Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices
A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further include introducing precursors that include at least one dielectric providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool. The hydrogen precursor gas is introduced to the deposition chamber at a flow rate ranging from 50 sccm to 5000 sccm. The molar ratio for Hydrogen/Silicon gas precursor can be equal or greater than 0.05.
1. A dielectric film comprising:
silicon in an amount ranging from 25 at. % to 35 at. %;
carbon in an amount ranging from 15 at. % to 25 at. %;
nitrogen in an amount ranging from 10 at. % to 25 at. %; and
hydrogen in an amount of 30 at. % or less, wherein the dielectric film when treated with an ultraviolet curing process for a temperature ranging from 350° C. to 400° C. for a time period ranging from 500 seconds to 600 seconds has a shrinkage that is less than 4.5%.
2. The dielectric film of claim 1 , wherein dielectric film is a layer within a spacer.
3. The dielectric film of claim 1 , wherein the dielectric film is layer within a cap structure.
4. The dielectric film of claim 1 , wherein the dielectric film is a layer within an oxidation barrier.
5. The dielectric film of claim 1 , wherein the dielectric film is a layer within a passivation barrier.
6. The dielectric film of claim 1 , wherein the dielectric film is a layer within an etch stop layer in an electrical device.
7. The dielectric film of claim 1 , wherein a thickness of the dielectric film is less than 20 nm.
8. The dielectric film of claim 1 , wherein a N/Si ratio ranges from 0.7 to 0.8.
9. The dielectric film of claim 1 , wherein a C/Si ratio ranges from 0.6 to 0.7.
10. The dielectric film of claim 1 , wherein a H/Si ratio ranges from 0.9 to 1.1.
11. The dielectric film of claim 1 , wherein a H/N ratio ranges from 1.3 to 1.4.
12. The dielectric film of claim 1 , wherein a H/C ratio ranges from 1.4 to 1.5.
13. A dielectric film comprising:
silicon in an amount ranging from 25 at. % to 35 at. %;
carbon in an amount ranging from 15 at. % to 25 at. %;
nitrogen in an amount ranging from 10 at. % to 25 at. %; and
hydrogen in an amount from 20 at. % to 30 at. %, wherein the dielectric film when treated with an ultraviolet curing process for a temperature ranging from 350° C. to 400° C. for a time period ranging from 500 seconds to 600 seconds has a shrinkage that is less than 4.5%.
14. The dielectric film of claim 13 , wherein dielectric film is a layer within a spacer, cap structure, liner layer, oxidation barrier, passivation barrier, or etch stop layer in an electrical device.
15. The dielectric film of claim 13 , wherein a N/Si ratio ranges from 0.7 to 0.8.
16. The dielectric film of claim 13 , wherein a C/Si ratio ranges from 0.6 to 0.7.
17. The dielectric film of claim 13 , wherein a H/Si ratio ranges from 0.9 to 1.1.
18. The dielectric film of claim 13 , wherein a H/N ratio ranges from 1.3 to 1.4.
19. The dielectric film of claim 13 , wherein a H/C ratio ranges from 1.4 to 1.5.
20. The dielectric film of claim 13 , wherein a thickness of the dielectric film is less than 20 nm.