Methods for depositing films with organoaminodisilane precursors
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R 1 is selected from linear or branched C 3 to C 10 alkyl group, linear or branched C 3 to C 10 alkenyl group, linear or branched C 3 to C 10 alkynyl group, C 1 to C 6 dialkylamino group, electron withdrawing group, and C 6 to C 10 aryl group; R 2 is selected from hydrogen, linear or branched C 1 to C 10 alkyl group, linear or branched C 3 to C 6 alkenyl group, linear or branched C 3 to C 6 alkynyl group, C 1 to C 6 dialkylamino group, C 6 to C 10 aryl group, linear or branched C 1 to C 6 fluorinated alkyl group, electron withdrawing group, and C 4 to C 10 aryl group; optionally wherein R 1 and R 2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
1. An organoaminodisilane precursor for making a silicon containing film comprising greater than 99.5% by weight pure di-iso-propylaminodisilane wherein the precursor is substantially free of amines and halides.
2. The precursor of claim 1 further comprising at least one solvent wherein the solvent does not react with di-iso-propylaminodisilane, has a boiling point and wherein the difference between the boiling point of the solvent and that of the at least one organoaminodisilane is 40° C. or less.
3. The precursor of claim 1 further comprising at least one solvent selected from the group consisting of ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, tertiary aminoether.
4. The precursor of claim 1 further comprising at least one purge gas.
5. The precursor of claim 4 wherein the purge gas comprises at least one member selected from the group consisting of argon, nitrogen, helium, neon and hydrogen.
6. The precursor of claim 1 further comprising at least one oxygen source.
7. The precursor of claim 6 wherein the oxygen source comprises at least one member selected from the group consisting of water, oxygen plasma, ozone, carbon monoxide, and carbon dioxide.
8. The precursor of claim 1 further comprising at least one nitrogen source.
9. The precursor of claim 8 wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, and mixtures thereof.
10. The precursor of claim 1 further comprising at least one reducing agent source.
11. The precursor of claim 10 wherein the reducing agent is at least one selected from the group consisting of hydrogen, hydrogen plasma, or hydrogen chloride.
12. The precursor of claim 1 wherein di-iso-propylaminodisilane is a liquid.
13. The precursor of claim 1 wherein the precursor comprises less than 0.5% by weight bis-disilane.
14. The precursor of claim 13 wherein the bis-disilane comprises bis(di-iso-propylamino)disilane bis(di-iso-propylamino)disilane.
15. The precursor of claim 1 further comprising at least one solvent selected from the group consisting of octane, ethylcyclohexane, and toluene.
16. A composition comprising greater than 99.5% by weight pure di-iso-propylaminodisilane wherein the di-iso-propylaminodisilane is made by a process comprising reacting disilane with diisopropylamine in the presence of a catalyst.