated chip of claim 1 , wherein the upper interconnect wire continuously extends from directly below the interconnect via to past opposing outermost sidewalls of the interconnect via.
18. The integrated chip of claim 1 ,
wherein the upper interconnect wire has a first width along a direction parallel to an upper surface of the substrate and the interconnect via has a second width along the direction; and
wherein the first width is larger than the second width.
19. An integrated chip, comprising:
a resistive random access memory (RRAM) device arranged over a substrate and comprising a dielectric data storage layer disposed between a lower electrode and an upper electrode;
an upper interconnect wire having a lower surface physically contacting an upper surface of the upper electrode, wherein the lower surface continuously extends between sidewalls of the upper interconnect wire that extend below the upper surface of the upper electrode;
sidewall spacers arranged along sidewalls of the RRAM device, wherein upper portions of the sidewall spacers are arranged laterally between the upper interconnect wire and the sidewalls of the RRAM device; and
an etch stop layer extending along the sidewall spacers, wherein the sidewall spacers protrude outward above an uppermost surface of the etch stop layer.
20. The integrated chip of claim 19 ,
wherein the sidewall spacers contact both the sidewalls of the RRAM device and the sidewalls of the upper interconnect wire.