IP Library Granted Patent US 10,866,912
Granted Patent B2
US 10,866,912 · App. 15/456,138 · Granted Dec 15, 2020

Integrated heterogeneous solid state storage drive

Inventors: Mark Hayashida (San Ramon, CA); Yaron Klein (Raanana, IL)
Assignee: Toshiba Memory Corporation
G06F13/1673G06F3/0604G06F3/0631G06F3/0688G06F13/4282
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Quick Facts
Patent No.
US 10,866,912
App. No.
15/456,138
Granted
Dec 15, 2020
Kind
B2
Abstract

In one embodiment, a heterogeneous integrated solid state drive includes a plurality of solid state memory devices including at least one solid state memory device of a first type and at least one solid state memory device of a second type, a controller coupled to each of the plurality of solid state memory devices and an interface coupled to the controller. The controller is configured to receive at least one user-defined memory parameter and to create at least one namespace satisfying the at least one user-defined memory parameter in at least one of the plurality of solid state memory devices. In one embodiment, the at least one user-defined memory parameter is one of a group consisting of a capacity, a quality of service level, an assured number of I/O operations per second, a bandwidth, a latency, and an endurance.

Claims (29)

1. A heterogeneous integrated solid state drive comprising:

a plurality of solid state memory devices disposed in the heterogeneous integrated solid state drive, the plurality of solid state memory devices comprising at least one solid state memory device of a first type and at least one solid state memory device of a second type different from the first type;

a controller disposed in the heterogeneous integrated solid state drive, the controller coupled to each of the plurality of solid state memory devices; and

an interface disposed in the heterogeneous integrated solid state drive, the interface coupled to the controller, the interface configured to communicate with a device external to the heterogeneous integrated solid state drive,

wherein

the controller is configured to:

receive at least one user-defined memory parameter, the user-defined memory parameter being user-selected from at least one controller-defined parameter in a plurality of controller-defined parameters,

create at least one namespace satisfying the at least one user-defined memory parameter in at least one of the plurality of solid state memory devices, and

create a first namespace in the at least one namespace corresponding to a first set of memory addresses in the at least one solid state memory device of the first type and a second set of memory addresses in the at least one solid state memory device of the second type, and

the at least one solid state memory device of a first type is a NAND memory device and the at least one solid state memory device of a second type is a NVRAM device.

2. The heterogeneous integrated solid state drive of claim 1 , wherein the interface is an Ethernet network interface card or a PCIe bus interface.

3. The heterogeneous integrated solid state drive of claim 1 , wherein the interface is configured to communicate using a NVMe over Fabric protocol.

4. The heterogeneous integrated solid state drive of claim 1 , wherein the at least one solid state memory device of a first type is a NAND memory device of a first type and the at least one solid state memory device of a second type is a NAND memory device of a second type different from the first type.

5. The heterogeneous integrated solid state drive of claim 1 , wherein the at least one solid state memory device of the first type is a NVRAM device and controller is configured to utilize the first set of memory addresses in the at least one solid state memory device of the first type as a write buffer.

6. The heterogeneous integrated solid state drive of claim 1 , wherein the at least one user-defined memory parameter is one of a group consisting of a capacity, a quality of service level, an assured number of I/O operations per second, a bandwidth, a latency, and an endurance.

7. The heterogeneous integrated solid state drive of claim 1 , wherein the at least one user-defined memory parameter is a quality of service level.

8. The heterogeneous integrated solid state drive of claim 7 , wherein the controller is further configured to autonomously move data within the at least one namespace to implement a quality of service level.

9. A method comprising:

determining at least one property of at least one solid state memory device of a first type coupled to a controller, wherein the controller and at least one solid state memory device are disposed in a heterogeneous integrated solid state device;

determining at least one property of at least one solid state memory device of a second type different from the first type coupled to the controller, wherein the at least one solid state memory device of the second type are disposed in the heterogeneous integrated solid state drive;

receiving at least one user-defined memory parameter, wherein the user-defined memory parameter is user-selected from at least one controller-defined parameter in a plurality of controller-defined parameters;

creating at least one namespace satisfying the at least one user-defined memory parameter in at least one of the plurality of solid state memory devices coupled to the controller, and

creating a first namespace in the at least one namespace corresponding to a first set of memory addresses in the at least one solid state memory device of the first type and a second set of memory addresses in the at least one solid state memory device of the second type,

wherein the at least one solid state memory device of a first type is a NAND memory device and the at least one solid state memory device of a second type is a NVRAM memory device.

10. The method of claim 9 , wherein the at least one solid state memory device of a first type is a NAND memory device of a first type and the at least one solid state memory device of a second type is a NAND memory device of a second type different from the first type.

11. The method of claim 9 , wherein the at least one solid state memory device of the first type is a NVRAM device and creating the namespace includes defining the first set of memory addresses in the at least one solid state memory device of the first type as a write buffer.

12. The method of claim 9 , wherein the at least one user-defined memory parameter is one of a group consisting of a capacity, a quality of service level, an assured number of I/O operations per second, a bandwidth, a latency, and an endurance.

13. The method of claim 9 , wherein the at least one user-defined memory parameter is a quality of service level.

14. The method of claim 13 , further comprising the controller autonomously moving data within the at least one namespace to implement a quality of service level.

Assignments (4)
CHANGE OF NAME AND ADDRESS Recorded Feb 4, 2022
From: K.K PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058957/0124 →
CHANGE OF NAME AND ADDRESS Recorded Jan 31, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058905/0582 →
MERGER Recorded Jan 31, 2022
From: TOSHIBA MEMORY CORPORATION
To: K.K PANGEA
Reel/Frame 058946/0675 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 1, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043397/0380 →
Continuity (1)
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