Silicon germanium alloy fins with reduced defects
A silicon germanium alloy is formed on sidewall surfaces of a silicon fin. An oxidation process or a thermal anneal is employed to convert a portion of the silicon fin into a silicon germanium alloy fin. In some embodiments, the silicon germanium alloy fin has a wide upper portion and a narrower lower portion. In such an embodiment, the wide upper portion has a greater germanium content than the narrower lower portion. In other embodiments, the silicon germanium alloy fin has a narrow upper portion and a wider lower portion. In this embodiment, the narrow upper portion of the silicon germanium alloy fin has a greater germanium content than the wider lower portion of the silicon germanium alloy fin.
1. A semiconductor structure comprising:
a silicon fin portion extending upward from a remaining portion of a silicon substrate; and
a silicon germanium alloy fin located directly on a topmost surface of said silicon fin portion and comprising a wide upper portion and a narrower lower portion, wherein said silicon germanium alloy fin has a vertically graded germanium content in which said wide upper portion of said silicon germanium alloy fin has a greater germanium content than said narrower lower portion of said silicon germanium alloy fin and wherein sidewall surfaces of said narrower lower portion of said silicon germanium alloy fin are vertically aligned with sidewall surfaces of said silicon fin portion.
2. The semiconductor structure of claim 1 , further comprising a silicon oxide portion located on said vertical sidewalls of said narrower lower portion of said silicon germanium alloy fin and sidewall surfaces of said silicon fin portion.
3. The semiconductor structure of claim 2 , further comprising a trench isolation structure located on physically exposed surfaces of said remaining portion of said silicon substrate and adjacent said silicon germanium alloy fin, said trench isolation structure has a height that is less than a height of said silicon germanium alloy fin.
4. The semiconductor structure of claim 3 , wherein said trench isolation structure has a topmost surface that is coplanar with a topmost surface of said silicon oxide portion.
5. The semiconductor structure of claim 4 , further comprising a functional gate structure straddling said wide upper portion of said silicon germanium alloy fin.
6. The semiconductor structure of claim 5 , wherein a portion of said functional gate structure extends onto said topmost surfaces of said silicon oxide portion and said trench isolation structure.
7. The semiconductor structure of claim 1 , wherein said wide upper portion of said silicon germanium alloy fin has a defect density that is less than a defect density of said narrower lower portion of said silicon germanium alloy fin.
8. The semiconductor structure of claim 1 , wherein said silicon germanium alloy fin has a germanium content of from 20 atomic percent to 80 atomic percent.
9. The semiconductor structure of claim 2 , wherein a bottommost surface of said silicon oxide portion contacts a surface of said remaining portion of said silicon substrate.
10. The semiconductor structure of claim 1 , further comprising a trench isolation structure located on physically exposed surfaces of said remaining portion of said silicon substrate and directly contacting both said silicon fin portion and a lower portion of said silicon germanium alloy fin, said trench isolation structure has a height that is less than a height of said silicon germanium alloy fin.