Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, comprising:

forming a seed layer containing oxygen and carbon on a substrate;

forming a nitride film containing no oxygen and carbon on the seed layer; and

forming a nitride layer containing carbon as a cap layer on the nitride film by:

performing, a predetermined number of times, a cycle of non-simultaneously performing a process of supplying a precursor gas to the substrate, a process of supplying a carbon-containing gas to the substrate, and a process of supplying a nitrogen-containing gas to the substrate; or

performing, a predetermined number of times, a cycle of non-simultaneously performing a process of supplying a precursor gas to the substrate and a process of supplying a gas containing carbon and nitrogen to the substrate; or

performing, a predetermined number of times, a cycle of non-simultaneously performing a process of supplying a precursor gas containing carbon to the substrate and a process of supplying a nitrogen-containing gas to the substrate.

2. The method of claim 1 , wherein in the act of forming the nitride layer containing carbon, the cycle of non-simultaneously performing the process of supplying the precursor gas to the substrate and the process of supplying the gas containing carbon and nitrogen to the substrate is performed a predetermined number of times, and an amine-based gas or an organic hydrazine-based gas is used as the gas containing carbon and nitrogen.

3. The method of claim 1 , wherein in the act of forming the nitride layer containing carbon, the cycle of non-simultaneously performing the process of supplying the precursor gas to the substrate and the process of supplying the gas containing carbon and nitrogen to the substrate is performed a predetermined number of times, and an amine-based gas is used as the gas containing carbon and nitrogen.

4. The method of claim 1 , wherein a thickness of the cap layer is set within a range from 0.05 nm to 0.3 nm.

5. The method of claim 1 , wherein a thickness of the cap layer is set within a range from 0.1 nm to 0.2 nm.

6. The method of claim 1 , wherein the substrate with the cap layer formed thereon is exposed to an atmosphere to introduce oxygen contained in the atmosphere into the cap layer so as to modify at least a portion of the cap layer to a nitride layer containing oxygen and carbon.

7. The method of claim 1 , wherein the nitride film is formed by performing, a predetermined number of times, a cycle of simultaneously or non-simultaneously performing a process of supplying a precursor gas to the substrate and a process of supplying a nitrogen-containing gas to the substrate.

8. The method of claim 1 , wherein the nitride film is formed on an oxide film, which is formed on the surface of the substrate, by performing, a predetermined number of times, a cycle of simultaneously or non-simultaneously performing a process of supplying a precursor gas to the substrate and a process of supplying a nitrogen-containing gas to the substrate.

9. A substrate processing apparatus, comprising:

a process chamber in which a substrate is processed;

a supply system configured to supply gas to the substrate in the process chamber; and

a control part configured to control the supply system to perform, after forming a seed layer containing oxygen and carbon on a substrate and forming a nitride film containing no oxygen and carbon on the seed layer, forming a nitride layer containing carbon as a cap layer on the nitride film by:

performing, a predetermined number of times, a cycle of non-simultaneously performing a process of supplying a precursor gas to the substrate, a process of supplying a carbon-containing gas to the substrate, and a process of supplying a nitrogen-containing gas to the substrate; or

performing, a predetermined number of times, a cycle of non-simultaneously performing a process of supplying a precursor gas to the substrate and a process of supplying a gas containing carbon and nitrogen to the substrate; or

performing, a predetermined number of times, a cycle of non-simultaneously performing a process of supplying a precursor gas containing carbon to the substrate and a process of supplying a nitrogen-containing gas to the substrate.

10. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process comprising:

forming a seed layer containing oxygen and carbon on a substrate;

forming a nitride film containing no oxygen and carbon on the seed layer; and

forming a nitride layer containing carbon as a cap layer on the nitride film by:

performing, a predetermined number of times, a cycle of non-simultaneously performing a process of supplying a precursor gas to the substrate, a process of supplying a carbon-containing gas to the substrate, and a process of supplying a nitrogen-containing gas to the substrate; or

performing, a predetermined number of times, a cycle of non-simultaneously performing a process of supplying a precursor gas to the substrate and a process of supplying a gas containing carbon and nitrogen to the substrate; or

performing, a predetermined number of times, a cycle of non-simultaneously performing a process of supplying a precursor gas containing carbon to the substrate and a process of supplying a nitrogen-containing gas to the substrate.