Method of manufacturing semiconductor device
A process of forming a first mask on a first region of a metal film formed on a surface of a substrate, a process of modulating a work function of a first exposed region of the metal film, using plasma of a first process gas, a process of removing the first mask, a process of forming a second mask on a second region of the metal film, and a process of modulating the work function of a second exposed region of the metal film, using plasma of a second process gas are executed.
1. A method of manufacturing a semiconductor device comprising, wherein (a) to (e) are sequentially performed in the following order:
(a) forming a first mask on a first region of a metal film formed on a surface of a substrate;
(b) modulating a work function of a first exposed region of the metal film, using plasma of a first process gas;
(c) removing the first mask;
(d) forming a second mask on a second region of the metal film; and
(e) modulating a work function of a second exposed region of the metal film, using plasma of a second process gas,
wherein, in modulating the work function of the first exposed region, the work function is decreased by removing nitrogen from the first exposed region of the metal film, and
wherein the act of removing nitrogen comprises oxidizing the first exposed region of the metal film, using plasma of an oxygen-containing gas, and reducing the oxidized first exposed region of the metal film, using plasma of a hydrogen-containing gas.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein
the first region and the second region are different regions from each other.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein
the second region is a region, at least a part of the region being different from the first region.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein
the metal film comprises titanium nitride film.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein
the metal film of the first region is configured as a gate electrode of a P-type MOS, and the metal film of the second region is configured as a gate electrode of an N-type MOS.
6. The method of manufacturing a semiconductor device according to claim 1 , wherein (f) to (h) are further sequentially performed in the following order:
(f) removing the second mask;
(g) forming a third mask on a third region of the metal film; and
(h) modulating a work function of a third exposed region of the metal film, using plasma of a third process gas.
7. A method of manufacturing a semiconductor device comprising sequentially performing the following steps:
(a) providing a processing chamber with a substrate having a metal film formed on a surface, and having a first mask formed on a first region of the surface of the metal film;
(b) modulating a work function of a first exposed region of the metal film, the first exposed region being exposed to a space in the processing chamber, using plasma of an oxygen-containing gas and plasma of a hydrogen-containing gas;
(c) providing the processing chamber with the substrate from which the first mask is removed, and having a second mask formed on a second region of the surface of the metal film; and
(d) modulating a work function of a second exposed region of the metal film, the second exposed region being exposed to the space in the processing chamber, using plasma of a process gas,
wherein, in modulating the work function of the first exposed region, the work function is decreased by removing nitrogen from the first exposed region of the metal film, and
wherein the act of removing nitrogen comprises oxidizing the first exposed region of the metal film, using plasma of the oxygen-containing gas, and reducing the oxidized first exposed region of the metal film, using plasma of the hydrogen-containing gas.
8. A method of manufacturing a semiconductor device comprising sequentially performing the following steps:
(a) loading a substrate into a processing chamber, the substrate having a metal film formed on a surface, and having a first mask formed on a first region of the surface of the metal film;
(b) modulating a work function of a first exposed region of the metal film by exciting an oxygen-containing gas and plasma of a hydrogen-containing gas in the processing chamber into plasma, the first exposed region being exposed to a space in the processing chamber;
(c) unloading the substrate from the processing chamber;
(d) loading the substrate into the processing chamber, the substrate from which the first mask is removed, and having a second mask formed on a second region of the surface of the metal film; and
(e) modulating a work function of a second exposed region of the metal film by exciting a process gas in the processing chamber into plasma, the second exposed region being exposed to the space in the processing chamber,
wherein, in modulating the work function of the first exposed region, the work function is decreased by removing nitrogen from the first exposed region of the metal film, and
wherein the act of removing nitrogen comprises oxidizing the first exposed region of the metal film, using plasma of the oxygen-containing gas, and reducing the oxidized first exposed region of the metal film, using plasma of the hydrogen-containing gas.