Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device may include: performing a cycle a predetermined number of times to form an oxynitride film on a substrate, the cycle including: (a) supplying a source gas to the substrate via a first nozzle; and (b) supplying a nitriding gas and an oxidizing gas to the substrate via a second nozzle different from the first nozzle, wherein (a) and (b) are performed non-simultaneously, wherein (b) may include: (b-1) supplying only the oxidizing gas while suspending a supply of the nitriding gas; and (b-2) simultaneously supplying the nitriding gas and the oxidizing gas, wherein (b-1) and (b-2) are consecutively performed.
1. A method of manufacturing a semiconductor device, comprising:
performing a cycle a predetermined number of times to form an oxynitride film on a substrate, the cycle comprising: (a) supplying a source gas to the substrate via a first nozzle; and (b) supplying a nitriding gas and an oxidizing gas to the substrate via a second nozzle different from the first nozzle, wherein (a) and (b) are performed non-simultaneously,
wherein (b) comprises: (b-1) supplying only the oxidizing gas while suspending a supply of the nitriding gas; and (b-2) simultaneously supplying the nitriding gas and the oxidizing gas, wherein (b-1) and (b-2) are consecutively performed.
2. The method of claim 1 , wherein (b-1) comprises at least one of: (b-1-1) supplying the oxidizing gas before supplying the nitriding gas; and (b-1-2) supplying the oxidizing gas after suspending the supply of the nitriding gas.
3. The method of claim 1 , wherein (b-1) comprises: (b-1-1) supplying the oxidizing gas before supplying the nitriding gas, and (b-1-1) and (b-2) are consecutively performed in (b).
4. The method of claim 1 , wherein (b-1) comprises: (b-1-2) supplying the oxidizing gas after suspending the supply of the nitriding gas, and (b-2) and (b-1-2) are consecutively performed in (b).
5. The method of claim 1 , wherein (b-1) comprises: (b-1-1) supplying the oxidizing gas before supplying the nitriding gas; and (b-1-2) supplying the oxidizing gas after suspending the supply of the nitriding gas, and (b-1-1), (b-2) and (b-1-2) are consecutively performed in (b).
6. The method of claim 1 , wherein (b) further comprises (b-3) suspending both of the supply of the nitriding gas and a supply of the oxidizing gas.
7. The method of claim 2 , wherein at least a portion of a layer formed on the substrate before performing (b-1-1) is oxidized by performing (b-1-1).
8. The method of claim 2 , wherein at least a portion of a layer formed on the substrate before performing (b-1-2) is oxidized by performing (b-1-2) and a portion of nitrogen in the layer formed on the substrate before performing (b-1-2) is removed by performing (b-1-2).
9. The method of claim 1 , wherein a composition ratio of the oxynitride film is controlled by adjusting a condition of supplying the oxidizing gas in (b-1).
10. The method of claim 2 , wherein a composition ratio of the oxynitride film is controlled by adjusting a condition of supplying the oxidizing gas in (b-1-1).
11. The method of claim 2 , wherein a composition ratio of the oxynitride film is controlled by adjusting a condition of supplying the oxidizing gas in (b-1-2).
12. The method of claim 5 , wherein a condition of supplying the oxidizing gas in (b-1-2) is different from a condition of supplying the oxidizing gas in (b-1-1).
13. The method of claim 1 , wherein the cycle further comprises supplying to the substrate a gas containing at least one element selected from a group consisting of carbon and boron.