Fabrication of semiconductor junctions
A method comprises providing a cavity structure on the substrate comprising a first growth channel extending in a first direction, a second growth channel extending in a second direction, wherein the second direction is different from the first direction and the second channel is connected to the first channel at a channel junction, a first seed surface in the first channel, at least one opening for supplying precursor materials to the cavity structure, selectively growing from the first seed surface a first semiconductor structure substantially only in the first direction and in the first channel, thereby forming a second seed surface for a second semiconductor structure at the channel junction, growing in the second channel the second semiconductor structure in the second direction from the second seed surface, thereby forming the semiconductor junction comprising the first and the second semiconductor structure.
1. A semiconductor device comprising a semiconductor junction, the semiconductor junction comprising:
a first semiconductor structure grown in a first direction from a first seed in a first cavity, the first semiconductor structure abutting the first seed, the first semiconductor structure comprising a different material from the first seed; and
a second semiconductor structure grown in a second direction in a second cavity from a seed surface of the first semiconductor structure such that the first semiconductor structure is a second seed abutting the second semiconductor structure, wherein the second direction is perpendicular to the first direction.
2. The semiconductor device according to claim 1 , wherein the semiconductor device is a photodiode or a light emitting device.
3. The semiconductor device according to claim 1 , wherein a channel junction is formed at an intersection of the first cavity and the second cavity.
4. The semiconductor device according to claim 1 , wherein the second semiconductor structure extends to form two arms opposite one another in the second direction in the second cavity.
5. The semiconductor device according to claim 1 , wherein the first seed comprises silicon.
6. The semiconductor device according to claim 1 , wherein the first semiconductor structure comprises a higher carrier mobility than the first seed.