Side inject nozzle design for processing chamber
Implementations of the present disclosure provide apparatus and method for improving gas distribution during thermal processing. One implementation of the present disclosure provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support has a substrate supporting surface, a gas source assembly coupled to an inlet of the chamber body, an exhaust assembly coupled to an outlet of the chamber body, and a side gas assembly coupled to a sidewall of the chamber body, wherein the side gas assembly comprises a gas inlet pointed in a direction that is tangential to the edge of the substrate supporting surface, and wherein the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are angularly offset at about 90° with respect to each other, and the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are intersected by a common plane.
1. An apparatus, comprising:
a chamber body comprising a gas inlet disposed on a first side of the chamber body, a gas outlet disposed on a second side of the chamber body, the second side being opposite to the first side;
a substrate support disposed within the chamber body, wherein the substrate support has a substrate support surface;
an exhaust assembly coupled to the gas outlet of the chamber body; and
a side gas assembly disposed on a third side of the chamber body, the third side being located between the first side and the second side, wherein the side gas assembly comprises a gas channel angled and extended along a direction towards the gas outlet of the chamber body, and the gas channel is operable to provide a gas flow in a direction tangential to, or proximate an edge of the substrate supporting surface, wherein the gas inlet is in fluid communication with a first gas source, a second gas source, and a third gas source, the first gas source and the second gas source are different in chemical composition, and the third gas source is a remote plasma source.
2. The apparatus of claim 1 , wherein the substrate support is operable to rotate along a clockwise or counter clockwise direction.
3. An apparatus for processing a substrate, comprising:
a chamber body defining a processing volume therein;
a substrate support disposed in the processing volume, wherein the substrate support has a substrate support surface;
a gas source assembly in fluid communication with an inlet of the chamber body, wherein the gas source assembly is in fluid communication with a first gas source and a second gas source, and the first gas source and the second gas source are different in chemical composition;
an exhaust assembly in fluid communication with an outlet of the chamber body, and
a side gas assembly coupled to a sidewall of the chamber body, wherein the sidewall is on a side different from the inlet and the outlet of the chamber body, and the side gas assembly comprises a gas channel that is angled and extended along a direction towards the outlet of the chamber body, and wherein the inlet of the chamber body and the outlet of the chamber body are intersected by a common plane.
4. The apparatus of claim 3 , wherein the side gas assembly is in fluid communication with a third gas source that is different from the first gas source in chemical composition.
5. The apparatus of claim 4 , wherein the first gas source comprises an oxygen containing gas, and each of the second and third gas sources comprises a hydrogen containing gas.
6. The apparatus of claim 5 , wherein the hydrogen containing gas is hydrogen radicals.
7. The apparatus of claim 3 , wherein the side gas assembly is in fluid communication with a third gas source, the third gas source comprises an oxygen containing gas or a gas mixture of a hydrogen containing gas and an oxygen containing gas.
8. The apparatus of claim 3 , wherein the side gas assembly is operable to provide, from the gas channel, a gas flow along a flow path that is at a distance of about 5 mm to about 10 mm from a tangent line of the substrate supporting surface, and the tangent line is parallel to the flow path.