IP Library › Patent Application 15444864
Patent Application
App. No. 15/444,864

Amorphous Layer Extreme Ultraviolet Lithography Blank, And Manufacturing And Lithography Systems Therefor

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Quick Facts
Patent No.
US None
App. No.
15/444,864
Abstract

An integrated extreme ultraviolet blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a deposition system for depositing a multi-layer stack without removing the substrate from the vacuum; and a treatment system for treating a layer on the multi-layer stack to be deposited as an amorphous metallic layer. A physical vapor deposition chamber for manufacturing an extreme ultraviolet mask blank includes: a target, comprising molybdenum alloyed with boron. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a multi-layer stack having an amorphous metallic layer; and a wafer stage for placing a wafer. An extreme ultraviolet blank includes: a substrate; a multi-layer stack having an amorphous metallic layer; and capping layers over the multi-layer stack.

Claims (40)

1 . An integrated extreme ultraviolet blank production system comprising:

a vacuum chamber for placing a substrate in a vacuum;

a deposition system for depositing a multi-layer stack without removing the substrate from the vacuum; and

a treatment system for treating a layer on the multi-layer stack to be deposited as an amorphous metallic layer.

2 . The system as claimed in claim 1 wherein the treatment system includes an alloyed deposition of the amorphous metallic layer.

3 . The system as claimed in claim 1 wherein the treatment system provides a gas to disrupt a crystalline structure of the amorphous metallic layer.

4 . The system as claimed in claim 1 wherein the treatment system cools the multi-layer stack to suppress grain growth of the amorphous metallic layer.

5 . The system as claimed in claim 1 wherein the deposition system includes a magnetron for sputtering the multi-layer stack.

6 . The system as claimed in claim 1 further comprising a second deposition system is for depositing additional layers to form an extreme ultraviolet mask blank.

7 . The system as claimed in claim 1 further comprising a second deposition system is for depositing additional layers to form an extreme ultraviolet mirror.

8 . A physical vapor deposition chamber for manufacturing an extreme ultraviolet blank comprising:

a target, comprising molybdenum alloyed with boron.

9 . The chamber of claim 8 further comprising:

a second target, comprising silicon.

10 . The chamber of claim 9 wherein the target and the second target are angled with respect to a pedestal adapted to receive a substrate.

11 . The chamber of claim 8 further comprising a rotating pedestal adapted to receive a substrate.

12 . An extreme ultraviolet lithography system comprising:

an extreme ultraviolet light source;

a mirror for directing light from the extreme ultraviolet light source;

a reticle stage for placing an extreme ultraviolet mask blank with a multi-layer stack having an amorphous metallic layer; and

a wafer stage for placing a wafer.

13 . The system as claimed in claim 12 wherein the amorphous metallic layer is alloyed to form the amorphous metallic layer.

14 . The system as claimed in claim 12 wherein the amorphous metallic layer has a disrupted crystalline structure to form the amorphous metallic layer.

15 . The system as claimed in claim 12 wherein the amorphous metallic layer has suppressed grain growth to form the amorphous metallic layer.

16 . A method of making an extreme ultraviolet blank comprising:

providing a substrate;

forming a multi-layer stack having an amorphous metallic layer over the substrate;

and

forming capping layers over the multi-layer stack.

17 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer forms an alloyed amorphous metallic layer.

18 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer deposits the amorphous metallic layer by sputtering the metal with an alloy.

19 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer deposits the amorphous metallic layer by sputtering while cooling the substrate.

20 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer forms the amorphous metallic layer alloyed with boron, nitrogen, or carbon.

21 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer forms the amorphous metallic layer of amorphous molybdenum.

22 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer forms the amorphous metallic layer of a disrupted crystalline structure.

23 . The method as claimed in claim 16 wherein forming the multi-layer stack having the amorphous metallic layer forms the amorphous metallic layer having suppressed grain growth.

24 . The method as claimed in claim 16 wherein forming the multi-layer stack forms an extreme ultraviolet mask blank.

25 . The method as claimed in claim 16 wherein forming the multi-layer stack forms an extreme ultraviolet mirror.

26 . The method as claimed in claim 16 wherein providing the substrate provides a substrate of an ultra-low thermal expansion material.

27 . The method as claimed in claim 16 wherein providing the substrate provides a substrate of glass.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2017
From: HOFMANN, RALF; MORAES, KEVIN
To: APPLIED MATERIALS, INC.
Reel/Frame 044246/0355 →