Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device, includes: loading a substrate including a laminated film including an insulating film and a sacrificial film, a channel hole formed in the laminated film, a charge trapping film formed on a surface in the channel hole, a first channel film formed on a surface of the charge trapping film, and a common source line exposed on the bottom of the channel hole; receiving information on a distribution of hole diameter of the channel hole; and forming a second channel film on a surface of the first channel film by supplying a first processing gas and a second processing gas to a center side and an outer peripheral side of the substrate, respectively, so as to correct the distribution of the hole diameter based on the information.
1. A method of manufacturing a semiconductor device, comprising:
forming a plurality of first channel holes in a laminated film including an insulating film and a sacrificial film on a substrate;
forming a charge trapping film in each of the plurality of first channel holes and a first channel film on a surface of the charge trapping film in each of the plurality of first channel holes, thereby forming a plurality of second channel holes;
receiving information on a distribution of hole diameters of the plurality of second channel holes; and
forming a second channel film on a surface of the first channel film by supplying a first processing gas and a second processing gas different from the first processing gas to a center side and an outer peripheral side of the substrate, respectively, based on the received information, so as to create a substantively uniform distribution of the total thickness of the first channel film and the second channel film across the substrate of the semiconductor device.
2. The method of claim 1 , wherein the act of forming the second channel film on the surface of the first channel film is performed such that an in-plane distribution of the sum of a side wall thickness of the second channel film and a side wall thickness of the first channel film falls within a predetermined range.
3. The method of claim 2 , wherein before the charge trapping film and the first channel film are formed, the method further comprises:
acquiring data of an in-plane distribution of hole diameters of the plurality of first channel holes; and
forming a protective film on a surface of each of the plurality of first, channel holes based on the acquired data, so as to correct the in-plane distribution of the hole diameters of the plurality of first channel holes.
4. The method of claim 3 , wherein the act of forming the second channel film on the surface of the first channel film includes using a first silicon-containing gas and a second silicon-containing gas and setting amounts of the first silicon-containing gas and the second silicon-containing gas supplied to the center side of the substrate to be different from amounts of the first silicon-containing gas and the second silicon-containing gas supplied to the outer peripheral side of the substrate.
5. The method of claim 2 , wherein the act of forming the second channel film on the surface of the first channel film includes using a first silicon-containing gas and a second silicon-containing gas and setting amounts of the first silicon-containing gas and the second silicon-containing gas supplied to the center side of the substrate to be different from amounts of the first silicon-containing gas and the second silicon-containing gas supplied to the outer peripheral side of the substrate.
6. The method of claim 1 , wherein before the charge trapping film and the first channel film are formed, the method further comprises:
acquiring data of an in-plane distribution of hole diameters of the plurality of first channel holes; and
forming a protective film on a surface of each of the plurality of first channel holes based on the acquired data, so as to correct the in-plane distribution of the hole diameters of the plurality of first channel holes.
7. The method of claim 6 , wherein the act of forming the second channel film on the surface of the first channel film includes using a first silicon-containing gas and a second silicon-containing gas and setting amounts of the first silicon-containing gas and the second silicon-containing gas supplied to the center side of the substrate to be different from amounts of the first silicon-containing gas and the second silicon-containing gas supplied to the outer peripheral side of the substrate.
8. The method of claim 1 , wherein the act of forming the second channel film on the surface of the first channel film includes using a first silicon-containing gas and a second silicon-containing gas and setting amounts of the first silicon-containing gas and the second silicon-containing gas supplied to the center side of the substrate to be different from amounts of the first silicon-containing gas and the second silicon-containing gas supplied to the outer peripheral side of the substrate.