Light-emitting device
A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; an electrode comprising a surface next to the semiconductor system; a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth position in the electrode, and the contact material is selected from the group consisting of Be, Se, Sn, Zn, and combinations thereof; and a base material different from the base material and in the electrode.
1. A light-emitting device, comprising:
a semiconductor system comprising a light-emitting semiconductor stack;
an electrode comprising a surface next to the semiconductor system;
a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth position in the electrode, and the contact material is selected from the group consisting of Be, Se, Sn, Zn, and combinations thereof; and
a base material different from the contact material and in the electrode,
wherein the base material is in the semiconductor system.
2. The light-emitting device according to claim 1 , wherein a distance between the first depth position and the surface is not less than 500 nm.
3. The light-emitting device according to claim 1 , wherein the electrode is devoid of Ti or/and Cr.
4. The light-emitting device according to claim 1 , wherein the base material comprises metal.
5. The light-emitting device according to claim 4 , wherein the base material comprises Au.
6. The light-emitting device according to claim 1 , wherein the semiconductor system comprises a window layer on the light-emitting semiconductor stack.
7. The light-emitting device according to claim 6 , wherein the window layer comprises GaN or AlGaInP.
8. The light-emitting device according to claim 6 , wherein the base material and the contact material are in the window layer.
9. The light-emitting device according to claim 1 , wherein the electrode comprises a contact layer, and wherein the first depth position is in the contact layer.
10. The light-emitting device according to claim 9 , wherein the electrode further comprises a barrier layer on the contact layer and the first depth position is in the barrier layer.
11. The light-emitting device according to claim 10 , wherein the barrier layer comprises Zn, W, Ni or Pt.
12. The light-emitting device according to claim 10 , wherein the barrier layer has a thickness between 30 nm and 100 nm both inclusive.
13. The light-emitting device according to claim 9 , wherein the contact layer comprises a first layer and a second layer, and the first layer is between the second layer and the semiconductor system.
14. The light-emitting device according to claim 13 , wherein the second layer has a thickness larger than a thickness of the first layer.
15. The light-emitting device according to claim 13 , wherein the first layer has a thickness between 100 nm and 300 nm both inclusive, and wherein the second layer has a thickness between 500 nm and 1500 nm both inclusive.
16. A light-emitting device, comprising:
a semiconductor system comprising a light-emitting semiconductor stack;
an electrode comprising a surface next to the semiconductor system;
a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth position in the electrode, and the contact material has a reactivity higher than that of Pt; and
a base material different from the contact material and in the electrode,
wherein the base material is in the semiconductor system.
17. The light-emitting device according to claim 16 , wherein the electrode is devoid of Ti or/and Cr.
18. The light-emitting device according to claim 16 , wherein the base material comprises metal.
19. The light-emitting device according to claim 16 , wherein the electrode comprises a contact layer, the first depth position is in the contact layer, the contact layer comprises a first layer and a second layer, the first layer is between the second layer and the semiconductor system, and the second layer has a thickness larger than a thickness of the first layer.